Search Results - "Nissimoff, Albert"

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  1. 1

    Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time by Nissimoff, Albert, Martino, Joao Antonio, Aoulaiche, Marc, Veloso, Anabela, Witters, Liesbeth J., Simoen, Eddy, Claeys, Cor

    Published in IEEE electron device letters (01-06-2014)
    “…This letter reports on the spike anneal temperature influence on the retention time of 1T-dynamic random access memory cells using a single…”
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    Journal Article
  2. 2

    Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias by Sasaki, Katia R. A., Almeida, Luciano M., Nissimoff, Albert, Aoulaiche, Marc, Martino, Joao A., Simoen, Eddy, Claeys, Cor

    “…This paper aims to analyze the band gap and the pulsed back gate bias influence on the retention time of an UTBOX SOI applied as a 1T-DRAM memory cell. This…”
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    Conference Proceeding
  3. 3

    Two-sided read window observed on UTBOX SOI 1T-DRAM by Nissimoff, Albert, Sasaki, Katia R. A., Aoulaiche, Marc, Martino, Joao A., Simoen, Eddy, Claeys, Cor

    “…This paper analyzes the read windows of decananometer UTBOX SOI 1T-DRAM memory devices focusing on the mechanisms involved as a function of the applied gate…”
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    Conference Proceeding