Search Results - "Nolph, C"

Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures by Kassim, J, Nolph, C, Jamet, M, Reinke, P, Floro, J

“…Heteroepitaxial Ge0.98Mn0.02 quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was…”
Get full text

Bonding geometry of Mn-wires on the Si(100)(2×1) surface by Nolph, C.A., Liu, H., Reinke, P.

“…The bonding geometry of monoatomic Mn-wires, which form on the reconstructed Si(100)(2×1) surface at room temperature, was investigated with scanning tunneling…”
Get full text

The growth of manganese layers on Si(1 0 0) at room temperature: A photoelectron spectroscopy study by Nolph, C.A., Vescovo, E., Reinke, P.

“…The combination of spin-and charge based electronics in future devices requires the magnetic doping of group IV semiconductors, and the formation of…”
Get full text

Manganese Nanostructures on Si(100)(2 × 1) Surfaces: Temperature-Driven Transition from Wires to Silicides by Nolph, C. A., Simov, K. R., Liu, H., Reinke, P.

“…The Si(100)(2 × 1) surface serves as a template for the formation of Mn wires at room temperature, which are the starting point for the annealing experiments…”
Get full text

An Intel 3 Advanced FinFET Platform Technology for High Performance Computing and SOC Product Applications by Hafez, W., Abdelkader, M., An, S., Auth, C., Bahr, D., Bambery, R., Beck, M., Bhowmick, S., Biggs-houck, J., Caselli, D., Chang, H.-Y., Chang, Y., Chauhan, S., Chikkadi, K., Chu, T., Connor, C., Diana, D., Dong, Y., Elfick, P., Elko-hansen, T., Gala, D., Geppert, C., Govindaraju, S., Grimm, W., Grunes, H., Guler, L., Guo, Z., Gupta, A., Havelia, S., Hazra, J., Islam, A., Jain, A., Jamil, M., Jang, M., Kabir, M., Kameswaran, J., Karl, E., Kelgeri, S., Kennedy, A., Kim, J., Kim, Y., Krishnan, D., Lee, G., Lee, H.-P., Lin, H., Luk, A., Luo, Y., Macfarlane, P., Mamun, A., Marla, K., Mckenna, E., Miah, A., Mistry, K., Mleczko, M., Moon, S., Nardi, D., Natarajan, S., Nolph, C., Nugroho, C., Nyhus, P., Oni, A., Packan, P., Paliwal, A., Pandey, R., Paredes, I., Park, K., Paulson, L., Pierre, A., Plekhanov, P., Prasad, C., Ramaswamy, R., Rode, J., Russell, R., Ryu, S., Saavedra, H., Salisbury, T., Sandford, J., Shah, F., Shang, K., Shekhar, P., Shu, A., Skoug, E., Sohn, J., Song, J., Sprinkle, M., Su, J., Tsao, R., Vaidya, A., Wallace, C., Wang, X., Wang, H., Ward, C., Wickramaratne, S., Wills, M., Wu, T., Xia-hua, Z., Xu, S., Yaung, J., Yu, Y., Zilm, M.

“…An advanced Intel 3 FinFET technology is presented that has been optimized to provide 10% logic scaling, a full node of performance improvement and improved…”
Get full text

Ge1−xMnx heteroepitaxial quantum dots: Growth, structure and magnetism by Kassim, J., Floro, J., Nolph, C., Reinke, P., Dennis, C.

“…Group IV dilute magnetic semiconductors (DMS) are candidates for the development of spin based devices due to their compatibility with the traditional…”
Get full text

Surface Driven Mn-Doping of Ge Quantum Dots - Mn-Interaction with the Ge QD{105} Facet and the Wetting Layer by Kassim, C. A. Nolph. J. K, Floro, J. A, Reinke, P

“…The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is…”
Get full text