Search Results - "Nishizaki, Shogo"

Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods by Nishizaki, Shogo, Ohdaira, Keisuke, Matsumura, Hideki

“…We investigate the characteristics of amorphous silicon thin film transistors (a-Si TFTs) fabricated by plasma-enhanced chemical vapor deposition (PECVD) and…”
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Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films by Endo, Yohei, Fujiwara, Tomoko, Ohdaira, Keisuke, Nishizaki, Shogo, Nishioka, Kensuke, Matsumura, Hideki

“…We have fabricated thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-µm-thick amorphous Si (a-Si)…”
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Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing by Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Matsumura, Hideki

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Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing by Ohdaira, Keisuke, Shiba, Kazuhiro, Takemoto, Hiroyuki, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Jang, Young Rae, Matsumura, Hideki

“…Amorphous Si (a-Si) films with lower hydrogen contents show better adhesion to glass during flash lamp annealing (FLA). The 2.0 µm-thick a-Si films deposited…”
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Study on Stability of Amorphous Silicon Thin-Film Transistors Prepared by Catalytic Chemical Vapor Deposition by Nishizaki, Shogo, Ohdaira, Keisuke, Matsumura, Hideki

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Advantage of plasma-less deposition in Cat-CVD to the performance of electronic devices by Matsumura, Hideki, Hasegawa, Tomoaki, Nishizaki, Shogo, Ohdaira, Keisuke

“…Advantage of plasma-less deposition in catalytic chemical vapor deposition (Cat-CVD) is demonstrated in performance of amorphous-silicon (a-Si) thin-film…”
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Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrates by Ohdaira, Keisuke, Endo, Yohei, Fujiwara, Tomoko, Nishizaki, Shogo, Matsumura, Hideki

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Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films by Ohdaira, Keisuke, Abe, Yuki, Fukuda, Makoto, Nishizaki, Shogo, Usami, Noritaka, Nakajima, Kazuo, Karasawa, Takeshi, Torikai, Tetsuya, Matsumura, Hideki

“…Polycrystalline silicon (poly-Si) films thicker than 1.5 μm, consisting of dense small grains called nano-grain poly-Si (ngp-Si), are formed by flash lamp…”
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High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 µs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition by Ohdaira, Keisuke, Nishizaki, Shogo, Endo, Yohei, Fujiwara, Tomoko, Usami, Noritaka, Nakajima, Kazuo, Matsumura, Hideki

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Thin film p-i-n poly-Si solar cells directly converted from p-i-n a-Si structures by a single shot of flash lamp by Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Shiba, Kazuhiro, Takemoto, Hiroyuki, Nishizaki, Shogo, Young Rae Jang, Nishioka, Kensuke, Matsumura, Hideki

“…We propose a novel production method to fabricate high-efficiency thin-film poly-Si solar cells using flash lamp annealing (FLA) for crystallization of…”
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