Search Results - "Nsofor, Ugochukwu"

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  1. 1

    Correlation between in Situ Diagnostics of the Hydrogen Plasma and the Interface Passivation Quality of Hydrogen Plasma Post-Treated a‑Si:H in Silicon Heterojunction Solar Cells by Soman, Anishkumar, Nsofor, Ugochukwu, Das, Ujjwal, Gu, Tingyi, Hegedus, Steven

    Published in ACS applied materials & interfaces (01-05-2019)
    “…Passivation of the interface defect states is crucial to mitigate the recombination losses in silicon solar cells. In this work, we have investigated the role…”
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    Journal Article
  2. 2

    a-Si:H/c-Si interface hydrogenation for implied Voc = 755 mV in Silicon heterojunction solar cell by Soman, Anishkumar, Nsofor, Ugochukwu, Das, Ujjwal, Gu, Tingyi, Hegedus, Steve

    “…The amorphous (a-Si:H) and crystalline silicon (c-Si) interface plays a pivotal role in determining the V oc of the silicon heterojunction solar cell…”
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    Conference Proceeding
  3. 3

    Passive Tuning of Optical Couplers Using a Thin-Film Cladding Material by Nsofor, Ugochukwu J., Yao, Peng L., Shouyuan Shi, Prather, Dennis W.

    Published in IEEE photonics technology letters (01-05-2017)
    “…This letter reports the demonstration of a novel method to passively tune the splitting ratio of a Ti-indiffused lithium niobate (LiNbO 3 ) 3-dB directional…”
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    Journal Article
  4. 4

    Hydrogen Plasma Post-Deposition Treatment for Passivation of a-Si/c-Si Interface for Heterojunction Solar Cell by Correlating Optical Emission Spectroscopy and Minority Carrier Lifetime by Soman, Anishkumar, Nsofor, Ugochukwu, Lei Zhang, Das, Ujjwal, Tingyi Gu, Hegedus, Steve

    “…Excellent passivation at the a-Si:H/ c-Si interface is required for high efficiency heterojunction solar cells. Hydrogen plasma treatment after the a-Si…”
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    Conference Proceeding
  5. 5

    Direct Laser Patterned Electroplated Copper Contacts for Interdigitated Back Contact Silicon Solar Cells by Dobson, Kevin D., Sun, Zeming, Nsofor, Ugochukwu, Das, Ujjwal, Sinha, Arpan, Gupta, Mool, Hegedus, Steven S.

    “…Laser patterning of seed layers for Cu electroplated interdigitated contacts on Ni/a-SiN x :H/Si substrates is presented. Damage was controlled by varying the…”
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    Conference Proceeding
  6. 6

    Improving the Interface Passivation of Si HJ Solar Cells by Interrupted Deposition of Thin a-Si:H Film by Nsofor, Ugochukwu J., Soman, Anishkumar, Das, Ujjwal, Hegedus, Steve

    “…In this paper, the effects of interrupted deposition of intrinsic hydrogenated amorphous silicon (i.a-Si:H) on the Si surface passivation are studied…”
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    Conference Proceeding
  7. 7

    Effect of dielectric layers on laser-fired-contact performance in a-Si/cSi heterojunction Solar Cells by Das, Ujjwal, Thompson, Christopher, Nsofor, Ugochukwu, Sun, Zeming, Gupta, Mool C., Hegedus, Steven

    “…Laser fired contacts (LFC) through two types of passivating stacks, amorphous silicon nitride (a-SiN_{{\mathrm {X}}}:H) and ntype amorphous silicon (n.a-Si),…”
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    Conference Proceeding
  8. 8

    Direct Laser Isolation For Interdigitated Back Contact Heterojunction Solar Cells by Sun, Zeming, Nsofor, Ugochukwu, Ahmed, Nuha, Das, Ujjwal K., Hegedus, Steven, Gupta, Mool C.

    “…To achieve high-efficiency and low-cost c-Si solar cells, laser-based isolation and patterning of interdigitated back contact heterojunction (IBC-HJ) solar…”
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    Conference Proceeding
  9. 9

    Passive tuning of optical couplers using a thin-film cladding material by Nsofor, Ugochukwu J., Yao, Peng L., Shouyuan Shi, Prather, Dennis W.

    Published in 2017 IEEE Photonics Conference (IPC) (01-10-2017)
    “…This letter reports the demonstration of a novel method to passively tune the splitting ratio of a Ti-indiffused lithium niobate (LiNbO 3 ) 3-dB directional…”
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    Conference Proceeding
  10. 10

    Hydrogen plasma treatment of MoS2 with graphene protection by Soman, Anishkumar, Burke, Robert A., Li, Qui, Valentin, Michael, Zakar, Eugene, Nsofor, Ugochukwu, Hegedus, Steven, Das, Ujjwal K., Shi, Jianping, Zhang, Yanfeng, Gu, Tingyi

    “…Hydrogen plasma treatment can create defects such as sulfur vacancies in single layer MoS 2 . A single layer graphene's protection can effectively reduce the…”
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    Conference Proceeding