Effect of dopant Cr ions on the dielectric properties of melt-grown ZnSe crystals

Effect of dopant Cr ions on the dielectric properties of melt-grown ZnSe crystals

The frequency and temperature dependences of the real and imaginary parts of the permittivity of Cr-doped ( n Cr ≅ 10 18 cm −3 ) melt-grown ZnSe crystals have been measured in the low-frequency region. It has been established that such doping reduces the heterogeneity of the dielectric properties an...

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Bibliographic Details
Published in:Physics of the solid state Vol. 55; no. 1; pp. 60 - 63
Main Authors: Chugai, O. N., Gerasimenko, A. S., Komar’, V. K., Nalivaiko, D. P., Oleinik, S. V., Podshivalova, O. V., Sulima, S. V., Novokhatskaya, T. N.
Format: Journal Article
Language:English
Published: Dordrecht SP MAIK Nauka/Interperiodica 2013
Springer
Subjects:
Analysis
Dielectrics
Electrical conductivity
Physics
Physics and Astronomy
Solid State Physics
Zinc Selenide
Dielectric Property
Dopant Atom
ZnSe
Dope Crystal
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Summary:The frequency and temperature dependences of the real and imaginary parts of the permittivity of Cr-doped ( n Cr ≅ 10 18 cm −3 ) melt-grown ZnSe crystals have been measured in the low-frequency region. It has been established that such doping reduces the heterogeneity of the dielectric properties and the level of energy losses of ac electric field in a crystalline ingot. The effect of dopant atoms on the dielectric properties has been explained as being caused by formation of defect associates with participation of these atoms and intrinsic crystal defects.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783413010113