Search Results - "Noroozian, Sh"

The effect of methane dose and post annealing treatment on the formation of nano b-SiC buried layer in the silicon by Dibaji, H, Larijani, M M, Novinrooz, A, Salehkootahi, M, Afzalzadeh, R, Noroozian, Sh

“…Methane ions with 90 keV energy within the dose range of (0.4-4.1)x10@u1@u8 ions/cm@u2 was implanted into the silicon substrate using Kaufman ion source. The…”
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The effect of methane dose and post annealing treatment on the formation of nano β-SiC buried layer in the silicon by Dibaji, H., Larijani, M.M., Novinrooz, A., Salehkootahi, M., Afzalzadeh, R., Noroozian, Sh

“…Methane ions with 90 keV energy within the dose range of (0.4–4.1) × 10 18 ions/cm 2 was implanted into the silicon substrate using Kaufman ion source. The…”
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