Search Results - "Nishio, Keishi"

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  1. 1

    Continuous Variation of Secondary Structural Contents of Interfacial Peptides Induced by Hydrogel Fusion by Murai, Kazuki, Isobe, Hiroto, Tezuka, Atsuya, Nishio, Keishi

    Published in Langmuir (15-03-2022)
    “…Three-dimensional assemblies formed by multi-biopolymers perform important biological functions by maintaining the vital activities of living organisms through…”
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    Journal Article
  2. 2

    Carrier Generation in p‑Type Wide-Gap Oxide: SnNb2O6 Foordite by Samizo, Akane, Kikuchi, Naoto, Aiura, Yoshihiro, Nishio, Keishi, Mibu, Ko

    Published in Chemistry of materials (27-11-2018)
    “…Wide-gap oxides with their valence band maximum (VBM) composed of s orbitals are essential for realizing practical p-type transparent oxide semiconductors. We…”
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    Journal Article
  3. 3

    Preparation of Pt/WO3-coated polydimethylsiloxane membrane for transparent/flexible hydrogen gas sensors by Ishihara, Ryo, Yamaguchi, Yuki, Tanabe, Kanta, Makino, Yoshihiro, Nishio, Keishi

    Published in Materials chemistry and physics (15-03-2019)
    “…For sustainable hydrogen energy generation systems, safe, repeatable, and cost-effective hydrogen gas-leakage monitoring is required. In this study,…”
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    Journal Article
  4. 4

    Disorders and oxygen vacancies in p‐type Sn2B2O7 (B = Nb, Ta): Role of the B‐site element by Samizo, Akane, Minohara, Makoto, Kikuchi, Naoto, Ando, Kenta, Mazuka, Yuta, Nishio, Keishi

    Published in Journal of the American Ceramic Society (01-02-2023)
    “…Sn2Nb2−xTaxO7 (x = 0.0–2.0) with pyrochlore structure is a promising material for p‐type oxide semiconductors. A systematic study of its Nb/Ta ratio indicated…”
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    Journal Article
  5. 5

    Site-Selective Oxygen Vacancy Formation Derived from the Characteristic Crystal Structures of Sn–Nb Complex Oxides by Samizo, Akane, Minohara, Makoto, Kikuchi, Naoto, Bando, Kyoko K, Aiura, Yoshihiro, Mibu, Ko, Nishio, Keishi

    Published in Journal of physical chemistry. C (12-08-2021)
    “…Divalent tin oxides have attracted considerable attention as novel p-type oxide semiconductors, which are essential for realizing future oxide electronic…”
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    Journal Article
  6. 6

    Fabrication of well-isolated graphene and evaluation of thermoelectric performance of polyaniline–graphene composite film by Ube, Takuji, Koyanagi, Jun, Kosaki, Takahiro, Fujimoto, Kenjiro, Yokozeki, Tomohiro, Ishiguro, Takashi, Nishio, Keishi

    Published in Journal of materials science (01-03-2019)
    “…Camphorsulfonic acid (CSA)-doped polyaniline (PANI) and thermally reduced graphene (TRGO) composite polymer film with high thermoelectric (TE) properties were…”
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    Journal Article
  7. 7

    Electrical and optical properties of wide-gap n-type Sn2Ta2O7 films by Suzuki, Shunichi, Nishio, Keishi, Kikuchi, Naoto

    “…Wide-gap n-type Sn2Ta2O7 polycrystalline films were prepared by RF-magnetron sputtering followed by annealing in a reducing atmosphere (N2). Sn2Ta2O7 is known…”
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  8. 8

    Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7 by Minohara, Makoto, Kikuchi, Naoto, Tsukuda, Kouhei, Dobashi, Yuka, Samizo, Akane, Nishio, Keishi, He, Xinyi, Katase, Takayoshi, Kamiya, Toshio, Aiura, Yoshihiro

    Published in Materials & design (01-04-2022)
    “…[Display omitted] •In doping effect on Bi2Sn2O7 crystal structure and electric properties is verified.•In3+ is substitutionally doped at the Sn4+ sites in…”
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    Journal Article
  9. 9

    Influence of oxygen gas concentration on hydrogen sensing of Pt/WO3 thin film prepared by sol–gel process by Yamaguchi, Yuki, Imamura, Shunji, Ito, Shigeru, Nishio, Keishi, Fujimoto, Kenjiro

    Published in Sensors and actuators. B, Chemical (01-09-2015)
    “…High-performance hydrogen gas sensors are needed to ensure safe use of hydrogen gas as a clean energy resource. Pt catalyst-loaded tungsten oxide (Pt/WO3),…”
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    Journal Article
  10. 10

    Substitutional and interstitial impurity p-type doping of thermoelectric Mg2Si: a theoretical study by Hirayama, Naomi, Iida, Tsutomu, Sakamoto, Mariko, Nishio, Keishi, Hamada, Noriaki

    “…The narrow-gap magnesium silicide semiconductor Mg 2 Si is a promising mid-temperature (600-900 K) thermoelectric material. It intrinsically possesses n-type…”
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    Journal Article
  11. 11

    Pt/WO3 Nanoparticle-Dispersed Polydimethylsiloxane Membranes for Transparent and Flexible Hydrogen Gas Leakage Sensors by Ishihara, Ryo, Makino, Yoshihiro, Yamaguchi, Yuki, Fujimoto, Kenjiro, Nishio, Keishi

    Published in Membranes (Basel) (02-03-2022)
    “…Hydrogen gas is a promising, clean, and highly efficient energy source. However, to use combustible H2 gas safety, high-performance and safe gas leakage…”
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    Journal Article
  12. 12

    Bioinspired mineralization of calcium carbonate in peptide hydrogel acting as a multifunctional three-dimensional template by Murai, Kazuki, Funamizu, Yosuke, Ogura, Toshihiko, Nishio, Keishi

    Published in Journal of Asian Ceramic Societies (03-07-2021)
    “…Biomineralization is the process by which biominerals, minerals composed of bioinorganic matter possessing a controlled structure and orientation and a…”
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  13. 13

    Selection and Evaluation of Thermal Interface Materials for Reduction of the Thermal Contact Resistance of Thermoelectric Generators by Sakamoto, Tatsuya, Iida, Tsutomu, Sekiguchi, Takeshi, Taguchi, Yutaka, Hirayama, Naomi, Nishio, Keishi, Takanashi, Yoshifumi

    Published in Journal of electronic materials (01-10-2014)
    “…A variety of thermal interface materials (TIMs) were investigated to find a suitable TIM for improving the performance of thermoelectric power generators…”
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    Journal Article
  14. 14

    Low-Temperature Spark Plasma Sintering of ZrW2−xMoxO8 Exhibiting Controllable Negative Thermal Expansion by Wei, Hui, Hasegawa, Marin, Mizutani, Shunsuke, Aimi, Akihisa, Fujimoto, Kenjiro, Nishio, Keishi

    Published in Materials (01-09-2018)
    “…Molybdenum-doped zirconium tungstate (ZrW2−xMoxO8) has been widely studied because of its large isotropic coefficient of negative thermal expansion (NTE)…”
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  15. 15

    Fabrication of large sintered pellets of Sb-doped n-type Mg2Si using a plasma activated sintering method by Hayatsu, Yusuke, Iida, Tsutomu, Sakamoto, Tatsuya, Kurosaki, Shota, Nishio, Keishi, Kogo, Yasuo, Takanashi, Yoshifumi

    Published in Journal of solid state chemistry (01-09-2012)
    “…Sb is known to be the most stable n-type dopant in Mg2Si, whereas the reproducibility and sintering scalability of Sb-doped Mg2Si has proved to be difficult…”
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    Journal Article
  16. 16

    In-situ X-ray diffraction study of hydrogen absorption and desorption processes in Pd thin films: Hydrogen composition dependent anisotropic expansion and its quantitative description by Harumoto, Takashi, Ohnishi, Yusuke, Nishio, Keishi, Ishiguro, Takashi, Shi, Ji, Nakamura, Yoshio

    Published in AIP advances (01-06-2017)
    “…The hydrogen absorption/desorption processes of (111)-textured and normal palladium (Pd) thin films of thickness ranging from 8 to 48 nm are investigated using…”
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    Journal Article
  17. 17

    Influence of native defects on structural and electronic properties of magnesium silicide by Hirayama, Naomi, Iida, Tsutomu, Nishio, Keishi, Kogo, Yasuo, Takarabe, Kenji, Hamada, Noriaki

    Published in Japanese Journal of Applied Physics (01-05-2017)
    “…The narrow-gap semiconductor magnesium silicide (Mg2Si) is a promising candidate for mid-temperature (500-800 K) thermoelectric applications. Mg2Si exhibits…”
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    Journal Article
  18. 18

    Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences by Sakamoto, Tatsuya, Iida, Tsutomu, Kurosaki, Shota, Yano, Kenji, Taguchi, Hirohisa, Nishio, Keishi, Takanashi, Yoshifumi

    Published in Journal of electronic materials (01-05-2011)
    “…The thermoelectric (TE) characteristics of Sb- and Al-doped n -type Mg 2 Si elemental devices fabricated using material produced from molten commercial doped…”
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    Journal Article Conference Proceeding
  19. 19

    Thermoelectric properties of Sb-doped Mg2(Si0.95Ge0.05) synthesized by spark plasma sintering by Arai, Koya, Sasaki, Asumi, Kimori, Yuto, Iida, Miharu, Nakamura, Tomoyuki, Yamaguchi, Yuki, Fujimoto, Kenjiro, Tamura, Ryuji, Iida, Tsutomu, Nishio, Keishi

    “…•We have studied influence of Sb-doping and Ge-doping for thermoelectric properties of Mg2Si.•Mg2Si and Sb doped Mg2(Si0.95Ge0.05) were synthesized using spark…”
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    Journal Article
  20. 20

    Improvement of Electrical Contact Between TE Material and Ni Electrode Interfaces by Application of a Buffer Layer by Arai, Koya, Matsubara, Masanori, Sawada, Yukie, Sakamoto, Tatsuya, Kineri, Tohru, Kogo, Yasuo, Iida, Tsutomu, Nishio, Keishi

    Published in Journal of electronic materials (01-06-2012)
    “…A single π-structure thermoelectric (TE) module based on p -type NaCo 2 O 4 , n -type Mg 2 Si, and Ni electrode was fabricated by the spark plasma sintering…”
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    Journal Article Conference Proceeding