Search Results - "Noculak, A."

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  1. 1

    Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics by Hahn, H., Achenbach, J., Ketteniss, N., Noculak, A., Kalisch, H., Vescan, A.

    Published in Solid-state electronics (2012)
    “…► We investigate consequences using CF 4/O 2 or CF 4 dry etches for gate trench opening. ► Oxygen addition reduces the incorporation of fluorine ions. ► We…”
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    Journal Article
  2. 2

    Quaternary Enhancement-Mode HFET With In Situ SiN Passivation by Ketteniss, N., Behmenburg, H., Hahn, H., Noculak, A., Hollander, B., Kalisch, H., Heuken, M., Vescan, A.

    Published in IEEE electron device letters (01-04-2012)
    “…A lattice-matched InAlGaN/GaN heterostructure with a barrier-layer thickness of 4 nm has been grown and passivated in situ with a 63-nm SiN by metal-organic…”
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    Journal Article
  3. 3

    MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates by Fieger, M., Eickelkamp, M., Rahimzadeh Koshroo, L., Dikme, Y., Noculak, A., Kalisch, H., Heuken, M., Jansen, R.H., Vescan, A.

    Published in Journal of crystal growth (2007)
    “…Al x Ga 1− x N/GaN high electron mobility transistor (HEMT) structures with different Al concentrations were grown by metal organic vapor phase epitaxy (MOVPE)…”
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    Journal Article Conference Proceeding
  4. 4

    A K-band high gain, low noise figure LNA using 0.13 μm logic CMOS technology by Dang, J., Sakalas, P., Noculak, A., Hinz, M., Meinerzhagen, B.

    “…A two stage cascode low noise amplifier using tapered inductors with optimized quality factors was designed in a 130 nm logic CMOS process. The K-band (24…”
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    Conference Proceeding
  5. 5

    Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses by Hahn, H., Yacoub, H., Zweipfennig, T., Lukens, G., Kotzea, S., Debald, A., Oculak, A. N, Negra, R., Kalisch, H., Vescan, A.

    Published in 2018 76th Device Research Conference (DRC) (01-06-2018)
    “…In the power switching market, GaN-on-Si technology is competing at low to medium blocking voltages (200-900 V). The challenge to obtain a sufficiently high…”
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    Conference Proceeding
  6. 6

    A semi-distributed method for inductor de-embedding by Dang, J., Noculak, A., Korndorfer, F., Jungemann, C., Meinerzhagen, B.

    “…This paper presents a de-embedding method based on pad and thru test structures for on-wafer inductor characterization. A transmission line model in…”
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    Conference Proceeding
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    Proby uprawy Citrullus colocynthis (L.) Schrad. i wstepna ocena przydatnosci nasion by Kostecka-Madalska, O, Noculak, A

    Published in Acta Agrobotanica (01-01-1971)
    “…Trials of cultivating Citrullus colocynthis (L.) Schrad. were carried out in the Medicinal Plant Garden of the Medical Academy to Wrocław. The seeds were…”
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    Journal Article
  9. 9

    Microbial transformation of cholesterol by Botrytis and Sclerotinia species strains by Nespiak, A, Noculak-Palczewska, A, Krolicki, Z, Krzyzanowska, J

    Published in Acta Mycologica (01-01-1983)
    “…The hydroxy group or 5-cholesten-3β-oll is oxidated by Botrytis cinerea into the keto group…”
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    Journal Article
  10. 10

    A low noise figure K-band receiver in 130 nm CMOS by Dang, J., Meinerzhagen, B., Bruckner, S., Schoebel, J., Noculak, A., Negra, R.

    “…A fully integrated K-band receiver consisting of a low noise amplifier (LNA) and a Gilbert-Mixer with DC current bleeding technique is implemented in 130 nm…”
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    Conference Proceeding
  11. 11

    A fully integrated 5.5 GHz cross-coupled VCO with high output power using 0.25μm CMOS technology by Dang, J., Noculak, A., Haddadinejad, S., Jungemann, C., Meinerzhagen, B.

    “…In this paper a PMOS-NMOS cross-coupled voltage controlled oscillator (VCO) using 0.25 μm CMOS technology is demonstrated. This VCO consumes 6.6 mW DC power…”
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    Conference Proceeding
  12. 12

    Processing and characterization of recessed-gate AlGaN/GaN HFETs by Kettenib, N., Eickelkamp, M., Noculak, A., Jansen, R.H., Vescan, A.

    “…AlGaN/GaN heterostructure field effect transistors with different gate recess depths have been fabricated using an ICP etch process. Subsequently, electrical…”
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    Conference Proceeding
  13. 13

    Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers by Cumana, J., Lautensack, C., Eickelkamp, M., Goliasch, J., Noculak, A., Vescan, A., Jansen, R.H.

    “…GaN HFETs and MISHFETs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some…”
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    Conference Proceeding
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