Search Results - "Nishimoto, C"

5-100 GHz InP coplanar waveguide MMIC distributed amplifier by Majidi-Ahy, R., Nishimoto, C.K., Riaziat, M., Glenn, M., Silverman, S., Weng, S.-L., Pao, Y.-C., Zdasiuk, G.A., Bandy, S.G., Tan, Z.C.H.

“…A single-stage 5-100-GHz InP MMIC (monolithic microwave integrated circuit) amplifier with an average gain of more than 5.5 dB has been developed. This MMIC…”
Get full text

Saturation velocity determination for In0.53Ga0.47As field-effect transistors by Bandy, S., Nishimoto, C., Hyder, S., Hooper, C.

“…The fabrication of Schottky-gate field-effect transistors (FET’s) on InGaAs lattice matched to InP is reported. A higher band-gap interface layer is used to…”
Get full text

Sensitivity of a 40 GHz HEMT low-noise amplifier to material and processing variations by Yuen, C., Nishimoto, C., Bandy, S., Zdasiuk, G.

“…The design of a monolithic, single-stage low-noise amplifier at 40 GHz for application to satellite communication is presented. The amplifier includes a single…”
Get full text

High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz by Yuen, C., Nishimoto, C., Pao, Y.C., Day, M., Bandy, S., Zdasiuk, G.

“…Ultra-broad-bandwidth distributed amplifiers with cutoff frequencies of 45 and 60 GHz have been developed utilizing 0.25- mu m AlGaAs and InP cascode HEMTs…”
Get full text

100-GHz high-gain InP MMIC cascode amplifier by Majidi-Ahy, R., Nishimoto, C., Riaziat, M., Glenn, M., Silverman, S., Weng, S.-L., Pao, Y.-C., Zdasiuk, G., Bandy, S., Tan, Z.

“…A high-gain InP monolithic millimeter-wave integrated circuit (MMIC) cascode amplifier has been developed which has 8.0 dB of average gain from 75 to 100 GHz…”
Get full text

Impact of surface layer on In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistors by Pao, Y.-C., Nishimoto, C., Riaziat, M., Majidi-Ahy, R., Bechtel, N.G., Harris, J.S.

“…The surface potential of FETs has shown a strong effect on the channel potential and charge control in the channel. A study of the role of undoped versus doped…”
Get full text

INTESTINAL SURGERY. I. SUTURE, INCISION AND EXCISION OF INTESTINES by NISHIMOTO, C

Get more information

Considerations on aseptic technics for operative fields by NISHIMOTO, C

Get more information

Measurement of tritium in tree rings: isolation of α-cellulose from wood chips using explosive depressurization by YAMADA, Y, ITOH, M, KIRIYAMA, N, NISHIMOTO, C, KOMURA, K, UENO, K

Get full text

NOTFET: a high-frequency InP nonlinear transistor by Majidi-Ahy, R., Bandy, S., Ching, L.Y., Glenn, M., Nishimoto, C., Weng, S.L., Zdasiuk, G.

“…A device called the nonlinearly optimized transconductance field-effect transistor (NOTFET) has been developed for nonlinear circuit applications. An InP…”
Get full text

Low-noise microwave field-effect transistors using organometallic GaAs by AEBI, V, BANDY, S, NISHIMOTO, C, ZDASIUK, G

“…The fabrication of low-noise GaAs field-effect transistors on material grown by organometallic vapor phase epitaxy is reported. Detailed descriptions of both…”
Get full text

A 2-20 GHz High-Gain Monolithic HEMT Distributed Amplifier by Bandy, S.G., Nishimoto, C.K., Yuen, C., Larue, R.A., Day, M., Eckstein, J., Tan, Z.C.H., Webb, C., Zdasiuk, G.A.

“…A low-noise 2-21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12+-0.5 dB of gain. This represents the…”
Get full text

The Analgesic Effect of Xenon on the Formalin Test in Rats: A Comparison with Nitrous Oxide by Fukuda, Taeko, Nishimoto, Chikako, Hisano, Setsuji, Miyabe, Masayuki, Toyooka, Hidenori

“…To investigate the analgesic effects of xenon, we performed formalin tests in rats under 0.5 minimum alveolar anesthetic concentration xenon or nitrous oxide…”
Get full text

Submicron GaAs microwave FET's with low parasitic gate and source resistances by Bandy, S.G., Chai, Y.G., Chow, R., Nishimoto, C.K., Zdasiuk, G.

“…The substantial reduction in gate metallization resistance and improvement in performance of submicron-gate GaAs FET's has been achieved by employing a…”
Get full text

Effects of Naloxone on Stress-Induced Analgesia After Hemorrhagic Shock by Fukuda, Taeko, Nishimoto, Chikako, Toyooka, Hidenori

“…To investigate whether endogenous opioids might be involved in the mechanisms that underlie hemorrhagic shock-induced analgesia, formalin tests were performed…”
Get full text

A 2-20 GHz, High-Gain, Monolithic HEMT Distributed Amplifier by Nishimoto, C., LaRue, R., Bandy, S., Day, M., Eckstein, J., Webb, C., Yuen, C., Zdasiuk, G.

“…A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the…”
Get full text

The residual effects of hemorrhagic shock on pain reaction and C-fos expression in rats by FUKUDA, Taeko, NISHIMOTO, Chikako, MIYABE, Masayuki, TOYOOKA, Hidenori

“…To investigate the residual effects of hemorrhagic shock on pain reaction and c-fos expression, we performed formalin tests after hemorrhage and reinfusion in…”
Get full text

The formalin test: Effects of formalin concentration and short-term halothane inhalation by Fukuda, Taeko, Nishimoto, Chikako, Shiga, Yuka, Toyooka, Hidenori

“…Background and Objectives: In order to evaluate the effects of formalin concentration and inhalational anesthetics in formalin tests, we injected 5…”
Get full text

PREOPERATIVE KETAMINE PREVENTED CHRONIC PAIN AFTER BREAST SURGERY IN FEMALE PATIENTS by Nishimoto, C., Yamaguchi, H., Sato, S., Toyooka, H.

Get full text

A 2-20 GHz high-gain monolithic HEMT distributed amplifier by Bandy, S.G., Nishimoto, C.K., Yuen, C., Larue, R.A., Day, M., Eckstein, J., Tan, Z.C.H., Webb, C., Zdasiuk, G.A.

“…A low-noise 2-21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12 ± 0.5 dB of gain. This represents the…”
Get full text