Search Results - "Nikonov, DE"

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  1. 1

    Modeling of Nanoscale Devices by Anantram, M. P., Lundstrom, Mark S., Nikonov, Dmitri E.

    Published in Proceedings of the IEEE (01-09-2008)
    “…We aim to provide engineers with an introduction to the nonequilibrium Green's function (NEGF) approach, which is a powerful conceptual tool and a practical…”
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    Journal Article
  2. 2

    Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs by Koswatta, S.O., Lundstrom, M.S., Nikonov, D.E.

    Published in IEEE transactions on electron devices (01-03-2009)
    “…In this paper, we present a detailed performance comparison between conventional n-i-n MOSFET transistors and tunneling field-effect transistors (TFETs) based…”
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    Journal Article
  3. 3

    Analysis of graphene nanoribbons as a channel material for field-effect transistors by Obradovic, B., Kotlyar, R., Heinz, F., Matagne, P., Rakshit, T., Giles, M. D., Stettler, M. A., Nikonov, D. E.

    Published in Applied physics letters (03-04-2006)
    “…Electronic properties of graphene (carbon) nanoribbons are studied and compared to those of carbon nanotubes. The nanoribbons are found to have qualitatively…”
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    Journal Article
  4. 4

    Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors by Liang, Gengchiau, Neophytou, Neophytos, Nikonov, Dmitri E., Lundstrom, Mark S.

    Published in IEEE transactions on electron devices (01-04-2007)
    “…The upper limit performance potential of ballistic carbon nanoribbon MOSFETs (CNR MOSFETs) is examined. Calculation of the bandstructure of nanoribbons using a…”
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    Journal Article
  5. 5

    Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors by Koswatta, Siyuranga O., Lundstrom, Mark S., Anantram, M. P., Nikonov, Dmitri E.

    Published in Applied physics letters (19-12-2005)
    “…Electronic transport in a carbon nanotube metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the nonequilibrium Green's functions…”
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    Journal Article
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    Efficiency of Spin-Wave Bus for Information Transmission by Khitun, A., Nikonov, D.E., Bao Mingqiang, Galatsis, K., Wang, K.L.

    Published in IEEE transactions on electron devices (01-12-2007)
    “…We compare the transport parameters such as signal attenuation and signal velocity for a spin-wave bus and a conventional electronic transmission line. The…”
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    Journal Article
  11. 11

    Spin gain transistor in ferromagnetic semiconductors-the semiconductor Bloch-equations approach by Nikonov, D.E., Bourianoff, G.I.

    Published in IEEE transactions on nanotechnology (01-03-2005)
    “…A scheme and principle of operation of a "spin gain transistor" are proposed. A large unmagnetized current creates the carrier density sufficient for the…”
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    Journal Article
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    Spintronic majority gates by Radu, I. P., Zografos, O., Vaysset, A., Ciubotaru, F., Yan, J., Swerts, J., Radisic, D., Briggs, B., Soree, B., Manfrini, M., Ercken, M., Wilson, C., Raghavan, P., Sayan, S., Adelmann, C., Thean, A., Amaru, L., Gaillardon, P.-E, De Micheli, G., Nikonov, D. E., Manipatruni, S., Young, I. A.

    “…In this paper we present an overview of two types of majority gate devices based on spintronic phenomena. We compare the spin torque majority gate and the spin…”
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    Conference Proceeding Journal Article
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    Lasing without inversion in Cherenkov free-electron lasers by Nikonov, Dmitri E, Sherman, Boris, Kurizki, Gershon, Scully, Marlan O

    Published in Optics communications (15-01-1996)
    “…Quantum theory is applied to interference of emission and absorption in a two-section Čerenkov free-electron laser (FEL). A scheme for absorption cancellation…”
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    Journal Article
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