Search Results - "Nikonov, D E"

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    Magneto-electric antiferromagnetic spin–orbit logic devices by Dowben, P. A., Nikonov, D. E., Marshall, A., Binek, Ch

    Published in Applied physics letters (24-02-2020)
    “…As electronic integrated circuits are scaled to ever smaller sizes, they run into the obstacle of excessive power dissipation. Spintronic devices hold the…”
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    Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures by Calman, E. V, Fowler-Gerace, L. H, Choksy, D. J, Butov, L. V, Nikonov, D. E, Young, I. A, Hu, S, Mishchenko, A, Geim, A. K

    Published in Nano letters (11-03-2020)
    “…Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively…”
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    Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure by Heron, J T, Trassin, M, Ashraf, K, Gajek, M, He, Q, Yang, S Y, Nikonov, D E, Chu, Y-H, Salahuddin, S, Ramesh, R

    Published in Physical review letters (14-11-2011)
    “…A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic…”
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    Enabling ultra-low-voltage switching in BaTiO3 by Jiang, Y., Parsonnet, E., Qualls, A., Zhao, W., Susarla, S., Pesquera, D., Dasgupta, A., Acharya, M., Zhang, H., Gosavi, T., Lin, C.-C., Nikonov, D. E., Li, H., Young, I. A., Ramesh, R., Martin, L. W.

    Published in Nature materials (01-07-2022)
    “…Single crystals of BaTiO 3 exhibit small switching fields and energies, but thin-film performance is considerably worse, thus precluding their use in…”
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    Analysis of graphene nanoribbons as a channel material for field-effect transistors by Obradovic, B., Kotlyar, R., Heinz, F., Matagne, P., Rakshit, T., Giles, M. D., Stettler, M. A., Nikonov, D. E.

    Published in Applied physics letters (03-04-2006)
    “…Electronic properties of graphene (carbon) nanoribbons are studied and compared to those of carbon nanotubes. The nanoribbons are found to have qualitatively…”
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    Nanoscale domain wall devices with magnetic tunnel junction read and write by Raymenants, E., Bultynck, O., Wan, D., Devolder, T., Garello, K., Souriau, L., Thiam, A., Tsvetanova, D., Canvel, Y., Nikonov, D. E., Young, I. A., Heyns, M., Soree, B., Asselberghs, I., Radu, I., Couet, S., Nguyen, V. D.

    Published in Nature electronics (23-06-2021)
    “…The manipulation of fast domain wall motion in magnetic nanostructures could form the basis of novel magnetic memory and logic devices. However, current…”
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    Indirect Excitons and Trions in MoSe 2 /WSe 2 van der Waals Heterostructures by Calman, E V, Fowler-Gerace, L H, Choksy, D J, Butov, L V, Nikonov, D E, Young, I A, Hu, S, Mishchenko, A, Geim, A K

    Published in Nano letters (11-03-2020)
    “…Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively…”
    Get full text
    Journal Article
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    Modeling of Nanoscale Devices by Anantram, M. P., Lundstrom, Mark S., Nikonov, Dmitri E.

    Published in Proceedings of the IEEE (01-09-2008)
    “…We aim to provide engineers with an introduction to the nonequilibrium Green's function (NEGF) approach, which is a powerful conceptual tool and a practical…”
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    Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs by Koswatta, S.O., Lundstrom, M.S., Nikonov, D.E.

    Published in IEEE transactions on electron devices (01-03-2009)
    “…In this paper, we present a detailed performance comparison between conventional n-i-n MOSFET transistors and tunneling field-effect transistors (TFETs) based…”
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  13. 13

    Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors by Liang, Gengchiau, Neophytou, Neophytos, Nikonov, Dmitri E., Lundstrom, Mark S.

    Published in IEEE transactions on electron devices (01-04-2007)
    “…The upper limit performance potential of ballistic carbon nanoribbon MOSFETs (CNR MOSFETs) is examined. Calculation of the bandstructure of nanoribbons using a…”
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    Efficiency of Spin-Wave Bus for Information Transmission by Khitun, A., Nikonov, D.E., Bao Mingqiang, Galatsis, K., Wang, K.L.

    Published in IEEE transactions on electron devices (01-12-2007)
    “…We compare the transport parameters such as signal attenuation and signal velocity for a spin-wave bus and a conventional electronic transmission line. The…”
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    Spin gain transistor in ferromagnetic semiconductors-the semiconductor Bloch-equations approach by Nikonov, D.E., Bourianoff, G.I.

    Published in IEEE transactions on nanotechnology (01-03-2005)
    “…A scheme and principle of operation of a "spin gain transistor" are proposed. A large unmagnetized current creates the carrier density sufficient for the…”
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    Modeling and Design of Spintronic Integrated Circuits by Manipatruni, S., Nikonov, D. E., Young, I. A.

    “…We present a theoretical and a numerical formalism for analysis and design of spintronic integrated circuits (SPINICs). The formalism encompasses a generalized…”
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    Exciton gas transport through nano-constrictions by Xu, Chao, Leonard, J. R, Dorow, C. J, Butov, L. V, Fogler, M. M, Nikonov, D. E, Young, I. A

    Published 25-06-2019
    “…An indirect exciton is a bound state of an electron and a hole in spatially separated layers. Two-dimensional indirect excitons can be created optically in…”
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    Proposal of a Spin Torque Majority Gate Logic by Nikonov, D. E., Bourianoff, G. I., Ghani, T.

    Published in IEEE electron device letters (01-08-2011)
    “…A spin-based logic device is proposed. It is comprised of a common free ferromagnetic layer and four discrete ferromagnetic nanopillars, each containing an…”
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    Enabling ultra-low-voltage switching in BaTiO 3 by Jiang, Y, Parsonnet, E, Qualls, A, Zhao, W, Susarla, S, Pesquera, D, Dasgupta, A, Acharya, M, Zhang, H, Gosavi, T, Lin, C-C, Nikonov, D E, Li, H, Young, I A, Ramesh, R, Martin, L W

    Published in Nature materials (26-05-2022)
    “…Single crystals of BaTiO exhibit small switching fields and energies, but thin-film performance is considerably worse, thus precluding their use in…”
    Get full text
    Journal Article
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