Search Results - "Nonogaki, Y."

Multi-institutional Comparison of Treatment Planning for Stereotactic Body Radiation Therapy of a Lung Tumor Using Different Prescription Methods by Baba, F, Shibamoto, Y, Iwana, M, Hashizume, C, Ayakawa, S, Matsui, T, Miyakawa, A, Hattori, Y, Nonogaki, Y, Tanaka, S, Hasegawa, S

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Analysis of Changes in Dose Distribution due to Respiration in Respiratory-Gated Stereotactic Body Radiation Therapy (SBRT) for Lung Tumors Using 4D-CT by Baba, F, Nonogaki, Y, Tanaka, S, Hasegawa, S, NIshihashi, M, Ayakawa, S, Iwana, M, Shibamoto, Y

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Evaluation of the Reproducibility of Lung Tumor Position in Respiratory-Gated Stereotactic Body Radiation Therapy (SBRT) Using Fluoroscopy of an On-Board Imager (OBI) System by Baba, F, Nonogaki, Y, Tanaka, S, Hasegawa, S, NIshihashi, M, Ayakawa, S, Iwana, M, Shibamoto, Y

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Volumetric Modulated Arc Therapy (VMAT) Versus Helical Tomotherapy (HT) for Localized Prostate Cancer: Dosimetric Comparison by Using the Identical Prescription Dose to the Prostate by Ayakawa, S, Sugie, C, Baba, F, Hayashi, A, Kosaki, K, Nonogaki, Y, Hasegawa, S, Tanaka, S, Komai, K, Shibamoto, Y

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Clinical Experience With Respiratory-Gated Stereotactic Body Radiation Therapy (SBRT) for Lung Tumors Using Audio Coaching by Baba, F, Shibamoto, Y, Matsui, T, Nonogaki, Y, Tanaka, S, Hasegawa, S, Miyakawa, A, Takemoto, S, Otsuka, S, Iwata, H

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Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy by Koizumi, A., Moriya, H., Watanabe, N., Nonogaki, Y., Fujiwara, Y., Takeda, Y.

“…We have grown Er,O-codoped InGaAs/GaAs multiple-quantum-well (MQW:Er,O) structures by low-pressure organometallic vapor phase epitaxy (OMVPE), and investigated…”
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Construction of the undulator beamline equipped with a UHV-STM for observations of synchrotron-radiation-stimulated surface reaction by Nonogaki, Y., Katoh, M., Matsushita, K., Suzui, M., Urisu, T.

“…An undulator beamline equipped with a UHV-scanning tunneling electron microscopy (STM) system has been designed and constructed at the UVSOR facility to…”
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Fabrication of avidin single molecular layer on silicon oxide surfaces and formation of tethered lipid bilayer membranes by Tero, R., Misawa, N., Watanabe, H., Yamamura, S., Nambu, S., Nonogaki, Y., Urisu, T.

“…Single molecular layer of avidin is fabricated on an atomically flat SiO2 surface and characterized by atomic force microscopy (AFM) and infrared reflection…”
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InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE by Nonogaki, Y, Iguchi, T, Fuchi, S, Fujiwara, Y, Takeda, Y

“…We have successfully obtained InAs dots on InP (001) by droplet hetero-epitaxy and observed room-temperature photoluminescence (PL) spectrum with a peak at…”
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Formation of InAs islands on InP (001) by droplet hetero-epitaxy by Nonogaki, Y., Iguchi, T., Fujiwara, Y., Takeda, Y.

“…We have successfully obtained InAs islands on InP (001) by a novel droplet hetero-epitaxy using low-pressure organometallic vapor phase epitaxy (LP-OMVPE). The…”
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SR-stimulated etching and OMVPE growth for semiconductor nanostructure fabrication by Nonogaki, Y, Hatate, H, Oga, R, Yamamoto, S, Fujiwara, Y, Takeda, Y, Noda, H, Urisu, T

“…Synchrotron radiation- (SR-)stimulated etching and selective area growth by organometallic vapor phase epitaxy were performed to form an ordered array of InP…”
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Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy by Nonogaki, Y., Iguchi, T., Fuchi, S., Fujiwara, Y., Takeda, Y.

“…We have successfully grown nanometer-scale InAs islands on GaP (001) by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Effects of substrate…”
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Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical properties of InP grown by organometallic vapour phase epitaxy with TMIn and TBP by Fujiwara, Y., Furuta, S., Makita, K., Ito, Y., Nonogaki, Y., Takeda, Y.

“…We have investigated effects of the hydrogen flow rate on growth characteristics and electrical/optical properties in InP grown by organometallic vapour phase…”
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Nanostructure formation on Si (111) surface assisted by synchrotron radiation illumination: Characterization by scanning tunneling microscopy by Nonogaki, Y., Gao, Y., Mekaru, H., Miyamae, T., Urisu, T.

“…The surface structures after the synchrotron radiation (SR) stimulated removal of native oxide on Si (111) exactly oriented and 4° misoriented surfaces were…”
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Hot carrier relaxation dynamics in In0.53Ga0.47As studied by femtosecond pump-probe spectroscopy by NISHIWAKI, D, HAMANAKA, Y, NONOGAKI, Y, FUJIWARA, Y, TAKEDA, Y, NAKAMURA, A

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Design and construction of UVSOR-BL4A2 beam line for nano-structure processing by Takezoe, N., Yanagida, H., Tanaka, T., Kurosawa, K., Nonogaki, Y., Noda, H., Mekaru, H., Urisu, T.

“…We have designed and constructed a new beam line BL4A2 at UVSOR mainly for nano-structure fabrication based on synchrotron radiation stimulated surface…”
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Femtosecond relaxation dynamics of hot carriers in photoexcited In0.53Ga0.47As by Hamanaka, Y

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Er-related luminescence from self-assembled InAs quantum dots doped with Er by organometallic vapor-phase epitaxy by Fujiwara, Y, Kawamoto, T, Fuchi, S, Ichida, M, Nonogaki, Y, Nakamura, A, Takeda, Y

“…We have grown self-assembled Er-doped InAs quantum dots (QDs) in GaAs (0 0 1) by organometallic vapor-phase epitaxy (OMVPE). InAs QDs are on average 7 nm in…”
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Growth mode transition of InGaAs in OMVPE growth on GaP (001) by Moriya, H, Nonogaki, Y, Fuchi, S, Koizumi, A, Fujiwara, Y, Takeda, Y

“…We investigated growth of InGaAs with different In compositions on GaP (001) substrates by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). From…”
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Self-assembled InGaAs dots grown on GaP (0 0 1) substrate by low-pressure organometallic vapor phase epitaxy by Fuchi, S, Nonogaki, Y, Moriya, H, Koizumi, A, Fujiwara, Y, Takeda, Y

“…We have investigated surface morphology of InGaAs on GaP (001) substrate grown by low-pressure organometallic vapor phase epitaxy. By atomic force microscope…”
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