Search Results - "Nobuhide Yoshida"

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  1. 1

    A widely tunable CMOS Gm-C filter with a negative source degeneration resistor transconductor by Shinichi Hori, Tadashi Maeda, hitoshi Yano, Noriaki Matsuno, Keiichi Numata, Nobuhide Yoshida, Yuji Takahashi, Tomoyuki Yamase, Walkington, R., Hikaru, H.

    “…We propose a new negative source degeneration resistor (NSDR) transconductor to achieve a wide continuous-tuning range gm-C filter applicable for…”
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    Conference Proceeding
  2. 2

    A 40-Gb/s CDR Circuit With Adaptive Decision-Point Control Based on Eye-Opening Monitor Feedback by Noguchi, H., Yoshida, N., Uchida, H., Ozaki, M., Kanemitsu, S., Wada, S.

    Published in IEEE journal of solid-state circuits (01-12-2008)
    “…40-Gb/s clock and data recovery (CDR) circuit with an integrated high-precision eye-opening monitor (EOM) circuit and an adaptive control scheme for optimizing…”
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    Journal Article Conference Proceeding
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    Real-time current-waveform sensor with plugless energy harvesting from AC power lines for home/building energy-management systems by Takahashi, S, Yoshida, N, Maruhashi, K, Fukaishi, M

    “…Home/building energy-management systems (EMSs) driven by information technology are expected to be key to the achievement of an upgraded energy infrastructure,…”
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    Conference Proceeding
  5. 5

    Low-power-consumption direct-conversion CMOS transceiver for multi-standard 5-GHz wireless LAN systems with channel bandwidths of 5-20 MHz by Maeda, T., Yano, H., Hori, S., Matsuno, N., Yamase, T., Tokairin, T., Walkington, R., Yoshida, N., Numata, K., Yanagisawa, K., Takahashi, Y., Fujii, M., Hida, H.

    Published in IEEE journal of solid-state circuits (01-02-2006)
    “…This paper describes a low-power-consumption direct-conversion CMOS transceiver for WLAN systems operating at 4.9-5.95 GHz. Its power consumption is reduced by…”
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    Journal Article
  6. 6

    A Low-Power Dual-Band Triple-Mode WLAN CMOS Transceiver by Maeda, T., Matsuno, N., Hori, S., Yamase, T., Tokairin, T., Yanagisawa, K., Yano, H., Walkington, R., Numata, K., Yoshida, N., Takahashi, Y., Hida, H.

    Published in IEEE journal of solid-state circuits (01-11-2006)
    “…This paper describes a 0.18-mum CMOS direct-conversion dual-band triple-mode wireless LAN transceiver. The transceiver has a concurrent dual-band low-noise…”
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    Journal Article
  7. 7

    A 40Gb/s CDR with Adaptive Decision-Point Control Using Eye-Opening-Monitor Feedback by Noguchi, Hidemi, Yoshida, Nobuhide, Uchida, Hiroaki, Ozaki, Manabu, Kanemitsu, Shunichi, Wada, Shigeki

    “…In high-speed data link systems of over 40Gb/s, the data decision point in the CDR circuit is not often the optimum position of the eye diagram. The CDR…”
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    Conference Proceeding
  8. 8

    A Wireless Dual-Link System for Sensor Network Applications by Kimura, Tohru, Yano, Hitoshi, Aoki, Yuuichi, Yoshida, Nobuhide, Noda, Jun, Sukenari, Teruki, Konishi, Yusuke, Nakao, Toshiyasu, Mitsuhashi, Akitake, Taguchi, Daigo

    “…A reduced-power-consumption wireless ad-hoc multi-hop network system, the dual-link system,is been developed, using the following two technologies: Dual-link…”
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    Conference Proceeding
  9. 9

    A 35-to-46-Gb/s Ultra-Low Jitter Clock and Data Recovery Circuit for Optical Fiber Transmission Systems by Noguchi, H., Hosoya, K., Ohhira, R., Uchida, H., Noda, A., Yoshida, N., Wada, S.

    “…We demonstrated an ultra-low jitter clock and data recovery (CDR) circuit that covers an ultra wide frequency range from 35 Gb/s to 46 Gb/s. Our CDR has a…”
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    Conference Proceeding
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    Development of Battery and Charger Integration System (BCIS) for EV charging stations by Ishii, Y., Kogure, J., Shizuno, T., Itabashi, N., Yoshida, N., Nyu, T.

    “…The popularization of electric vehicles (EVs) will give rise to challenges that include expenses for capacity upgrades, power supply shortages, and long…”
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    Conference Proceeding
  14. 14

    Surface passivation of In sub(0.52)Al sub(0.48)As using (NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S by Yoshida, Nobuhide, Totsuka, Masahiro, Ino, Junsuke, Matsumoto, Satoru

    “…(NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S treatments were applied on In sub(0.52)Al sub(0.48)As surfaces. From X-ray photoelectron…”
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    Journal Article
  15. 15

    FDM-based wireless source synchronous 15-Mbps TRx with PLL-less receiver and 1-mm on-chip integrated antenna for 1.25-cm touch-and-proceed communication by Ishizaki, Haruya, Araki, Takahiro, Takahashi, Shingo, Ryu, Jisun, Uchida, Shin-ichi, Yoshida, Nobuhide, Takamiya, Makoto, Mizuno, Masayuki

    Published in 2010 Symposium on VLSI Circuits (01-06-2010)
    “…A 15-Mbps, single-channel wireless source synchronous (SWSS) transceiver with a 1-mm on-chip integrated loop antenna has been developed in 90-nm CMOS for…”
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    Conference Proceeding
  16. 16

    Chemical Vapor Deposition of Cu Film on SiO 2 Using Cyclopentadienylcoppertriethylphosphine by Chichibu, Shigefusa, Yoshida, Nobuhide, Higuchi, Hirofumi, Satoru Matsumoto, Satoru Matsumoto

    Published in Japanese Journal of Applied Physics (01-12-1992)
    “…Chemical vapor deposition of Cu film on SiO 2 has been studied using cyclopentadienylcoppertriethylphosphine (C 5 H 5 CuP(C 2 H 5 ) 3 ), which contains no…”
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    Journal Article
  17. 17

    Chemical vapor deposition of Cu film on SiO sub(2) using cyclopentadienyl-coppertriethylphosphine by Chichibu, Shigefusa, Yoshida, Nobuhide, Higuchi, Hirofumi, Matsumoto, Satoru

    “…Chemical vapor deposition of Cu film on SiO sub(2) has been studied using cyclopentadienyl-coppertriethylphosphine (C sub(5)H sub(5)CuP(C sub(2)H sub(5))…”
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    Journal Article
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    Surface Passivation of In 0.52 Al 0.48 As Using (NH 4 ) 2 S x and P 2 S 5 /(NH 4 ) 2 S by Yoshida, Nobuhide, Totsuka, Masahiro, Junsuke Ino, Junsuke Ino, Satoru Matsumoto, Satoru Matsumoto

    Published in Japanese Journal of Applied Physics (01-03-1994)
    “…(NH 4 ) 2 S x and P 2 S 5 /(NH 4 ) 2 S treatments were applied on In 0.52 Al 0.48 As surfaces. From X-ray photoelectron spectroscopy measurements, residual…”
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    Journal Article
  20. 20

    Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe 2 /CuAlSe 2 Heterostructure by Chichibu, Shigefusa, Sudo, Ryo, Yoshida, Nobuhide, Harada, Yoshiyuki, Uchida, Mei, Higuchi, Satoru Matsumoto

    Published in Japanese Journal of Applied Physics (01-03-1994)
    “…A single-heterostructure of CuGaSe 2 /CuAlSe 2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure…”
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    Journal Article