Search Results - "Nowak, Edward J."

Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures by Razavieh, Ali, Zeitzoff, Peter, Nowak, Edward J.

“…Scaling trends of FinFET architecture, with focus on Front-End-of-Line (FEOL), and Middle-of-Line (MOL) device parameters, is systematically investigated. It…”
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Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs by Pandey, R K, Murali, K V R M, Furkay, S S, Oldiges, P J, Nowak, E J

“…The efficient and successful realization of low-power semiconductor devices demands, among other things, the ability to quantitatively model and minimize…”
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A Novel Technique for Probing the Vertical Component of FinFET Source Resistance by Wang, Peng, Yu, Mickey, Cave, Nigel, Nowak, Edward J.

“…We propose and demonstrate, with hardware, the first experimental technique to measure a vertical component of FinFET source resistance. Forward bias is…”
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Modeling and Characterization of Gate Leakage in High-K Metal Gate Technology-Based Embedded DRAM by Bajaj, Mohit, Pandey, Rajan K., De, Sandip, Sathaye, Ninad D., Jayaraman, Balaji, Krishnan, Rishikesh, Goyal, Puneet, Furkay, Stephen S., Nowak, Edward J., Iyer, Subramanian S., Murali, Kota V. R. M.

“…We report experimental characterization and modeling of direct and trap-assisted tunneling (TAT) in high-K metal gate (HKMG)-based access transistor and deep…”
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Modeling of Variation in Submicrometer CMOS ULSI Technologies by Springer, S.K., Lee, S., Lu, N., Nowak, E.J., Plouchart, J.-O., Watts, J.S., Williams, R.Q., Zamdmer, N.

“…The scaling of semiconductor technologies from 90- to 45-nm nodes highlights the need for accurate and predictive compact models that address the regime where…”
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Physiological and anatomical responses to water deficits in the CAM epiphyte Tillandsia ionantha (Bromeliaceae) by Nowak, E.J, Martin, C.E

“…Although physiological responses to drought have been examined in several species of epiphytic bromeliads, few have included a comprehensive methodological…”
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Can macroscopic oxide thickness uniformity improve oxide reliability? by Wu, E.Y., Nowak, E.J., Vollertsen, R.-P.

“…In this work, we investigated both experimentally and numerically the impact of macroscopic oxide thickness uniformity on Weibull breakdown characteristics for…”
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MOSFET technology for low-voltage/low-power applications by Foty, D.P., Nowak, E.J.

“…Certain limits influence MOSFET technology in low-voltage applications. When we reduce the power supply voltage in modern short-channel devices, both active…”
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Titanium silicide/silicon nonohmic contact resistance for NFET's, PFET's, diffused resistors, and NPN's in a BiCMOS technology by Hook, T.B., Mann, R.W., Nowak, E.J.

“…Self-aligned titanium silicide is often used to minimize the polysilicon and diffusion sheet resistances. Current is delivered to the channel of FET's, the…”
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Turning silicon on its edge [double gate CMOS/FinFET technology] by Nowak, E.J., Aller, I., Ludwig, T., Kim, K., Joshi, R.V., Ching-Te Chuang, Bernstein, K., Puri, R.

“…Double-gate devices will enable the continuation of CMOS scaling after conventional scaling has stalled. DGCMOS/FinFET technology offers a tactical solution to…”
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Improved effective switching current (IEFF+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlation by Xiaojun Yu, Shu-jen Han, Zamdmer, N., Jie Deng, Nowak, E.J., Rim, K.

“…New effective drive current I EFF + methodologies are demonstrated in this paper to address predictability of circuit performance across wide Vt range and…”
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Self-Consistent and Efficient Electro-Thermal Analysis for Poly/Metal Gate FinFETs by Kumar, S., Joshi, R.V., Ching-Te Chuang, Keunwoo Kim, Murthy, J.Y., Schonenberg, K.T., Nowak, E.J.

“…A self-consistent and efficient computational 3D modeling methodology for analyzing thermal and electrical transport in nano-scale devices is developed. The…”
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45 nm SOI and Beyond - Getting to a General Purpose Technology by Iyer, S.S., Nowak, E.J.

“…SOI technology has taken power/performance benefits of CMOS beyond those of bulk-CMOS technology in the arena of high-performance applications, including 4.7…”
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Weibull breakdown characteristics and oxide thickness uniformity by Wu, E.Y., Nowak, E.J., Vollertsen, R.-P., Han, L.-K.

“…In this work, we investigated both experimentally and numerically the impact of macroscopic oxide thickness uniformity on Weibull breakdown characteristics for…”
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A High-Performance, Low Leakage, and Stable SRAM Row-Based Back-Gate Biasing Scheme in FinFET Technology by Joshi, R.V., Keunwoo Kim, Williams, R.Q., Nowak, E.J., Ching-Te Chuang

“…This paper describes back-gate biasing scheme using independent-gate controlled asymmetrical (n + /p + polysilicon gates) FinFETs devices and its applications…”
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Practical performance/power alternatives within an existing CMOS technology generation by Bernstein, Kerry, Bertsch, John E., Clark, William F., Ellis-Monaghan, John J., Heller, Larry G., Nowak, Edward J.

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Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges by Jung-Suk Goo, Williams, R.Q., Workman, G.O., Qiang Chen, Sungjae Lee, Nowak, E.J.

“…This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body…”
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Scaling planar silicon devices by Ching-Te Chuang, Bernstein, K., Joshi, R.V., Puri, R., Kim, K., Nowak, E.J., Ludwig, T., Aller, I.

“…The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and…”
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Ultimate CMOS ULSI performance by Nowak, E.J.

“…Ultra-Large-Scale Integration (ULSI) CMOS technology is advancing beyond the realm of conventional scaling theory, requiring a new approach to the problem of…”
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Performance, Reliability, and Supply Voltage Reduction, with the Addition of Temperature as a Design Variable by Foty, Daniel P., Nowak, Edward J.

“…In any technology design, there rarely are "absolute" decisions that must be made. Instead, a variety of variables and choices must be evaluated to arrive at…”
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