221 nm far ultraviolet-C AlGaN laser diode with optimized p-AlN electron blocking epilayers

221 nm far ultraviolet-C AlGaN laser diode with optimized p-AlN electron blocking epilayers

The optical characteristics of far ultraviolet-C (FUV) laser diode (LD), with optimized position of AlN electron blocking layer (EBL), is shown to enhance carrier injection into the multiquantum well region. The carrier behavior mechanism of FUV LDs is illustrated through the simulation results. The...

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Bibliographic Details
Published in:Optical and quantum electronics Vol. 56; no. 12
Main Authors: Shakir, Syeda Wageeha, Usman, Muhammad, Habib, Usman, Ali, Shazma, Bashir, Jamshad, Noor, Zoya
Format: Journal Article
Language:English
Published: New York Springer US 16-11-2024
Springer Nature B.V
Subjects:
Aluminum gallium nitrides
Aluminum nitride
Carrier injection
Characterization and Evaluation of Materials
Computer Communication Networks
Electrical Engineering
Far ultraviolet radiation
Lasers
Optical Devices
Optical properties
Optics
Photonics
Physics
Physics and Astronomy
Semiconductor lasers
Stimulated emission
Waveguides
Simulations
Recombination rate
Efficiency
Laser diode
Electron blocking layer
Far ultraviolet-C
Gain
AlGaN
Threshold
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Summary:The optical characteristics of far ultraviolet-C (FUV) laser diode (LD), with optimized position of AlN electron blocking layer (EBL), is shown to enhance carrier injection into the multiquantum well region. The carrier behavior mechanism of FUV LDs is illustrated through the simulation results. The optimization of AlN EBL position, in the p-region of the FUV LD, is studied in this work. FUV LD with p-AlN EBL, between last quantum barrier and p-waveguide, show an improved gain profile and stimulated emission. The optical power of this FUV LD has been found to have increased markedly. All our FUV LDs are emitting far ultraviolet-C emission i.e., 221 nm. To the best of our knowledge, 221 nm AlGaN LDs are hardly reported in the literature. Therefore, we believe our work on 221 nm AlGaN far ultraviolet-C laser diode will open new avenues for the research community.
ISSN:1572-817X
0306-8919
1572-817X
DOI:10.1007/s11082-024-07788-4