Search Results - "Noborio, Masato"

Influences of coexisting O2 in H2O-annealing ambient on thermal oxidation kinetics and MOS interface properties on 4H–SiC (1–100) by Chu, Qiao, Noborio, Masato, Shimizu, Sumera, Kita, Koji

“…On 4H–SiC (1–100) m-face substrate, the process design of SiO2 growth by a conventional thermal oxidation accompanied with post-oxidation annealing (POA) in…”
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Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal--Oxide--Semiconductor Field-Effect Transistors by Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

“…Influence of effective fixed charges, which are located near the metal--oxide--semiconductor (MOS) interface, on short-channel effects in 4H-SiC MOS…”
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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices by Noborio, Masato, Grieb, Michael, Bauer, Anton J, Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

“…In this paper, we have investigated reliability of n- and p-type 4H-SiC(0001) metal--oxide--semiconductor (MOS) devices with N 2 O-grown oxides and deposited…”
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P-Channel MOSFETs on 4H-SiC and Nonbasal Faces Fabricated by Oxide Deposition and \hbox\hbox Annealing by Noborio, M., Suda, J., Kimoto, T.

“…In this paper, we have investigated 4H-SiC p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with deposited SiO 2 followed by N 2 O…”
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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices by Noborio, Masato, Grieb, Michael, Bauer, Anton J., Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

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Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing by Yamaji, Kazuki, Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

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4H-SiC MISFETs with nitrogen-containing insulators by Noborio, Masato, Suda, Jun, Beljakowa, Svetlana, Krieger, Michael, Kimoto, Tsunenobu

“…4H‐SiC MISFETs with nitrogen‐containing insulators have been fabricated and characterized. Several techniques have been explored to incorporate nitrogen in the…”
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4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11\bar0) by Horita, Masahiro, Noborio, Masato, Kimoto, Tsunenobu, Suda, Jun

“…4H silicon carbide (4H-SiC) metal-insulator- semiconductor field-effect transistors (MISFETs) with 4H aluminum nitride (4H-AlN) gate insulators have been…”
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Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd by Ebihara, Yasuhiro, Ichimura, Aiko, Mitani, Shuhei, Noborio, Masato, Takeuchi, Yuichi, Mizuno, Shoji, Yamamoto, Toshimasa, Tsuruta, Kazuhiro

“…Deep-P encapsulated 4H-SÌC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The…”
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Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density by Ebihara, Yasuhiro, Uehara, Junichi, Ichimura, Aiko, Mitani, Shuhei, Noborio, Masato, Takeuchi, Yuichi, Tsuruta, Kazuhiro

“…The bipolar degradation of Deep-p encapsulated 4H-SiC trench MOSFETs was investigated by using the pulse-current conduction system up to ultra-high current…”
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4H-SiC Lateral Double RESURF MOSFETs With Low on Resistance by Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

“…Designing and fabrication of 4H-SiC (0001) lateral MOSFETs with a double reduced surface field (RESURF) structure have been investigated to reduce ON…”
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N 2 O -grown oxides/ 4 H -SiC (0001), ( 03 3 ¯ 8 ) , and ( 11 2 ¯ 0 ) interface properties characterized by using p -type gate-controlled diodes by Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

“…The N 2 O -grown SiO 2 / 4 H -SiC (0001), ( 03 3 ¯ 8 ) , and ( 11 2 ¯ 0 ) interface properties in p -channel metal-oxide-semiconductor field-effect transistors…”
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N 2 O -grown oxides/4H-SiC (0001), (033¯8), and (112¯) interface properties characterized by using p-type gate-controlled diodes by Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

“…The N2O-grown SiO2/4H-SiC (0001), (033¯8), and (112¯0) interface properties in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been…”
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P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N20 Annealing by NOBORIO, Masato, SUDA, Jun, KIMOTO, Tsunenobu

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1580-V-40-mΩ · cm2 Double-RESURF MOSFETs on 4H-SiC (0001) by NOBORIO, Masato, SUDA, Jun, KIMOTO, Tsunenobu

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4H-SiC MIS Capacitors and MISFETs With Deposited SiNx/SiO2 Stack-Gate Structures : Silicon carbide devices and technology by NOBORIO, Masato, SUDA, Jun, KIMOTO, Tsunenobu

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Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs by Noborio, M., Kanzaki, Y., Jun Suda, Kimoto, T.

“…In this paper, a fundamental investigation on short-channel effects (SCEs) in 4H-SiC MOSFETs is given. Planar MOSFETs with various channel lengths have been…”
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Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure by Nanen, Y., Yoshioka, H., Noborio, M., Suda, J., Kimoto, T.

“…4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) with a 3-D gate structure, which has a top channel on the (0001) face and side-wall…”
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4H-SiC MIS Capacitors and MISFETs With Deposited \hbox/ \hbox Stack-Gate Structures by Noborio, M., Suda, J., Kimoto, T.

“…SiN x / SiO 2 stack-gate structures, followed by N 2 O annealing, have been investigated to improve the 4H-SiC metal- insulator-semiconductor (MIS) interface…”
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Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N 2 O Oxidation by Kimoto, Tsunenobu, Kanzaki, Yosuke, Noborio, Masato, Kawano, Hiroaki, Matsunami, Hiroyuki

“…4H-SiC(0001), (0001), and (1120) have been directly oxidized by N 2 O at 1300°C, and metal–oxide–semiconductor (MOS) interfaces have been characterized. The…”
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