Search Results - "Nodjiadjim, V"

160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-Vppd Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications by Hersent, R., Konczykowska, A., Jorge, F., Blache, F., Nodjiadjim, V., Riet, M., Mismer, C., Renaudier, J.

“…This letter reports on a 108-GHz bandwidth 0.5-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> InP DHBT…”
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Tunable 100 Gbaud Transmitter Based on Hybrid Polymer-to-Polymer Integration for Flexible Optical Interconnects by Groumas, P., Zhang, Z., Katopodis, V., Konczykowska, A., Dupuy, J. Y., Beretta, A., Dede, A., Choi, J. H., Harati, P., Jorge, F., Nodjiadjim, V., Riet, M., Dinu, R., Cangini, G., Miller, E., Vannucci, A., Keil, N., Bach, H. G., Grote, N., Spyropoulou, M., Avramopoulos, H., Kouloumentas, C.

“…We introduce a hybrid integration platform based on the combination of passive and electro-optic polymers. We analyze the optical and physical compatibility of…”
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0.7- \mu m InP DHBT Technology With 400-GHz } and } and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits by Nodjiadjim, V., Riet, M., Mismer, C., Hersent, R., Jorge, F., Konczykowska, A., Dupuy, J.-Y.

“…We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T and f MAX of 400 GHz as well as a high fabrication yield…”
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Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs by Godin, J., Nodjiadjim, V., Riet, M., Berdaguer, P., Drisse, O., Derouin, E., Konczykowska, A., Moulu, J., Dupuy, J.-Y., Jorge, F., Gentner, J.-L., Scavennec, A., Johansen, T., Krozer, V.

“…We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ges50-GHz- clock mixed-signal ICs. In-depth study of device…”
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Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses by Koné, G.A., Grandchamp, B., Hainaut, C., Marc, F., Maneux, C., Labat, N., Zimmer, T., Nodjiadjim, V., Riet, M., Godin, J.

“…We report on the reliability of InGaAs/InP DHBT technology which has applications in very high-speed ICs (over 100Gbits/s). This work presents the results of…”
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Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design by Ghosh, S., Grandchamp, B., Koné, G.A., Marc, F., Maneux, C., Zimmer, T., Nodjiadjim, V., Riet, M., Dupuy, J.-Y., Godin, J.

“…The reliability of InP/InGaAs DHBT under high collector current densities and low junction temperatures is analyzed and modeled. From the Gummel…”
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Preliminary results of storage accelerated aging test on InP/InGaAs DHBT by Koné, G.A., Grandchamp, B., Hainaut, C., Marc, F., Maneux, C., Labat, N., Zimmer, T., Nodjiadjim, V., Godin, J.

“…We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests…”
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Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator by Laurent, S., Nallatamby, J. C., Prigent, M., Riet, M., Nodjiadjim, V.

“…This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb…”
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Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications by Hersent, R., Johansen, Tom K., Nodjiadjim, V., Jorge, F., Duval, B., Blache, F., Riet, M., Mismer, C., Konczykowska, A.

“…In this article, we present the modelling, design and characterization of a 3-Vppd linear-output-swing 90-GBd PAM-4 modulator driver, realised in III-V Lab's…”
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InP DHBT On-Wafer RF Characterization and Small-Signal Modelling up to 220 GHz by Davy, N., Deng, M., Nodjiadjim, V., Mukherjee, C., Riet, M., Mismer, C., Ardouin, B., Maneux, C.

“…In this paper, we perform on-wafer characterization of an InP double heterojunction bipolar (InP DHBT) up to 220 GHz using conventional characterization and…”
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Analog-Multiplexer (AMUX) circuit realized in InP DHBT technology for high order electrical modulation formats (PAM-4, PAM-8) by Hersent, R., Konczykowska, A., Jorge, F., Riet, M., Mismer, C., Nodjiadjim, V., Duval, B., Dupuy, J-Y.

“…Analog-Multiplexers (AMUXs) are attractive architectures to increase electro-optical transmitters' analog bandwidth through the time interleaving of several…”
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400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications by Nodjiadjim, V, Riet, M, Scavennec, A, Berdaguer, P, Piotrowicz, S, Jardel, O, Godin, J, Bove, P, Lijadi, M

“…This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 μm 2 emitter size 4- and 8- finger devices…”
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Double-Heterojunction Bipolar Transistor as THz Detector for Communications by Diouf, I., Nouvel, P., Varani, L., Penarier, A., Diakonova, N., Coquillat, D., Nodjiadjim, V., Riet, M., Zerounian, N., Aniel, F., Blin, S.

“…We investigate the use of an InP-based double-heterojunction bipolar transistor as a detector for wireless communications around 300~GHz. The sensitivity of…”
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Research Toward Wafer-Scale 3D Integration of InP Membrane Photonics With InP Electronics by Abdi, S., Nodjiadjim, V., Hersent, R., Riet, M., Mismer, C., de Vries, T., Williams, K. A., Jiao, Y.

“…In this study, we focus on the development of key processes towards wafer-scale 3-dimentional/vertical (3D) integration of Indium-Phosphide (InP) photonic…”
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Electrical and thermal characterization of single and multi-finger InP DHBTs by Midili, V., Nodjiadjim, V., Johansen, Tom K., Riet, M., Dupuy, J. Y., Konczykowska, A., Squartecchia, M.

“…This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the…”
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A physical based equivalent circuit modeling approach for ballasted InP DHBT multi-finger devices at millimeter-wave frequencies by Midili, V., Squartecchia, M., Johansen, T. K., Nodjiadjim, V., Riet, M., Dupuy, J. Y., Konczykowska, A.

“…Multifinger InP DHBTs can be designed with a ballasting resistor to improve power capability. However accurate modeling is needed to predict high frequency…”
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InP double heterojunction bipolar transistor for detection above 1 THz by Coquillat, D., Nodjiadjim, V., Konczykowska, A., Dyakonova, N., Consejo, C., Ruffenach, S., Teppe, F., Riet, M., Muraviev, A., Gutin, A., Shur, M., Godin, J., Knap, W.

“…We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature…”
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3D printed flat optics and InP heterojunction bipolar transistor based-detector for THz imaging by Suszek, J., Siemion, A., Coquillat, D., Nodjiadjim, V., Konczykowska, A., Riet, M., Sobczyk, A., Zagrajek, P., Palka, N., Czerwinska, E., Blocki, N., Kolodziejczyk, A., Dyakonova, N., Teppe, F., Consejo, C., Knap, W., Sypek, M.

“…Diffractive optical elements such as hyperbolic lens and quasi-spherical lens converting a divergent terahertz beam into the focal line segment perpendicular…”
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A Large-Swing 112-Gb/s Selector-Driver Based on a Differential Distributed Amplifier in InP DHBT Technology by Dupuy, J., Konczykowska, A., Jorge, F., Riet, M., Berdaguer, P., Nodjiadjim, V., Godin, J., Ouslimani, A.

“…We report a 2:1 selector-driver based on a differential distributed amplifier realized in a 0.7-μ m indium phosphide double heterojunction bipolar transistor…”
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0.7-$\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BV CE0 for High Speed and High Frequency Integrated Circuits by Nodjiadjim, V., Riet, M., Mismer, C., Hersent, R., Jorge, F., Konczykowska, A., Dupuy, J.-Y.

“…We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T and f MAX of 400 GHz as well as a high fabrication yield…”
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