Search Results - "Nissim, Y.I."

A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications by Maher, H., Decobert, J., Falcou, A., Le Pallec, M., Post, G., Nissim, Y.I., Scavennec, A.

“…A triple channel HEMT structure grown on InP has been developed (the "Camel" HEMT). Starting from a dual channel (InGaAs/InP) HEMT that utilizes both the high…”
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Tunable UV-flash krypton lamp array useful for large area deposition and in situ UV annealing of Si-based dielectrics by Flicstein, J., Vitel, Y., Dulac, O., Debauche, C., Nissim, Y.I., Licoppe, C.

“…A low pressure VUV flashlamp at 100 Torr has been developed as a tool for ‘cold’ UV CVD and processing. The current density is related in a tunable fashion to…”
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Dry etch recess of an InGaAs/InAlAs/InP HEMT like structure using a low energy high density SiCl/sub 4/ plasma (ICP) by Maher, H., Etrillard, J., Decobert, J., Nissim, Y.I.

“…The use of an extremely low ion energy of an extremely dense plasma has been studied as a dry etching tool for InP device processing. Under these working…”
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Nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO 2 /SiO 2 source by Nissim, Y.I., Gibbons, J.F., Gold, R.B.

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Nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO2/SiO2source by Nissim, Y.I., Gibbons, J.F., Gold, R.B.

“…Nonalloyed ohmic contacts were formed on diffused n + layers in GaAs. These layers were obtained in semi-insulating substrates by a combination of themal and…”
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TP-A5 nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO 2 /SiO 2 source by Nissim, Y.I., Gibbons, J.F., Gold, R.B.

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TP-A5 nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO2/SiO2source by Nissim, Y.I., Gibbons, J.F., Gold, R.B.

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Realisation of silicon based dielectrics anti-resonant reflecting optical waveguide (ARROW) on InP by photochemical deposition by Sayah, A., Nissim, Y.I., Toussaere, E.

“…A basic dielectric waveguide structure (anti-resonant reflexion optical waveguide) has been studied and fabricated directly on InP. The use of photo-assisted…”
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Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma by Lescaut, B., Nissim, Y.I., Bresse, J.F.

“…Stable and optimum characteristics of micro-optoelectronic devices and circuits require the passivation of the free surface of the III-V materials. An…”
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Cubic phase gallium nitride epitaxially formed on GaAs or GaInAs at low temperature with a NH3 DECR plasma by Nissim, Y.I., Lescaut, B., Leprince, L., Patriarche, G., Bresse, J.F.

“…GaN is a compound semiconductor attractive for its blue band gap (3.45 eV) and its large saturated electron drift velocity. Unfortunately, because of its large…”
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Dielectric waveguides fabricated on InP by photochemical process for OEICs by Sayah, A., Nissim, Y.I.

“…A complete Si-based dielectric waveguides technology fabricated on InP substrates has been developed. The lowest attenuation measured at 1.5 /spl mu/m…”
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Thin film dielectric deposition by rapid thermal CVD for InP device applications by Lebland, F., Licoppe, C., Nissim, Y.I.

“…Rapid thermal chemical vapor deposition (CVD) was utilized to deposit silicon-based dielectric on InP at high temperature. Silicon oxynitride films can be…”
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Fabrication of GaAs MESFET's with non-alloyed ohmic contacts by Dobkin, D.M., Gold, R.B., Nissim, Y.I., Gibbons, J.F.

“…Nonalloyed ohmic contacts to GaAs have previously been fabricated by the laser assisted diffusion of tin from a spin-on source. However, the resultant surfaces…”
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