Search Results - "Nouet, Gerard"

A chemical method to graft carbon nanotubes onto a carbon fiber by Laachachi, Abdelghani, Vivet, Alexandre, Nouet, Gérard, Ben Doudou, Bessem, Poilâne, Christophe, Chen, Jun, Bo bai, Jin, Ayachi, M'Hamed

“…A simple method is developed for grafting carbon nanotubes (CNTs) onto a carbon fiber surface. CNT and carbon fiber undergo an oxidation treatment. Oxidation…”
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Photonic band gap structures in the Thue-Morse lattice by Lei, Huaping, Chen, Jun, Nouet, Gérard, Feng, Songling, Gong, Qian, Jiang, Xunya

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Structural analysis of thick GaN films grown by hydride vapour phase epitaxy by Ruterana, Pierre, Chen, Jun, Nouet, Gérard, Lei, Benliang, Ye, Haohua, Yu, Guanghui, Qi, Ming, Li, Aizhen

“…Thick GaN films were deposited on sapphire substrate by hydride vapour phase epitaxy (HVPE) in two steps at 1050 °C. The substrate was first nitridated for…”
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The methods to detect vacuum polarization by evanescent modes by Li, Wei, Chen, Jun, Nouet, Gerard, Chen, Liang-yao, Jiang, Xunya

“…We propose the evanescent-mode-sensing methods to probe the quantum electrodynamics (QED) vacuum polarization. From our methods, high-sensitivity can be…”
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Swift heavy ions effects in III–V nitrides by Mansouri, S., Marie, P., Dufour, C., Nouet, G., Monnet, I., Lebius, H.

“…Four III–V nitrides, BN, AlN, GaN and InN have been irradiated under normal incidence at 300K at GANIL (Caen, France) accelerator with 132MeV 209Pb32+ swift…”
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Study of flash evaporated Culn1-x GaxTe2 (x=0, 0.5 and 1) thin films by Aissaoui, O., Bechiri, L., Mehdaoui, S., Benslim, N., Benabdeslem, M., Portier, Xavier, Lei, Huaping, Doualan, Jean-Louis, Nouet, Gerard, Otmani, A.

“…CuIn1 − xGaxTe2 thin films with x=0, 0.5 and 1, have been prepared by flash evaporation technique. These semiconducting layers present a chalcopyrite…”
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Microstructure analysis in strained-InGaN/GaN multiple quantum wells by Lei, Huaping, Chen, Jun, Jiang, Xunya, Nouet, Gérard

“…The barrier thickness effect on the energy and microstructure properties of InGaN/GaN multiple quantum wells is investigated with Stillinger–Weber potential…”
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Boron-rich boron nitride (BN) films prepared by a single spin-coating process of a polymeric precursor by Kho, Joong-Gon, Moon, Kyo-Tae, Nouet, Gerard, Ruterana, Pierre, Kim, Dong-Pyo

“…Crack-free and highly smooth boron-rich boron nitride (BN) films with a thickness of up to 2 μm have been prepared on Si and SiO 2/Si substrates by vacuum or…”
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TOPOLOGICAL LOCALISATION OF DEFECTS AT ATOMIC SCALE by Jernot, Jean-Paul, Jouannot-Chesney, Patricia, Lantuéjoul, Christian, Nouet, Gérard, Ruterana, Pierre

“…The problem addressed in this paper is the detection of defects on atomic structures. The procedure proposed is in two steps. At first a tessellation is built…”
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The methods to detect vacuum polarization by evanescent modes by Li, Wei, Chen, Jun, Nouet, Gerard, Chen, Liao-yao, Jiang, Xunya

“…We propose the evanescent-mode-sensing methods to probe the electrodynamics (QED) vacuum polarization. From our methods, high-sensitivity can be achieved even…”
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A chemical method to graft carbon nanotubes onto a carbon fiber by Laachachi, Abdelghani, Vivet, Alexandre, Nouet, Gérard, Ben Doudou, Bessem, Poilâne, Christophe, Chen, Jun, Bai, Jinbo

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The atomic and electronic structure of dislocations in Ga-based nitride semiconductors by Belabbas, I., Ruterana, P., Chen, J., Nouet, G.

“…The atomic and electronic properties of dislocations in III-N semiconductor layers, especially GaN, are presented. The atomic structure of the edge threading…”
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Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation by Lei, Benliang, Yu, Guanghui, Ye, Haohua, Meng, Sheng, Wang, Xinzhong, Lin, Chaotong, Qi, Ming, Li, Aizhen, Nouet, Gérard, Ruterana, Pierre, Chen, Jun

“…GaN films were deposited by hydride vapor phase epitaxy with and without adopting growth interruption modulation (GIM). The surface morphologies of these…”
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Characterization of thick HYPE GaN films by Nouet, Gerard, Ruterana, Pierre, Chen, Jun, Lei, Benliang, Ye, Haohua, Yu, Guanghui, Qi, Ming, Li, Aizhen

“…The morphology of the top surface for HVPE GaN layers grown on a MOCVD GaN template with a thin LT-AlN interlayer was investigated. This surface is…”
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Structural and Photoluminescence Study of Coevaporated CuInSe 2 /Si(100) Thin Films by Merdes, Saoussen, Bechiri, Lakhdar, Benabdeslem, Mohammed, Benslim, Noureddine, Madelon, Roger, Nouet, Gérard, Sano, Masatoshi, Ando, Shizutoshi

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Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN by Wójtowicz, T., Gloux, F., Ruterana, P., Nouet, G., Bodiou, L., Braud, A., Lorenz, K., Alves, E.

“…In this work we carry out characterization of GaN implanted with Tm and Eu ions by scanning and transmission electron microscopy. Structural investigation is…”
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Investigation of the atomic structure of the pure edge and a+c threading dislocations in gan layers grown by MBE by Ruterana, Pierre, Potin, Valérie, Nouet, Gérard, Bonnet, Roland, Loubradou, Marc

“…The active layers of GaN contain high densities of threading dislocations, which do not seem to exhibit important electrical activity. It is possible that this…”
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New buffer concept inherent to pulsed laser induced epitaxy by Guedj, Cyril, Boulmer, Jacques, Nouet, Gérard, Godet, C., Roca i Cabarrocas, P.

“…We demonstrate the growth of a 250 nm-thick graded buffer based on Si1−x−yGexCy. This buffer, with 0<x<0.25 and 0<y<0.004, looks entirely free from threading…”
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Modification by high energy ion irradiation of iron-alumina nano-composites by Laurent, Ch, Dooryhée, E., Dufour, C., Gourbilleau, F., Levalois, M., Nouet, G., Paumier, E.

“…This work reports on the current observations by transmission electron microscopy (TEM) of nano-composites irradiated by GeV heavy ions. The composite targets…”
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Characterization of thick HVPE GaN films by Nouet, Gérard, Ruterana, Pierre, Chen, Jun, Lei, Benliang, Ye, Haohua, Yu, Guanghui, Qi, Ming, Li, Aizhen

“…The morphology of the top surface for HVPE GaN layers grown on a MOCVD GaN template with a thin LT-AlN interlayer was investigated. This surface is…”
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