Search Results - "Nobbe, Dan"

A Microtransceiver for UHF Proximity Links Including Mars Surface-to-Orbit Applications by Kuhn, William, Lay, Norman E., Grigorian, Edwin, Nobbe, Dan, Kuperman, Igor, Jeon, Jeongmin, Wong, Kai, Tugnawat, Yogesh, He, Xin

“…A low-volume low-mass low-power ultra-high-frequency radio transceiver for future planetary missions is described. The project targets a volume of less than 10…”
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Artificial Neural Network Model of SOS-MOSFETs Based on Dynamic Large-Signal Measurements by Youngseo Ko, Roblin, Patrick, Zarate-de Landa, Andres, Apolinar Reynoso-Hernandez, J., Nobbe, Dan, Olson, Chris, Martinez, Francisco Javier

“…A measurement-based quasi-static nonlinear field-effect transistor (FET) model relying on an artificial neural network (ANN) approach and using real-time…”
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High-Resolution Passive Phase Shifters for Adaptive Duplexing Applications in SOS Process by Amirkhanzadeh, Robabeh, Sjoland, Henrik, Redoute, Jean-Michel, Nobbe, Dan, Faulkner, Mike

“…Two high-resolution passive delay line phase shifters in silicon-on-sapphire are compared. Both make use of digitally tuned capacitor loaded π sections to…”
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A fully-integrated high power wideband power amplifier in 0.25 μm CMOS SOS technology by Jing-Hwa Chen, Helmi, Sultan R., Nobbe, Dan, Mohammadi, Saeed

“…A fully-integrated wideband power amplifier (PA) is implemented in 0.25 μm CMOS silicon-on-sapphire (SOS) technology. The PA is designed with 4 stacked…”
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Dynamic range performance of on-chip RF bandpass filters by Kuhn, W.B., Nobbe, D., Kelly, D., Orsborn, A.W.

“…Despite decades of research in developing "single-chip" radio transceivers, most commercial designs continue to rely on off-chip components for RF bandpass…”
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L-band 180° passive phase shifter employing auto-transformer in an SOS process by Amirkhanzadeh, Robabeh, Sjoland, Henrik, Redoute, Jean-Michel, Nobbe, Dan, Faulkner, Mike

“…In this paper, we present a new topology to implement a passive 180° phase shifter using on-chip auto-transformer in an SOS process. The measured results…”
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An Envelope-Tracking CMOS-SOS Power Amplifier with 50% Overall PAE and 29.3 dBm Output Power for LTE Applications by Hassan, M., Olson, C., Kovac, D., Yan, J. J., Nobbe, D., Kelly, D., Asbeck, P. M., Larson, L. E.

“…This paper presents a CMOS envelope tracking power amplifier for LTE band-13 (782 MHz) applications. The envelope amplifier is implemented in 0.18 μm bulk CMOS…”
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A Microtransceiver for UHF Proximity Links Including Mars Surface-to-Orbit Applications: Technical advances in deep space communications & tracking: Part 1 by KUHN, William, LAY, Norman E, GRIGORIAN, Edwin, NOBBE, Dan, KUPERMAN, Igor, JEON, Jeongmin, WONG, Kai, TUGNAWAT, Yogesh, XIN HE

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Silicon technology status and perspectives for multi-band and multi-standard challenges in upcoming RF frontends by Nobbe, D.W.

“…The RF frontend of a multi-band multi- standard cellular phone is currently realized using a variety of technologies. Integration is the historical rule for…”
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A 28 mW, 1.5 V GPS receiver in 0.25 μm silicon-on-sapphire CMOS process by Adamski, Jaroslaw, Losser, Daniel, Nobbe, Dan, Kuramochi, Takashi, Fujita, Ken, Pucci, Gregory, Dribinsky, Alexander

“…This paper describes a 28 mW, 1.5 V Global Positioning System (GPS) radio receiver chip implemented in a 0.25 μm silicon-on-sapphire CMOS process. The receiver…”
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A 28 mW, 1.5 V GPS receiver in 0.25 μm silicon-on-sapphire CMOS process by Adamski, J., Losser, D., Nobbe, D., Kuramochi, T., Fujita, K., Pucci, G., Dribinsky, A.

“…This paper describes a 28 mW, 1.5 V Global Positioning System (GPS) radio receiver chip implemented in a 0.25 mum silicon-on-sapphire CMOS process. The…”
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