Search Results - "Niquet, Y."

Lasing in strained germanium microbridges by Armand Pilon, F. T., Lyasota, A., Niquet, Y.-M., Reboud, V., Calvo, V., Pauc, N., Widiez, J., Bonzon, C., Hartmann, J. M., Chelnokov, A., Faist, J., Sigg, H.

“…Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and has a favourable band structure,…”
Get full text

A single hole spin with enhanced coherence in natural silicon by Piot, N., Brun, B., Schmitt, V., Zihlmann, S., Michal, V. P., Apra, A., Abadillo-Uriel, J. C., Jehl, X., Bertrand, B., Niebojewski, H., Hutin, L., Vinet, M., Urdampilleta, M., Meunier, T., Niquet, Y.-M., Maurand, R., Franceschi, S. De

“…Semiconductor spin qubits based on spin–orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit…”
Get full text

Topological states in multi-orbital HgTe honeycomb lattices by Beugeling, W., Kalesaki, E., Delerue, C., Niquet, Y.-M., Vanmaekelbergh, D., Smith, C. Morais

“…Research on graphene has revealed remarkable phenomena arising in the honeycomb lattice. However, the quantum spin Hall effect predicted at the K point could…”
Get full text

Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain by Mansir, J, Conti, P, Zeng, Z, Pla, J J, Bertet, P, Swift, M W, Van de Walle, C G, Thewalt, M L W, Sklenard, B, Niquet, Y M, Morton, J J L

“…We experimentally study the coupling of group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts that are linear in…”
Get full text

Electric-field tuning of the valley splitting in silicon corner dots by Ibberson, D. J., Bourdet, L., Abadillo-Uriel, J. C., Ahmed, I., Barraud, S., Calderón, M. J., Niquet, Y.-M., Gonzalez-Zalba, M. F.

“…We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the…”
Get full text

1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications by Gassenq, A., Guilloy, K., Osvaldo Dias, G., Pauc, N., Rouchon, D., Hartmann, J.-M., Widiez, J., Tardif, S., Rieutord, F., Escalante, J., Duchemin, I., Niquet, Y.-M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Reboud, V., Calvo, V.

“…High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific…”
Get full text

Hole weak anti-localization in a strained-Ge surface quantum well by Mizokuchi, R., Torresani, P., Maurand, R., Zeng, Z., Niquet, Y.-M., Myronov, M., De Franceschi, S.

“…We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The…”
Get full text

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction by Bohuslavskyi, H., Kotekar-Patil, D., Maurand, R., Corna, A., Barraud, S., Bourdet, L., Hutin, L., Niquet, Y.-M., Jehl, X., De Franceschi, S., Vinet, M., Sanquer, M.

“…We report on the hole compact double quantum dots fabricated using a conventional CMOS technology. We provide the evidence of Pauli spin blockade in the few…”
Get full text

Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications by Moratis, K., Tan, S. L., Germanis, S., Katsidis, C., Androulidaki, M., Tsagaraki, K., Hatzopoulos, Z., Donatini, F., Cibert, J., Niquet, Y. -M., Mariette, H., Pelekanos, N. T.

“…We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a…”
Get full text

Accurate strain measurements in highly strained Ge microbridges by Gassenq, A., Tardif, S., Guilloy, K., Osvaldo Dias, G., Pauc, N., Duchemin, I., Rouchon, D., Hartmann, J.-M., Widiez, J., Escalante, J., Niquet, Y.-M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Rieutord, F., Reboud, V., Calvo, V.

“…Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at…”
Get full text

Spatially Resolved Decoherence of Donor Spins in Silicon Strained by a Metallic Electrode by Ranjan, V., Albanese, B., Albertinale, E., Billaud, E., Flanigan, D., Pla, J. J., Schenkel, T., Vion, D., Esteve, D., Flurin, E., Morton, J. J. L., Niquet, Y. M., Bertet, P.

“…Electron spins are amongst the most coherent solid-state systems known. However, to be used in devices for quantum sensing and information processing…”
Get full text

Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core–Shell Nanowires on Silicon by Songmuang, R, Giang, Le Thuy Thanh, Bleuse, J, Den Hertog, M, Niquet, Y. M, Dang, Le Si, Mariette, H

“…We present a set of experimental results showing a combination of various effects, that is, surface recombination velocity, surface charge traps, strain, and…”
Get full text

Study of the light emission in Ge layers and strained membranes on Si substrates by Gassenq, A., Guilloy, K., Pauc, N., Hartmann, J.-M., Osvaldo Dias, G., Rouchon, D., Tardif, S., Escalante, J., Duchemin, I., Niquet, Y.-M., Chelnokov, A., Reboud, V., Calvo, Vincent

“…The influence of pattern design and tensile strain on light emission was investigated in Ge layers and suspended membranes. The optical properties were…”
Get full text

Boron and nitrogen codoping effect on transport properties of carbon nanotubes by Zoubkoff, R., Triozon, F., Niquet, Y.-M., Latil, S.

“…This paper reports a theoretical study of the effect of boron and nitrogen codoping on the transport properties of carbon nanotubes (CNTs) at the mesoscopic…”
Get full text

Are Kohn-Sham conductances accurate? by Mera, H, Niquet, Y M

“…We use Fermi-liquid relations to address the accuracy of conductances calculated from the single-particle states of exact Kohn-Sham (KS) density functional…”
Get full text

Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy by Roche, B, Dupont-Ferrier, E, Voisin, B, Cobian, M, Jehl, X, Wacquez, R, Vinet, M, Niquet, Y-M, Sanquer, M

“…We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and…”
Get full text

Radii of Rydberg states of isolated silicon donors by Li, Juerong, Le, Nguyen, Li, K., Clowes, K., Engelkamp, H., Pavlov, S., Hübers, H., Shuman, V., Portsel, L. М., Lodygin, А., Astrov, Yu, Abrosimov, V., Pidgeon, C., Fisher, A., Zeng, Zaiping, Niquet, Y.-M., Murdin, N.

Get full text

Control of the ionization state of three single donor atoms in silicon by Voisin, B., Cobian, M., Jehl, X., Vinet, M., Niquet, Y.-M., Delerue, C., de Franceschi, S., Sanquer, M.

“…By varying the front-gate and the substrate voltages in a short silicon-on-insulator trigate field-effect transistor, we control the ionization state of three…”
Get full text

Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings by Nguyen, V. Hung, Niquet, Y. M., Dollfus, P.

“…We report a numerical study on the Aharonov-Bohm (AB) effect and giant magnetoresistance in rectangular rings made of graphene nanoribbons (GNRs). We show that…”
Get full text

Investigation of lasing in highly strained germanium at the crossover to direct band gap by Armand Pilon, F. T., Niquet, Y-M., Chretien, J., Pauc, N., Reboud, V., Calvo, V., Widiez, J., Hartmann, J. M., Chelnokov, A., Faist, J., Sigg, H.

“…Efficient and cost-effective Si-compatible lasers are a longstanding wish of the optoelectronic industry. Inprinciple, there are two options. For many…”
Get full text