Search Results - "Niu, Hirohiko"

Structural control of self-assembled PbTiO3 nanoislands fabricated by metalorganic chemical vapor deposition by Nonomura, Hajime, Nagata, Masaki, Fujisawa, Hironori, Shimizu, Masaru, Niu, Hirohiko, Honda, Koichiro

“…Self-assembled PbTiO3 nanoislands of three different shapes with orderly in-plane directions were fabricated on Pt∕SrTiO3 substrates by metalorganic chemical…”
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Ferroelectricity and local currents in epitaxial 5- and 9-nm-thick Pb(Zr,Ti)O3 ultrathin films by scanning probe microscopy by Fujisawa, Hironori, Shimizu, Masaru, Niu, Hirohiko, Nonomura, Hajime, Honda, Koichiro

“…Ferroelectricity and local currents in 5- and 9-nm-thick Pb(Zr,Ti)O3 ultrathin films epitaxially grown on SrRuO3∕SrTiO3(100) are investigated by…”
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Observations of initial growth stage of epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3(1 0 0) substrate by MOCVD by Fujisawa, Hironori, Nonomura, Hajime, Shimizu, Masaru, Niu, Hirohiko

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SELF-ASSEMBLED PbTiO3 NANO-ISLANDS PREPARED ON SrTiO3 BY METALORGANIC CHEMICAL VAPOR DEPOSITION by Nonomura, H, Fujisawa, H, Shimizu, M, Niu, H, Honda, K

“…PbTiO3 nano-islands were prepared on Pt(111)/SiO2/Si(100), Pt(111) /SrTiO3(111) and Pt(110)/SrTiO3(110) substrates by MOCVD. When PbTiO3 was deposited on…”
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Growth of ferroelectric PbZr Ti1−O3 thin films by metalorganic chemical vapor deposition (MOCVD) by Shimizu, Masaru, Fujisawa, Hironori, Niu, Hirohiko, Honda, Koichiro

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CRYSTALLINE AND FERROELECTRIC PROPERTIES OF Pb(Zr, Ti)O3 THIN FILMS GROWN BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR DEPOSITION by Shimizu, M, Okaniwa, M, Fujisawa, H, Niu, H

“…Low-temperature growth of Pb(Zr, Ti)O3 (PZT) thin films, as low as 390 C, by MOCVD using PbTiO3 seeds was achieved. Influence of the crystalline nature of…”
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Barrier height of InP Schottky diodes prepared by means of UV oxidation by NAKAMURA, J, NIU, H, KISHINO, S

“…Schottky diodes of Au/oxide/InP are fabricated by means of UV oxidation and evaluated by means of current-voltage ( I-V ) and capacitance-voltage ( C-V )…”
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ICTS of MOS interface states enhanced by gold diffusion by YOSHIDA, H, NIU, H, KISHINO, S

“…An enhancement of interface states of Si MOS diode by gold diffusion is observed by the isothermal capacitance transient spectroscopy (ICTS) measurement. The…”
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Investigation of Polarization Switching Processes in Pb(Zr,Ti)O 3 Capacitors Using Piezoresponse Imaging by Fujisawa, Hironori, Yagi, Tatsuya, Shimizu, Masaru, Niu, Hirohiko

“…Polarization switching processes in ferroelectric capacitors with epitaxial Pb(Zr,Ti)O 3 (PZT) thin films grown on SrRuO 3 /SrTiO 3 (100) were investigated…”
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Low Temperature Growth of Pb(Zr,Ti)O 3 Thin Films by Two Step MOCVD Using Seeds by Shimizu, Masaru, Okaniwa, Mamoru, Fujisawa, Hironori, Niu, Hirohiko

“…Perovskite Pb(Zr,Ti)O 3 (PZT) thin films were successfully obtained at 395°C by metalorganic chemical vapor deposition (MOCVD) using seeds. In our MOCVD, prior…”
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EFFECTS OF Pt/SrRuO3 TOP ELECTRODES ON FERROELECTRIC PROPERTIES OF EPITAXIAL (Pb, La)(Zr, Ti)O3 THIN FILMS by Kobune, M, Matsuura, O, Matsuzaki, T, Mineshige, A, Fujii, S, Fujisawa, H

“…Epitaxially c-axis oriented PLZT films with the composition (Pb0.925La0.075)(Zr0.4Ti0.6)O3 were deposited on Pt/MgO(100) substrate by rf-magnetron sputtering…”
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Step coverage characteristics of Pb(Zr, Ti)O3 thin films on various electrode materials by metalorganic chemical vapor deposition by SHIMIZU, M, HYODO, S, FUJISAWA, H, NIU, H, SHIOSAKI, T

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Chemical Composition of Al 2 O 3 /InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation by Matsuda, Tetsuro, Yoshida, Haruhiko, Nara, Naoki, Hirohiko Niu, Hirohiko Niu, Seigô Kishino, Seigô Kishino

“…Plasma and ultraviolet (UV) oxidation are used to obtain insulating films for the fabrication of an InP metal-insulator-semiconductor diode. A thin Al film is…”
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MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF (Pb, La)(Zr, Ti)O3 FILMS CRYSTALLIZED FROM AMORPHOUS STATE BY TWO-STEP POSTDEPOSITION ANNEALING by Kobune, M, Matsuura, O, Matsuzaki, T, Sawada, T, Fujisawa, H, Shimizu, M

“…Dense amorphous PLZT films with composition (Pb0.925La0.075)(Zr0.4Ti0.6)0.981O3 were deposited on Pt/MgO(100) substrates by rf-magnetron sputtering without…”
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Electrical properties of PZT thin films grown on Ir/IrO2 bottom electrodes by MOCVD by Fujisawa, Hironori, Hyodo, Satoshi, Jitsui, Kazuto, Shimizu, Masaru, Niu, Hirohiko, Okino, Hirotake, Shiosaki, Tadashi

“…Electrical properties of Ir/IrO 2 /PZT/Ir/IrO 2 and IrO 2 /Ir/PZT/Ir/IrO 2 capacitors were investigated. SIMS analysis showed that the Ir/IrO 2 bottom…”
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Precise angle and position detection utilizing optical interference on metal-oxide-semiconductor-type position-sensitive detectors by NIU, H, SHIRAISHI, T, YOSHIDA, H, MATSUDA, T, KISHINO, S

“…The optical interference effect is applied to the previously presented metal-oxide-semiconductor (MOS)-type position-sensitive detector (PSD) to achieve more…”
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A position-sensitive MOS device using lateral photovoltaic effect by NIU, H, AOKI, C, MATSUDA, T, TAKAI, M, MAEDA, M

“…A position-sensitive device (PSD) of MOS is presented which uses for the first time the dependence of the phase of lateral photovoltage on the position of…”
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Ferroelectricity and local currents in epitaxial 5- and 9 - nm -thick Pb ( Zr , Ti ) O 3 ultrathin films by scanning probe microscopy by Fujisawa, Hironori, Shimizu, Masaru, Niu, Hirohiko, Nonomura, Hajime, Honda, Koichiro

“…Ferroelectricity and local currents in 5- and 9 - nm -thick Pb ( Zr , Ti ) O 3 ultrathin films epitaxially grown on Sr Ru O 3 ∕ Sr Ti O 3 ( 100 ) are…”
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An MOS-type two-dimensional PSD using the AC photovoltage phase by NIU, H, MAEDA, M, MATSUBARA, Y, YOSHIDA, H, MATSUDA, T, KISHINO, S

“…A simulation and experiments have been conducted to develop a two-dimensional position-sensitive detector (PSD) from the previously presented MOS-type PSD. The…”
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Fill-factor calculation of solar cells affected by sheet resistance of surface layer by NIU, H, DOI, H, MATSUDA, T, MAEDA, M

“…A calculation methoed for the fill factor or I – V curve of a solar cell with an active thin layer is developed. This method correctly estimates the…”
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