Search Results - "Nozaki, Shinichiro"

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  1. 1

    High-power and high-temperature operation of an InGaN laser over 3 W at 85 °C using a novel double-heat-flow packaging technology by Nozaki, Shinichiro, Yoshida, Shinji, Yamanaka, Kazuhiko, Imafuji, Osamu, Takigawa, Shinichi, Katayama, Takuma, Tanaka, Tsuyoshi

    Published in Japanese Journal of Applied Physics (01-04-2016)
    “…In this paper, we present a novel double-heat-flow (DHF) packaging technology of an indium gallium nitride (InGaN) laser diode (LD) promising for high-power…”
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    Journal Article
  2. 2

    Characterization of ferroelectric/metal interface under the repeated polarization switching by Nozaki, Shinichiro, Ishida, Kenji, Matsumoto, Arifumi, Horie, Satoshi, Kuwajima, Shuichiro, Yamada, Hirofumi, Matsushige, Kazumi

    Published in Thin solid films (03-03-2008)
    “…Polarization fatigue mechanism in organic ferroelectrics, structures at interface between ferroelectric vinylidene fluoride oligomer and Al electrode under the…”
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    Journal Article Conference Proceeding
  3. 3

    High-Power InGaN Laser Array With Advanced Lateral-Corrugated Waveguides by Hagino, Hiroyuki, Kawaguchi, Masao, Nozaki, Shinichiro, Mochida, Atsunori, Kano, Takashi, Takigawa, Shinichi, Katayama, Takuma, Tanaka, Tsuyoshi

    Published in IEEE journal of quantum electronics (01-12-2021)
    “…Both high-beam-quality and high-power operation of InGaN laser array are realized by lateral-corrugated waveguides (LCWG) with reduced higher-order transverse…”
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    Journal Article
  4. 4

    A high brightness GaN laser array with lateral-corrugated waveguides by Hagino, Hiroyuki, Kawaguchi, Masao, Nozaki, Shinichiro, Mochida, Atsunori, Kano, Takashi, Yamaguchi, Hideo, Fukakusa, Masaharu, Takigawa, Shinichi, Koga, Toshihiro, Katayama, Takuma

    Published in IEEE photonics technology letters (01-08-2022)
    “…A high brightness GaN laser diode array with an output power of 78 W and an average lateral beam-quality factor of 3.5 for 38 emitters has been realized by the…”
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    Journal Article
  5. 5

    Record-breaking high-power InGaN-based laser-diodes using novel thick-waveguide structure by Kawaguchi, Masao, Imafuji, Osamu, Nozaki, Shinichiro, Hagino, Hiroyuki, Nakamura, Koshi, Takigawa, Shinichi, Katayama, Takuma, Tanaka, Tsuyoshi

    “…High-power operation over 7W in InGaN laser-diodes is achieved by an undoped thick-waveguide structure where an optical-loss is suppressed by reduced…”
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    Conference Proceeding
  6. 6

    High-power operation of beam-quality-improved InGaN lasers with lateral corrugated waveguides by Hagino, Hiroyuki, Kawaguchi, Masao, Nibu, Takahiro, Nozaki, Shinichiro, Mochida, Atsunori, Kano, Takashi, Takigawa, Shinichi, Katayama, Takuma, Tanaka, Tsuyoshi

    Published in 2020 IEEE Photonics Conference (IPC) (01-09-2020)
    “…Both high-beam-quality and high-power operation of InGaN laser diodes are realized by lateral corrugated waveguides with reduced higher-order transverse modes…”
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    Conference Proceeding
  7. 7

    High-power GaN diode lasers and their applications by Kawaguchi, Masao, Nozaki, Shinichiro, Morimoto, Kiyoshi, Takigawa, Shinichi, Katayama, Takuma, Tanaka, Tsuyoshi

    “…High-power over 7W is presented in a single-emitting GaN diode laser with optical-loss suppressed waveguide structure. Here, thick undoped optical waveguide…”
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    Conference Proceeding