Search Results - "Nofal, Issam"

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  1. 1

    Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology by Gu, Cheng, Chen, Rui, Belev, George, Shi, Shuting, Tian, Haonan, Nofal, Issam, Chen, Li

    Published in Materials (18-10-2019)
    “…Single-event effects (SEEs) in integrated circuits and devices can be studied by utilizing ultra-fast pulsed laser system through Two Photon Absorption…”
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    Journal Article
  2. 2

    Study of Neutron Soft Error Rate (SER) Sensitivity: Investigation of Upset Mechanisms by Comparative Simulation of FinFET and Planar MOSFET SRAMs by Jinhyun Noh, Correas, Vincent, Soonyoung Lee, Jongsung Jeon, Nofal, Issam, Cerba, Jacques, Belhaddad, Hafnaoui, Alexandrescu, Dan, YoungKeun Lee, Kwon, Steve

    Published in IEEE transactions on nuclear science (01-08-2015)
    “…The assessment of the soft-error rate (SER) of semiconductor devices continues to be important, even with the adoption of FinFET devices which overcome some…”
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    Journal Article
  3. 3

    A Layout-Based Rad-Hard DICE Flip-Flop Design by Wang, Haibin, Dai, Xixi, Ibrahim, Younis Mohammed Younis, Sun, Hongwen, Nofal, Issam, Cai, Li, Guo, Gang, Shen, Zicai, Chen, Li

    Published in Journal of electronic testing (01-02-2019)
    “…The DICE flip-flop has been rendered ineffective in deep-submicron technology nodes (e.g. 65 nm and 28 nm) due to charge sharing when exposed to single event…”
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    Journal Article
  4. 4

    Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research by Gu, Cheng, Belev, George, Tian, Haonan, Shi, Shuting, Nofal, Issam, Wen, Shijie, Chen, Li

    Published in Applied sciences (01-05-2020)
    “…Research on single event effects (SEEs) is significant to the design and manufacture of modern electronic devices. By applying two photon absorption (TPA)…”
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    Journal Article
  5. 5

    A 65 nm Temporally Hardened Flip-Flop Circuit by Li, Y.-Q, Wang, H.-B, Rui Liu, Li Chen, Nofal, Issam, Chen, Q.-Y, He, A.-L, Gang Guo, Baeg, Sang H., Shi-Jie Wen, Wong, Richard, Qiong Wu, Mo Chen

    Published in IEEE transactions on nuclear science (01-12-2016)
    “…A guard-gate based flip-flop circuit temporally hardened against single-event effects is presented in this paper. Compared to several existed techniques, the…”
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    Journal Article
  6. 6

    Methods for Proton Direct Ionization SEU Characterization and Orbital Error-Rate Estimation by Glorieux, Maximilien, Bonnoit, Thierry, Lange, Thomas, Gaillard, Remi, Nofal, Issam, Artola, Laurent, Poivey, Christian, Levacq, David, Rey, Romain, Heikki, Kettunen, Polo, Cesar Boatella

    Published in IEEE transactions on nuclear science (01-08-2024)
    “…In space environments, protons can cause single-event effects either by direct ionization or by nuclear reactions, whose secondary products deposit charges in…”
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    Journal Article
  7. 7

    A single event upset tolerant latch design by Wang, Haibin, Dai, Xixi, Wang, Yangsheng, Nofal, Issam, Cai, Li, Shen, Zicai, Sun, Wanxiu, Bi, Jinshun, Li, Bo, Guo, Gang, Chen, Li, Baeg, Sang

    Published in Microelectronics and reliability (01-09-2018)
    “…This paper presents a single-event-upset tolerant latch design based on a redundant structure featuring four storage nodes (i.e. Quatro). The reference…”
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    Journal Article
  8. 8

    Modeling and analysis of single-event transient sensitivity of a 65 nm clock tree by Li, Yuanqing, Chen, Li, Nofal, Issam, Chen, Mo, Wang, Haibin, Liu, Rui, Chen, Qingyu, Krstic, Milos, Shi, Shuting, Guo, Gang, Baeg, Sang H., Wen, Shi-Jie, Wong, Richard

    Published in Microelectronics and reliability (01-08-2018)
    “…The soft error rate (SER) due to heavy-ion irradiation of a clock tree is investigated in this paper. A method for clock tree SER prediction is developed,…”
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    Journal Article
  9. 9

    EDA support for functional safety - How static and dynamic failure analysis can improve productivity in the assessment of functional safety by Alexandrescu, Dan, Evans, Adrian, Glorieux, Maximilien, Nofal, Issam

    “…Integrated circuits used in high-reliability applications must demonstrate low failure rates and high-levels of fault detection coverage. Safety Integrity…”
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    Conference Proceeding