Search Results - "Nobuhide Yoshida"
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A widely tunable CMOS Gm-C filter with a negative source degeneration resistor transconductor
Published in ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705) (2003)“…We propose a new negative source degeneration resistor (NSDR) transconductor to achieve a wide continuous-tuning range gm-C filter applicable for…”
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Conference Proceeding -
2
A 40-Gb/s CDR Circuit With Adaptive Decision-Point Control Based on Eye-Opening Monitor Feedback
Published in IEEE journal of solid-state circuits (01-12-2008)“…40-Gb/s clock and data recovery (CDR) circuit with an integrated high-precision eye-opening monitor (EOM) circuit and an adaptive control scheme for optimizing…”
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3
Chemical vapor deposition of Cu film on SiO2 using cyclopentadienylcoppertriethylphosphine
Published in Japanese journal of applied physics (15-12-1992)Get full text
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4
Real-time current-waveform sensor with plugless energy harvesting from AC power lines for home/building energy-management systems
Published in 2011 IEEE International Solid-State Circuits Conference (01-02-2011)“…Home/building energy-management systems (EMSs) driven by information technology are expected to be key to the achievement of an upgraded energy infrastructure,…”
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Conference Proceeding -
5
Low-power-consumption direct-conversion CMOS transceiver for multi-standard 5-GHz wireless LAN systems with channel bandwidths of 5-20 MHz
Published in IEEE journal of solid-state circuits (01-02-2006)“…This paper describes a low-power-consumption direct-conversion CMOS transceiver for WLAN systems operating at 4.9-5.95 GHz. Its power consumption is reduced by…”
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Journal Article -
6
A Low-Power Dual-Band Triple-Mode WLAN CMOS Transceiver
Published in IEEE journal of solid-state circuits (01-11-2006)“…This paper describes a 0.18-mum CMOS direct-conversion dual-band triple-mode wireless LAN transceiver. The transceiver has a concurrent dual-band low-noise…”
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A 40Gb/s CDR with Adaptive Decision-Point Control Using Eye-Opening-Monitor Feedback
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01-02-2008)“…In high-speed data link systems of over 40Gb/s, the data decision point in the CDR circuit is not often the optimum position of the eye diagram. The CDR…”
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Conference Proceeding -
8
A Wireless Dual-Link System for Sensor Network Applications
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01-02-2008)“…A reduced-power-consumption wireless ad-hoc multi-hop network system, the dual-link system,is been developed, using the following two technologies: Dual-link…”
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9
A 35-to-46-Gb/s Ultra-Low Jitter Clock and Data Recovery Circuit for Optical Fiber Transmission Systems
Published in 2007 IEEE Compound Semiconductor Integrated Circuits Symposium (01-10-2007)“…We demonstrated an ultra-low jitter clock and data recovery (CDR) circuit that covers an ultra wide frequency range from 35 Gb/s to 46 Gb/s. Our CDR has a…”
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Conference Proceeding -
10
A 100 Gb/s transceiver with GND-VDD common-mode receiver and flexible multi-channel aligner
Published in Digest of technical papers - IEEE International Solid-State Circuits Conference (01-01-2002)“…A 5 Gb/s 20-channel transceiver uses 0.13 mu m 1.5 V CMOS technology. The sampling amplifier recovers plus or minus 100 mV 90 ps data over 0-1.5 V com-mon-mode…”
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11
A direct-conversion CMOS transceiver for 4.9-5.95GHz multi-standard WLANs
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Conference Proceeding -
12
Surface passivation of In0.52Al0.48As using (NH4)2Sx and P2S5/(NH4)2S
Published in Japanese journal of applied physics (01-03-1994)Get full text
Journal Article -
13
Development of Battery and Charger Integration System (BCIS) for EV charging stations
Published in 2012 International Conference on Smart Grid (SGE) (01-08-2012)“…The popularization of electric vehicles (EVs) will give rise to challenges that include expenses for capacity upgrades, power supply shortages, and long…”
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Conference Proceeding -
14
Surface passivation of In sub(0.52)Al sub(0.48)As using (NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01-01-1994)“…(NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S treatments were applied on In sub(0.52)Al sub(0.48)As surfaces. From X-ray photoelectron…”
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15
FDM-based wireless source synchronous 15-Mbps TRx with PLL-less receiver and 1-mm on-chip integrated antenna for 1.25-cm touch-and-proceed communication
Published in 2010 Symposium on VLSI Circuits (01-06-2010)“…A 15-Mbps, single-channel wireless source synchronous (SWSS) transceiver with a 1-mm on-chip integrated loop antenna has been developed in 90-nm CMOS for…”
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Conference Proceeding -
16
Chemical Vapor Deposition of Cu Film on SiO 2 Using Cyclopentadienylcoppertriethylphosphine
Published in Japanese Journal of Applied Physics (01-12-1992)“…Chemical vapor deposition of Cu film on SiO 2 has been studied using cyclopentadienylcoppertriethylphosphine (C 5 H 5 CuP(C 2 H 5 ) 3 ), which contains no…”
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Journal Article -
17
Chemical vapor deposition of Cu film on SiO sub(2) using cyclopentadienyl-coppertriethylphosphine
Published in Japanese Journal of Applied Physics, Part 2: Letters (01-01-1992)“…Chemical vapor deposition of Cu film on SiO sub(2) has been studied using cyclopentadienyl-coppertriethylphosphine (C sub(5)H sub(5)CuP(C sub(2)H sub(5))…”
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18
Low-pressure metalorganic chemical vapor deposition of a CuGaSe2/CuAlSe2 heterostructure
Published in Japanese journal of applied physics (1994)Get full text
Journal Article -
19
Surface Passivation of In 0.52 Al 0.48 As Using (NH 4 ) 2 S x and P 2 S 5 /(NH 4 ) 2 S
Published in Japanese Journal of Applied Physics (01-03-1994)“…(NH 4 ) 2 S x and P 2 S 5 /(NH 4 ) 2 S treatments were applied on In 0.52 Al 0.48 As surfaces. From X-ray photoelectron spectroscopy measurements, residual…”
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Journal Article -
20
Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe 2 /CuAlSe 2 Heterostructure
Published in Japanese Journal of Applied Physics (01-03-1994)“…A single-heterostructure of CuGaSe 2 /CuAlSe 2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure…”
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