Search Results - "Nikolaev, D. N."

Photoluminescence Study of AlGaAs/GaAs after Focused Ion Beam Milling by Voznyuk, G. V., Grigorenko, I. N., Mitrofanov, M. I., Nikolaev, D. N., Mizerov, M. N., Evtikhiev, V. P.

“…Light-emitting devices of modern photonics are based on the semiconductor structures containing layers with various physical parameters. To preserve initial…”
Get full text

Spectroscopic Studies of Integrated GaAs/Si Heterostructures by Seredin, P. V., Goloshchapov, D. L., Arsentyev, I. N., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O.

“…The purpose of the study is to investigate the effect of a new type of compliant substrates based on an AlGaAs superstructure layer (SL) and a protoporous Si…”
Get full text

Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide by Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Rudova, N. A., Bakhvalov, K. V., Lutetskiy, A. V., Kapitonov, V. A., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

“…The emission characteristics of narrow mesa-stripe (5 . 5 μm) lasers based on asymmetric AlGaAs/GaAs heterostructures are studied. It is shown that the maximum…”
Get full text

Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon by Seredin, P. V., Goloshchapov, D. L., Khudyakov, Yu. Yu, Arsentyev, I. N., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O., Leiste, Harald

“…The purpose of the study is to investigate the effect of a new type of compliant substrate based on an AlGaAs superstructure layer (SL) and a protoporous Si…”
Get full text

High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence by Slipchenko, S. O., Podoskin, A. A., Nikolaev, D. N., Shamakhov, V. V., Shashkin, I. S., Kondratov, M. I., Gordeev, I. N., Grishin, A. E., Kazakova, A. E., Gavrina, P. S., Bakhvalov, K. V., Kop’ev, P. S., Pikhtin, N. A.

“…The effect of the active region design on the vertical far-field divergence is studied for high-power laser diodes based on asymmetric heterostructures with a…”
Get full text

Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide by Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Veselov, D. A., Rudova, N. A., Bakhvalov, K. V., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

“…The emission characteristics of single-mode lasers based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide are studied. It is shown that using…”
Get full text

Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure by Levitskii, I. V., Mitrofanov, M. I., Voznyuk, G. V., Nikolaev, D. N., Mizerov, M. N., Evtikhiev, V. P.

“…We present results of experiments concerning the loss of internal quantum efficiency of the GaAs/AlGaAs heterostructure due to the focused ion beam-induced…”
Get full text

Equation of State of Iron Oxide at a Pressure ≤1 TPa by Nikolaev, D. N., Lomonosov, I. V.

“…The thermophysical properties of shock-compressed porous iron oxide at pressures up to 1 TPa were determined for the first time. The results agree well with…”
Get full text

High peak optical power of 1ns pulse duration from laser diodes – low voltage thyristor vertical stack by Slipchenko, S. O., Podoskin, A. A., Golovin, V. S., Romanovich, D. N., Shamakhov, V. V., Nikolaev, D. N., Shashkin, I. S., Pikhtin, N. A., Bagaev, T. A., Ladugin, M. A., Marmalyuk, A. A., Simakov, V. A.

Get full text

On the Effect of Etching with a Focused Ga+ Ion Beam in the Energy Range 12–30 keV on the Luminescent Properties of the Al0.18Ga0.82As/GaAs/Al0.18Ga0.82As Heterostructure by Voznyuk, G. V., Grigorenko, I. N., Lila, A. S., Mitrofanov, M. I., Nikolaev, D. N., Evtikhiev, V. P.

“…The effect of ion energy in a focused ion beam in the range 12–30 keV on the formation depth of nonradiative recombination centers during etching of the Al 0 …”
Get full text

Shock Compressibility of Single-Crystal Silicon in the Pressure Range 280–510 GPa by Nikolaev, D. N., Kulish, M. I., Dudin, S. V., Mintsev, V. B., Lomonosov, I. V., Fortov, V. E.

“…The shock compressibility of single-crystal silicon is experimentally studied in the pressure range of 280 to 510 GPa. Shock waves are created using Mach’s…”
Get full text

Silicon Radiation at a Shock Compression Pressure of 68 GPa and During Unloading into a Vacuum by Kulish, M. I., Mintsev, V. B., Dudin, S. V., Nikolaev, D. N., Lomonosov, I. V., Fortov, V. E.

“…In this study, the brightness temperatures of silicon shock-compressed to a pressure of P = 68 GPa and the evolution of its temperature during unloading are…”
Get full text

Synthesis of substituted imidazole-4,5-dicarboxylic acids by Brusina, M. A., Nikolaev, D. N., Piotrovskiy, L. B.

“…The review summarizes literature data on various approaches to the synthesis of substituted imidazole-4,5-dicarboxylic acids ranging from assembly from…”
Get full text

Measurements of the Transmission of Silicon Under the Effect of the Radiation of Intense Shock Waves in Xenon by Kulish, M. I., Mintsev, V. B., Dudin, S. V., Nikolaev, D. N., Lomonosov, I. V., Fortov, V. E.

“…The transmittance coefficient of silicon samples exposed to radiation of intense shock waves in xenon is measured. Shock waves are generated using the energy…”
Get full text

Measurement of dense plasma temperature of the shock‐compressed silicon by Nikolaev, D.N., Kulish, M.I., Dudin, S.V., Mintsev, V.B., Lomonosov, I.V., Fortov, V.E.

“…Measurements of the brightness temperature and compressibility of a dense silicon plasma formed by powerful shock waves (SWs) passing through a single‐crystal…”
Get full text

Measurement of the Hugoniot Elastic Limit in Ideal Ceramics by Shevchenko, V. Ya, Oryshchenko, A. S., Lepin, V. N., Lushnikov, A. V., Aldoshin, S. M., Perevislov, S. N., Lomonosov, I. V., Savinykh, A. S., Garkushin, G. V., Razorenov, S. V., Mochalova, V. M., Utkin, A. V., Nikolaev, D. N., Mintsev, V. B.

“…For the first time, a new ceramic “Ideal,” a diamond-silicon carbide composite obtained in the reaction-diffusion Turing process, which makes it possible to…”
Get full text

Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures by Seredin, P.V., Lenshin, A.S., Zolotukhin, D.S., Arsentyev, I.N., Nikolaev, D.N., Zhabotinskiy, A.V.

“…This is the first report of the control of the structural and optical functional characteristics of integrated GaAs/Si(001) heterostructures due to the use of…”
Get full text

Synthesis of fullerene C60 monoadducts. Cyclopropanation of C60 with sulfonium ylides by Nikolaev, D. N., Davidovich, P. B., Piotrovskii, L. B.

“…3′ H -Cyclopropa[1,9](C 60 - I h )[5,6]fullerene-3′-carboxylic acid can be synthesized in a good yield by cyclopropanation of fullerene C 60 with 2-(dimethyl-λ…”
Get full text

Unexpected formation of imidazole-4,5-dicarboxylic acid in the oxidation of 2-substituted benzimidazoles with hydrogen peroxide by Brusina, M. A., Nikolaev, D. N., Ramsh, S. M., Piotrovskii, L. B.

Get full text

High‐explosive generators of dense low‐temperature plasma for proton radiography by Mintsev, V.B., Shilkin, N.S., Ternovoi, V.Ya, Nikolaev, D.N., Yuriev, D.S., Golubev, A.A., Kantsyrev, A.V., Skobliakov, A.V., Bogdanov, A.V., Varentsov, D.V., Hoffmann, D.H.H.

“…The article reviews the design and physical applications of high‐explosive generators for dense low‐temperature plasma. The PUMA proton microscope with…”
Get full text