Search Results - "Nummila, K. K."

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  1. 1

    Photosensitive chipless radio-frequency tag for low-cost monitoring of light-sensitive goods by Oliveros, M., Carminati, M., Zanutta, A., Mattila, T., Jussila, S., Nummila, K., Bianco, A., Lanzani, G., Caironi, M.

    Published in Sensors and actuators. B, Chemical (01-02-2016)
    “…•We present a novel chipless RF tag endowed with light-sensitive capability.•The tag comprises a commercial high-frequency antenna and a light sensor.•Light…”
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    Journal Article
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    Applicability of Metallic Nanoparticle Inks in RFID Applications by Allen, M.L., Jaakkola, K., Nummila, K., Seppa, H.

    “…Radio frequency identification (RFID) antennas for HF and UHF frequencies are ink-jet printed using commercially available silver nanoparticle ink. Quality…”
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    Journal Article
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    Observation of nuclear ferromagnetic ordering in silver at negative nanokelvin temperatures by HAKONEN, P. J, NUMMILA, K. K, VUORINEN, R. T, LOUNASMAA, O. V

    Published in Physical review letters (20-01-1992)
    “…The ferromagnetically ordered state in the nuclear spin system of Ag has been reached at negative absolute temperatures by adiabatic nuclear demagnetization at…”
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    Journal Article
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    Polarized nuclei in normal and superconducting rhodium by KNUUTTILA, T. A, TUORINIEMI, J. T, LEFMANN, K, JUNTUNEN, K. I, RASMUSSEN, F. B, NUMMILA, K. K

    Published in Journal of low temperature physics (01-04-2001)
    “…We performed SQUID-NMR measurements on a rhodium single crystal at ultra-low nuclear-spin temperatures. With initial polarizations up to p = 0.95, the…”
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    Journal Article
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    Effect of heat treatment of pure and carbon-polluted rhodium samples on the low-temperature resistivity by LEFMANN, K, KNUUTTILA, T. A, MARTIKAINEN, J. E, KUHN, L. T, NUMMILA, K. K

    Published in Journal of materials science (01-02-2001)
    “…We present a systematic investigation of conditions for heat treatment of Rh with the aim of increasing the residual resistivity ratio (RRR). The maximal value…”
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    Journal Article
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    An integrated 900-MHz push-pull power amplifier for mobile applications by Matilainen, M.J., Nummila, K.L.I., Jarvinen, E.A., Kalajo, S.J.K.

    “…This paper describes a two-stage 900-MHz push-pull type GaAs HBT MMIC power amplifier with 3.2W (35dBm) maximum output power and 57% maximum power added…”
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    Conference Proceeding Journal Article
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    A MODFET-based optoelectronic integrated circuit receiver for optical interconnects by Ketterson, A.A., Seo, J.-W., Tong, M.H., Nummila, K.L., Morikuni, J.J., Cheng, K.-Y., Kang, S.-M., Adesida, I.

    Published in IEEE transactions on electron devices (01-08-1993)
    “…The design, fabrication, and characterization of a 0.85- mu m sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is…”
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    Journal Article
  9. 9

    InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess by Tong, M., Nummila, K., Ketterson, A., Adesida, I., Caneau, C., Bhat, R.

    Published in IEEE electron device letters (01-10-1992)
    “…Excellent uniformity in the threshold voltage, transconductance, and current-gain cutoff frequency of InAlAs/InGaAs/InP MODFETs has been achieved using a…”
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    Journal Article
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    Double-spin-flip resonance of rhodium nuclei at positive and negative spin temperatures by Tuoriniemi, JT, Knuuttila, TA, Lefmann, K, Nummila, KK, Yao, W, Rasmussen, FB

    Published in Physical review letters (10-01-2000)
    “…Sensitive SQUID-NMR measurements were used to study the mutual interactions in the highly polarized nuclear-spin system of rhodium metal. The dipolar coupling…”
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    Journal Article
  12. 12

    Neutron studies of nuclear magnetism at ultralow temperature by Siemensmeyer, K, Clausen, K.N, Lefmann, K, Lounasmaa, O.V, Metz, A, Nummila, K.K, Rasmussen, F.B, Steiner, M, Tuoriniemi, J.T, Vuorinen, R.T

    Published in Physica. B, Condensed matter (01-12-1997)
    “…Nuclear magnetic order in copper and silver has been investigated by neutron diffraction. Antiferromagnetic order is observed in these simple, diamagnetic…”
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    Journal Article
  13. 13

    Delay time analysis for short gate-length GaAs MESFETs by Nummila, K., Ketterson, A.A., Adesida, I.

    Published in Solid-state electronics (01-02-1995)
    “…GaAs MESFETs with gate lengths from 55 to 150 nm have been fabricated and characterized. By using selective etching for the gate recess, the channel thickness…”
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    Journal Article
  14. 14

    InAlAs/InGaAs heterostructure FET's processed with selective reactive-ion-etching gate-recess technology by Agarwala, S., Nummila, K., Adesida, I., Caneau, C., Bhat, R.

    Published in IEEE electron device letters (01-09-1993)
    “…A highly selective reactive-ion-etching process based on HBr plasma has been used as a gate-recess technique in fabrication of InAlAs/InGaAs heterostructure…”
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    Journal Article
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    Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers by AGARWALA, S, TONG, M, BALLEGEER, D. G, NUMMILA, K, KETTERSON, A. A, ADESIDA, I

    Published in Journal of electronic materials (01-04-1993)
    “…The delta -doped structures showed a smaller change in sheet carrier density and mobility compared to conventionally doped structures. Slight change in…”
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    Journal Article
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    Direct measurements of electron thermalization in Coulomb blockade nanothermometers at millikelvin temperatures by Knuuttila, T.A., Nummila, K.K., Yao, W., Kauppinen, J.P., Pekola, J.P.

    “…We investigate electron thermalization of tunnel junction arrays installed in a powerful dilution refrigerator whose mixing chamber can produce lattice…”
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    Journal Article
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    OMVPE-grown InAlAs/InGaAs/InP MODFET's with performance comparable to those grown by MBE by Tong, M., Nummila, K., Ketterson, A., Adesida, I., Aina, L., Mattingly, M.

    Published in IEEE transactions on electron devices (01-10-1992)
    “…The current-gain cutoff frequency (f/sub T/) performances of InAlAs/InGaAs/InP MODFETs on OMVPE-grown heterostructures and MBE-grown heterostructures are…”
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    Journal Article
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    A 10-GHz bandwidth pseudomorphic GaAs/InGaAs/AlGaAs MODFET-based OEIC receiver by Ketterson, A., Seo, J.-W., Tong, M., Nummila, K., Ballegeer, D., Kang, S.-M., Cheng, K.Y., Adesida, I.

    Published in IEEE transactions on electron devices (01-11-1992)
    “…Summary form only given. High-performance quarter-micrometer pseudomorphic modulation-doped field-effect transistors (MODFETs) and a metal-semiconductor-metal…”
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    Journal Article