Search Results - "Noe, Pierre"

New insights into thermomechanical behavior of GeTe thin films during crystallization by Gallard, Marion, Amara, Mohamed Salah, Putero, Magali, Burle, Nelly, Guichet, Christophe, Escoubas, Stéphanie, Richard, Marie-Ingrid, Mocuta, Cristian, Chahine, Rebbeca R., Bernard, Mathieu, Kowalczyk, Philippe, Noé, Pierre, Thomas, Olivier

“…In this work, we reexamine Ge rejection in Ge-rich GeTe thin films with a slight deviation from stoichiometry using a unique combination of in situ…”
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Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb2Te3 Deposited by Industrial Magnetron Sputtering by Teresi, Salvatore, Sebe, Nicolas, Patterson, Jessy, Frottier, Théo, Kandazoglou, Aurélie, Noël, Paul, Sgarro, Paolo, Térébénec, Damien, Bernier, Nicolas, Hippert, Françoise, Jean‐Philippe Attané, Vila, Laurent, Noé, Pierre, Maxen Cosset‐Chéneau

“…Driving a spin‐logic circuit requires the production of a large output signal by spin‐charge interconversion in spin‐orbit readout devices. This should be…”
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Sub‐Picosecond Non‐Equilibrium States in the Amorphous Phase of GeTe Phase‐Change Material Thin Films by Martinez, Paloma, Blanchet, Valérie, Descamps, Dominique, Dory, Jean‐Baptiste, Fourment, Claude, Papagiannouli, Irène, Petit, Stéphane, Raty, Jean‐Yves, Noé, Pierre, Gaudin, Jérôme

“…The sub‐picosecond response of amorphous germanium telluride thin film to a femtosecond laser excitation is investigated using frequency‐domain interferometry…”
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Optical Properties of GeSe1−xTex Chalcogenide Materials Promising for on‐Chip Low and Ultra‐Low Loss Reconfigurable Photonics and Nonlinear Devices by Albanese, Anthony, Tomelleri, Martina, Karam, Lara, Dory, Jean‐Baptiste, Licitra, Christophe, Charbonnier, Benoît, Jager, Jean‐Baptiste, Coillet, Aurélien, Cluzel, Benoît, Noé, Pierre

“…The highly promising linear and nonlinear optical properties of innovative thin films of GeSe1–xTex chalcogenide materials in the amorphous as‐deposited state,…”
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Innovative Nanocomposites for Low Power Phase‐Change Memory: GeTe/C Multilayers by Térébénec, Damien, Bernier, Nicolas, Castellani, Niccolo, Bernard, Mathieu, Jager, Jean-Baptiste, Tomelleri, Martina, Paterson, Jessy, Cyrille, Marie-Claire, Tran, Nguyet-Phuong, Giordano, Valentina M., Hippert, Françoise, Noé, Pierre

“…Innovative nanocomposites consisting of [(GeTe)4 nm/C1 nm]10 multilayers (MLs) deposited by magnetron sputtering are integrated in phase‐change memory (PCM)…”
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Origin of the Unusual High Optical Nonlinearities Observed in Glassy Chalcogenides by Dory, Jean‐Baptiste, Ibnoussina, Meryem, Raty, Jean‐Yves, Jager, Jean‐Baptiste, Verdy, Anthonin, Coillet, Aurélien, Colman, Pierre, Albanese, Anthony, Tomelleri, Martina, Cluzel, Benoit, Noé, Pierre

“…Nonlinear photonics integrated at the chip scale opens the path to new applications in an increasing number of fields such as all‐optical computing, high bit…”
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Pulsed heterodyne interferometry for nonlinear SOI waveguide characterization by Sawant, Rajath, Ibnoussina, Meryem, Colman, Pierre, Jager, Jean-Baptiste, Charbonnier, Benoit, Noe, Pierre, Coillet, Aurélien, Cluzel, Benoit

“…Silicon waveguides are a promising candidate for integrated nonlinear optics applications. Nonlinear coefficients of Silicon on Insulator (SOI) waveguides have…”
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Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2Te3 Superlattices Used in Interfacial Phase‐Change Memory (iPCM) Devices by Kowalczyk, Philippe, Hippert, Françoise, Bernier, Nicolas, Mocuta, Cristian, Sabbione, Chiara, Batista‐Pessoa, Walter, Noé, Pierre

“…Van der Waals layered GeTe/Sb2Te3 superlattices (SLs) have demonstrated outstanding performances for use in resistive memories in so‐called interfacial…”
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Ovonic Threshold Switching in Se‐Rich GexSe1−x Glasses from an Atomistic Point of View: The Crucial Role of the Metavalent Bonding Mechanism by Raty, Jean-Yves, Noé, Pierre

“…The ovonic threshold switching (OTS) phenomenon, a unique discontinuity of conductivity upon electric‐field application, has been observed in many chalcogenide…”
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Impact of interfaces on scenario of crystallization of phase change materials by Noé, Pierre, Sabbione, Chiara, Bernier, Nicolas, Castellani, Niccolo, Fillot, Frédéric, Hippert, Françoise

“…Chalcogenide phase change materials (PCMs), such as Ge-Sb-Te alloys, have outstanding properties, which has led to their successful use for a long time in…”
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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed by Noé, Pierre, Verdy, Anthonin, d'Acapito, Francesco, Dory, Jean-Baptiste, Bernard, Mathieu, Navarro, Gabriele, Jager, Jean-Baptiste, Gaudin, Jérôme, Raty, Jean-Yves

“…Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide…”
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Phase‐Change and Ovonic Materials (fifth edition) by Noé, Pierre, Kooi, Bart J., Wuttig, Matthias

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Phase‐Change and Ovonic Materials (Second Edition) by Noé, Pierre, Kooi, Bart J., Wuttig, Matthias

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Phase‐Change and Ovonic Materials (Fourth Edition) by Noé, Pierre, Kooi, Bart J., Wuttig, Matthias

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Phase‐Change and Ovonic Materials (Third Edition) by Noé, Pierre, Kooi, Bart J., Wuttig, Matthias

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Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices by Térébénec, Damien, Castellani, Niccolo, Bernier, Nicolas, Sever, Vitomir, Kowalczyk, Philippe, Bernard, Mathieu, Cyrille, Marie-Claire, Tran, Nguyet-Phuong, Hippert, Françoise, Noé, Pierre

“…GeTe/Sb2Te3 superlattices (SLs) obtained by sputtering are integrated in phase‐change memory (PCM) devices with a “wall structure”. The high structural quality…”
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Crystallization of Ge2Sb2Te5 and nitrogren‐doped Ge2Sb2Te5 phase‐change‐materials thin films studied by in situ combined X‐ray scattering techniques by Fillot, Frédéric, Sabbione, Chiarra, Pierre, François, Hippert, Françoise, Noé, Pierre

“…The phase change from the amorphous to crystalline state which occurs upon thermal annealing in prototypical Ge2Sb2Te5 and nitrogen‐doped Ge2Sb2Te5…”
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Laser Generation of Sub‐Micrometer Wrinkles in a Chalcogenide Glass Film as Physical Unclonable Functions by Martinez, Paloma, Papagiannouli, Irene, Descamps, Dominique, Petit, Stéphane, Marthelot, Joël, Lévy, Anna, Fabre, Baptiste, Dory, Jean‐Baptiste, Bernier, Nicolas, Raty, Jean‐Yves, Noé, Pierre, Gaudin, Jérôme

“…Laser interaction with solids is routinely used for functionalizing materials' surfaces. In most cases, the generation of patterns/structures is the key…”
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Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films by Verdy, Anthonin, d'Acapito, Francesco, Dory, Jean-Baptiste, Navarro, Gabriele, Bernard, Mathieu, Noé, Pierre

“…Herein, the amorphous structure of Ge–Se–Sb–N chalcogenide thin films is investigated through Raman, infrared, and X‐ray absorption spectroscopies in the light…”
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Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe1−xTex Thin Films by Tomelleri, Martina, Hippert, Françoise, Farjot, Thierry, Licitra, Christophe, Vaxelaire, Nicolas, Dory, Jean-Baptiste, Benoit, Daniel, Giordano, Valentina, Noé, Pierre

“…The electrical, optical, and structural properties of GeSe1−xTex phase‐change materials thin films with 0.16 ≤ x ≤1 prepared by cosputtering of GeSe and GeTe…”
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