Search Results - "O'Brien, R.R."
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A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices
Published in IEEE electron device letters (01-04-1981)“…We studied the transient characteristics of charge collection from alpha-particle tracks in silicon devices. We have run computer calculations using the finite…”
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Collection of charge from alpha-particle tracks in silicon devices
Published in IEEE transactions on electron devices (01-06-1983)“…Experimentally and by computer simulation, we have investigated the collection process of alpha-particle-generated charge in silicon devices. We studied the…”
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F-15 Readiness - The Maintainability Contribution
Published in Annual Reliability and Maintainability Symposium, 1984. Proceedings (1984)“…The F-15 Eagle is a blend of maintainability and capability that enjoys a high level of readiness. This paper addresses the F-15 Full Mission Capable (FMC)…”
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Comments on "Two-dimensional numerical analysis of impurity atom diffusion in semiconductors"
Published in IEEE transactions on electron devices (01-07-1984)Get full text
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A new approach to the simulation of the coupled point defects and impurity diffusion
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01-10-1990)“…A program, named FINDPRO, has been developed which efficiently solves the coupled diffusion of point defects and multiple impurity species in two dimensions,…”
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Two-dimensional finite element modeling of NPN devices
Published in 1976 International Electron Devices Meeting (1976)“…Our program for semiconductor analysis by finite elements has previously been applied to the analysis of IGFET devices. In this paper we describe the…”
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Conference Proceeding -
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Avalanche breakdown characteristics of a diffused P-N junction
Published in I.R.E. transactions on electron devices (01-11-1962)“…A one-dimensional analysis is presented on the avalanche breakdown characteristics of a diffused p-n junction diode. By numerically integrating the carrier…”
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On the charge neutral electric field in a semiconductor of homogeneous conductivity type
Published in Proceedings of the IEEE (01-01-1969)“…An assumption of charge neutrality is frequently used to calculate the electric field arising from an impurity atom density gradient in semiconductor material…”
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