Search Results - "Novikov, Innokenty I."

High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance by Blokhin, Sergey A., Babichev, Andrey V., Gladyshev, Andrey G., Karachinsky, Leonid Ya, Novikov, Innokenty I., Blokhin, Alexey A., Bobrov, Mikhail A., Maleev, Nikolay A., Andryushkin, Vladislav V., Denisov, Dmitrii V., Voropaev, Kirill O., Zhumaeva, Irina O., Ustinov, Victor M., Egorov, Anton Yu, Ledentsov, Nikolay N.

“…High power single mode wafer-fused 1300-nm VCSELs with a gain region based on InGaAs/InAlGaAs short period superlattice are fabricated. An InP-based optical…”
Get full text

Photoluminescence of 1300 nm Range Strained InGaAs/InGaAlAs Superlattices by Andryushkin, Vladislav V., Novikov, Innokenty I., Pirogov, Evgeny V., Sobolev, Maksim S., Rochas, Stanislav S., Babichev, Andrey V., Karachinsky, Leonid Ya, Egorov, Anton Yu

“…The work presents the results on the creation and investigation of their optical properties of several heterostructures based on short period strained…”
Get full text

Fabrication and Characterization of 5.2 um Quantum-Cascade Lasers Grown by Molecular-Beam Epitaxy by Kolodeznyi, Evgenii S., Babichev, Andrey V., Gladyshev, Andrey G., Kharin, Nikita Yu, Panevin, Vadim Yu, Dudelev, Vladislav V., Slipchenko, Sergey O., Lyutetskii, Andrey V., Karachinsky, Leonid Ya, Novikov, Innokenty I., Pikhtin, Nikita A., Egorov, Anton Yu, Sokolovskii, Grigorii S.

“…We present the results on the fabrication and time-resolved spectral characterization of 5.2 um range quantum-cascade laser. 40 stages of active region are…”
Get full text

Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques by Babichev, Andrey V., Komarov, Sergey D., Tkach, Julia S., Kryzhanovskaya, Natalia V., Nadtochiy, Alexey M., Blokhin, Alexey A., Blokhin, Sergei A., Nevedomskiy, Vladimir N., Maleev, Nikolay A., Gladyshev, Andrey G., Karachinsky, Leonid Ya, Novikov, Innokenty I.

“…We present the results on the formation and micro-photoluminescence studies of In 0.63 Ga 0.37 As/GaAs quantum dots grown by metal-organic vapour-phase epitaxy…”
Get full text

Collective Resonance and Form-Factor of Homogeneous Broadening in Semiconductors by Sergey V. Zaitsev, Sergey V. Zaitsev, Nikita Yu. Gordeev, Nikita Yu. Gordeev, Leonid Ya. Karachinsky, Leonid Ya. Karachinsky, Vladimir I. Kopchatov, Vladimir I. Kopchatov, Innokenty I. Novikov, Innokenty I. Novikov, Peter S. Kop'ev, Peter S. Kop'ev

“…The concept of resonant carrier many body interaction during radiative recombination was applied to explain spectra of quantum well electroluminescence at 77…”
Get full text

High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence by Maximov, M.V., Shernyakov, Y.M., Novikov, I.I., Kuznetsov, S.M., Karachinsky, L.Ya, Gordeev, N.Yu, Kalosha, V.P., Shchukin, V.A., Ledentsov, N.N.

“…We address the design and performance issues of 640-nm range GaInP-AlGaInP laser diodes based on a longitudinal photonic bandgap crystal (PBC). The…”
Get full text

Quantum-Cascade Lasers with U-Shaped Resonator: Single Frequency Generation at Room Temperature by Dudelev, Vladislav V., Pikhtin, Nikita A., Karachinsky, Leonid Ya, Egorov, Anton Yu, Sokolovskii, Grigorii S., Babichev, Andrey V., Mikhailov, Dmitriy A., Gladyshev, Andrey G., Losev, Sergey N., Kognovitskaya, Elena A., Novikov, Innokenty I., Lyuretskiy, Andrey V., Slipchenko, Sergey O.

“…Summary form only given. Single-frequency generation of the quantum-cascade lasers (QCLs) is the key for many applications including gas analysis and free…”
Get full text

Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures by Novikov, Innokenty I., Nadtochiy, Alexey M., Potapov, Aleksandr Yu, Gladyshev, Andrey G., Kolodeznyi, Evgenii S., Rochas, Stanislav S., Babichev, Andrey V., Andryushkin, Vladislav V., Denisov, Dmitriy V., Karachinsky, Leonid Ya, Egorov, Anton Yu, Bougrov, Vladislav E.

“…The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with 1550 nm range strained quantum wells have been…”
Get full text

6-mW Single-Mode High-Speed 1550-nm Wafer-Fused VCSELs for DWDM Application by Babichev, Andrey V., Karachinsky, Leonid Ya, Novikov, Innokenty I., Gladyshev, Andrey G., Blokhin, Sergey A., Mikhailov, Sergey, Iakovlev, Vladimir, Sirbu, Alexei, Stepniak, Grzegorz, Chorchos, Lukasz, Turkiewicz, Jaroslaw P., Voropaev, Kirill O., Ionov, Alexander S., Agustin, Mikel, Ledentsov, Nikolay N., Egorov, Anton Yu

“…This paper presents data on wafer-fused 1550-nm vertical-cavity surface-emitting lasers (VCSELs) based on the active region and distributed Bragg reflectors…”
Get full text

Gain characteristics of In0.60Ga0.40As/In0.53Al0.20Ga0.27As superlattice active regions for vertical-cavity surface-emitting lasers by Kopytov, P.E., Andryushkin, V.V., Pirogov, E.V., Sobolev, M.S., Babichev, A.V., Shernyakov, Y.M., Maximov, M.V., Lyutetskiy, A.V., Pikhtin, N.A., Karachinsky, L.Ya, Novikov, I.I., Sicong, Tian, Egorov, A.Yu

“…The results of investigation of the gain properties of 1300 nm vertical-cavity surface-emitting lasers active regions based on…”
Get full text

Optimization of the optical scheme of a photodetector module operating in the spectral range of 1.3-1.6 μm by Kovach, Y.N., Andryushkin, V.V., Kolodeznyi, E.S., Novikov, I.I., Petrenko, A.A., Kamarchuk, A.V., Rochas, S.S., Bauman, D.A.

“…Optical system consisting of single-mode optical fiber and p-i-n photodiode semiconductor chip with InGaAs active layer was investigated. Considered…”
Get full text

Influence of low temperatures and thermal annealing on the optical properties of InGaPAs quantum dots by Andryushkin, V.V., Dragunova, A.S., Komarov, S.D., Nadtochiy, A.M., Gladyshev, A.G., Babichev, A.V., Uvarov, A.V., Novikov, I.I., Kolodeznyi, E.S., Karachinsky, L.Ya, Kryzhanovskaya, N.V., Nevedomskii, V.N., Egorov, A.Yu, Bougrov, V.E.

“…The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing…”
Get full text

Tilted Wave Lasers: A Way to High Brightness Sources of Light by Shchukin, V, Ledentsov, N, Posilovic, K, Kalosha, V, Kettler, T, Seidlitz, D, Winterfeldt, M, Bimberg, D, Gordeev, N Y, Karachinsky, L Y, Novikov, I I, Shernyakov, Y M, Chunareva, A V, Maximov, M V, Bugge, F, Weyers, M

“…Semiconductor laser diodes are conventionally based on a relatively thin waveguide structure grown epitaxially on a thick single crystalline substrate, wherein…”
Get full text

High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide by Maximov, M.V., Shernyakov, Y.M., Novikov, I.I., Karachinsky, L.Ya, Gordeev, N.Yu, Ben-Ami, U., Bortman-Arbiv, D., Sharon, A., Shchukin, V.A., Ledentsov, N.N., Kettler, T., Posilovic, K., Bimberg, D.

“…We report on edge-emitting lasers based on the 1- and 2-D longitudinal photonic bandgap crystal concept. The longitudinal photonic bandgap crystal (PBC) design…”
Get full text

Electrophysical properties of PIN photodiodes of the 2.2-2.6 μm range based on InGa(Al)As/InP heterostructures with a metamorphic buffer layer by Vasilkova, Elena I., Pirogov, Evgeny V., Shubina, Kseniya Yu, Voropaev, Kirill O., Vasil’ev, Аndrey А., Karachinsky, Leonid Ya, Novikov, Innokenty I., Barantsev, Oleg V., Sobolev, Maxim S.

“…Due to a large number of applications in the near and short-wave IR spectrum and a relatively high detectivity, PIN photodiodes based on epitaxial…”
Get full text

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots by Blokhin, S.A., Maleev, N.A., Kuzmenkov, A.G., Sakharov, A.V., Kulagina, M.M., Shernyakov, Y.M., Novikov, I.I., Maximov, M.V., Ustinov, V.M., Kovsh, A.R., Mikhrin, S.S., Ledentsov, N.N., Lin, G., Chi, J.Y.

“…Molecular beam epitaxy-grown 0.98-mum vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active…”
Get full text

Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept by Blokhin, S.A., Karachinsky, L.Ya, Novikov, I.I., Gordeev, N.Yu, Sakharov, A.V., Maleev, N.A., Kuzmenkov, A.G., Shernyakov, Y.M., Maximov, M.V., Kovsh, A.R., Mikhrin, S.S., Shchukin, V.A., Ledentsov, N.N., Ustinov, V.M., Bimberg, D.

“…We have studied broad-area vertical-cavity surface-emitting lasers grown in the antiwaveguiding approach (AVCSELs). The AVCSEL-type devices were fabricated in…”
Get full text

Turn-on delay in the mid-infrared quantum-cascade lasers: experiment and numerical simulations by Cherotchenko, Evgenia D., Dudelev, Vladislav V., Mikhailov, Dmitry A., Losev, Sergey N., Babichev, Andrey V., Gladyshev, Andrey G., Novikov, Innokenty I., Lutetskiy, Andrey V., Veselov, Dmitry A., Slipchenko, Sergey O., Pikhtin, Nikita A., Karachinsky, Leonid Ya, Denisov, Dmitry V., Kuchinskii, Vladimir I., Kognovitskaya, Elena A., Egorov, Anton Yu, Teissier, Roland, Baranov, Alexei N., Sokolovskii, Grigorii S.

“…Turn-on delay is measured to be much longer and its pump-current dependence different from theoretical predictions for mid-infrared InP- and InAs-based…”
Get full text

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots by BLOKHIN, Sergey A, MALEEV, Nikolai A, MIKHRIN, Sergey S, LEDENTSOV, Nikolai N, LIN, Gray, CHI, Jim Y, KUZMENKOV, Alexander G, SAKHAROV, Alexey V, KULAGINA, Marina M, SHERNYAKOV, Yuri M, NOVIKOV, Innokenty I, MAXIMOV, Mikhail V, USTINOV, Victor M, KOVSH, Alexey R

Get full text