E-beam re-aligned HBTs and a new broadband MMIC power amplifier using bathtub as heat sink

E-beam re-aligned HBTs and a new broadband MMIC power amplifier using bathtub as heat sink

A benchmark X-band AlGaAs-GaAs HBT MMIC power amplifier with 7 W output power, 14 dB gain and greater than 50% efficiency has been fabricated using a base-to-emitter re-aligned approach based on an electron-beam, direct-write technique. A novel flipside bathtub and metallization technology provides...

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Bibliographic Details
Published in:Proceedings of 1994 IEEE International Electron Devices Meeting pp. 203 - 206
Main Authors: Yang, L.W., Komiak, J.J., Kao, M.Y., Houston, D.E., Smith, D.P., Norheden, K.J.
Format: Conference Proceeding Journal Article
Language:English
Published: IEEE 1994
Subjects:
Broadband amplifiers
Electromagnetic heating
Gallium arsenide
Heat sinks
Heterojunction bipolar transistors
Microwave technology
MMICs
Power amplifiers
Thermal resistance
Voltage
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Summary:A benchmark X-band AlGaAs-GaAs HBT MMIC power amplifier with 7 W output power, 14 dB gain and greater than 50% efficiency has been fabricated using a base-to-emitter re-aligned approach based on an electron-beam, direct-write technique. A novel flipside bathtub and metallization technology provides a practical means to reduce the thermal resistance of HBT cells and greatly enhance the microwave power performance.< >
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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SourceType-Conference Papers & Proceedings-1
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ISBN:9780780321113
0780321111
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1994.383430