Search Results - "Nissimoff, Albert"
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Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time
Published in IEEE electron device letters (01-06-2014)“…This letter reports on the spike anneal temperature influence on the retention time of 1T-dynamic random access memory cells using a single…”
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Journal Article -
2
Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias
Published in 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013) (01-09-2013)“…This paper aims to analyze the band gap and the pulsed back gate bias influence on the retention time of an UTBOX SOI applied as a 1T-DRAM memory cell. This…”
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Conference Proceeding -
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Two-sided read window observed on UTBOX SOI 1T-DRAM
Published in 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013) (01-09-2013)“…This paper analyzes the read windows of decananometer UTBOX SOI 1T-DRAM memory devices focusing on the mechanisms involved as a function of the applied gate…”
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Conference Proceeding