Search Results - "Nikiforov, A.Y"

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  1. 1

    An Application of AC Glow Discharge Stabilized by Fast Air Flow for Water Treatment by Nikiforov, A.Y.

    Published in IEEE transactions on plasma science (01-06-2009)
    “…A scheme for a plasma-solution reactor on the basis of a glow discharge stabilized by a fast air flow is suggested as a novel water treatment technique. The…”
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    Journal Article
  2. 2

    DC–DC's total ionizing dose hardness decrease in passive reserve mode by Kessarinskiy, L.N., Borisov, A.Y., Boychenko, D.V., Nikiforov, A.Y.

    Published in Microelectronics and reliability (01-08-2015)
    “…The usual and effective way to increase on-board electronics reliability and general radiation hardness is the usage of “sleeping” (shutdown) mode and…”
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    Journal Article
  3. 3

    Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment by Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

    Published in IEEE transactions on nuclear science (01-08-2006)
    “…A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high…”
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    Journal Article
  4. 4

    Nonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring by Bogdanov, Yu. I., Bogdanova, N. A., Fastovets, D. V., Moskovskaya, Y. M., Sogojan, A. V., Nikiforov, A.Y.

    “…Nonparametric statistical criteria usage has been considered for estimating radiation hardness threshold variation of CMOS IC wafer lots series. It gives one…”
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    Conference Proceeding
  5. 5

    Influence of temperature on dose rate laser simulation adequacy by Skorobogatov, P.K., Nikiforov, A.Y., Demidov, A.A., Levin, V.V.

    Published in IEEE transactions on nuclear science (01-12-2000)
    “…Temperature dependence of the equivalent dose rate in silicon integrated circuits (IC's) under 1.06 /spl mu/m laser irradiation is investigated. 2D-numerical…”
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    Journal Article
  6. 6

    Integrating analog-to-digital converter radiation hardness test technique and results by Kalashnikov, O.A., Demidov, A.A., Figurov, V.S., Nikiforov, A.Y., Polevich, S.A., Telets, V.A., Maljudin, S.A., Artamonov, A.S.

    Published in IEEE transactions on nuclear science (01-12-1998)
    “…The integrating ADC CMOS IC radiation hardness tests were performed. Dose rate, total dose and structural damage test techniques and results are presented and…”
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    Journal Article
  7. 7

    The radiation test based assessment of process quality and reliability for conventional 65-nm CMOS technology by Kessarinskiy, L.N., Davydov, G.G., Boychenko, D.V., Artamonov, A.S., Nikiforov, A.Y., Yashanin, I.B.

    Published in Microelectronics and reliability (01-09-2016)
    “…This work presents a solution for radiation hardness assessment using compact and productive X-ray facilities, as well as the automated measurement system. The…”
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    Journal Article
  8. 8

    CMOS/SOS RAM transient radiation upset and "inversion" effect investigation by Nikiforov, A.Y., Poljakov, I.V.

    Published in IEEE transactions on nuclear science (01-12-1996)
    “…The Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) transient upset and "inversion" effect were investigated…”
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    Journal Article
  9. 9

    A way to improve dose rate laser simulation adequacy [Si ICs] by Skorobogatov, P.K., Nikiforov, A.Y., Demidov, A.A.

    Published in IEEE transactions on nuclear science (01-12-1998)
    “…A method for improving laser simulation of dose rate radiation in silicon ICs is analyzed based on the application of noncoherent laser radiation. Experimental…”
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    Journal Article
  10. 10

    Single event latchup threshold estimation based on laser dose rate test results by Chumakov, A.I., Egorov, A.N., Mavritsky, O.B., Nikiforov, A.Y., Yanenko, A.V.

    Published in IEEE transactions on nuclear science (01-12-1997)
    “…Single event latchup is one of the dominant CMOS IC failure effects in the space environment. Latchup comparative experimental and software simulation research…”
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    Journal Article
  11. 11

    Dose rate laser simulation tests adequacy: shadowing and high intensity effects analysis by Nikiforov, A.Y., Skorobogatov, P.K.

    Published in IEEE transactions on nuclear science (01-12-1996)
    “…The adequacy of laser based simulation of the flash X-ray effects in microcircuits may be corrupted mainly due to laser radiation shadowing by the…”
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    Journal Article
  12. 12

    IC’s radiation effects modeling and estimation by Belyakov, V.V, Chumakov, A.I, Nikiforov, A.Y, Pershenkov, V.S, Skorobogatov, P.K, Sogoyan, A.V

    Published in Microelectronics and reliability (01-12-2000)
    “…The approach for IC's radiation hardness estimation and fault prediction is presented in this paper. It is based on the implementation of low-energy laboratory…”
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    Journal Article
  13. 13

    Test CMOS/SOS RAM for transient radiation upset comparative research and failure analysis by Nikiforov, A.Y., Poljakov, I.V.

    Published in IEEE transactions on nuclear science (01-12-1995)
    “…The test Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) with eight types of memory cells was designed and…”
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    Journal Article
  14. 14

    Radiation effects in ultraviolet sensors based on natural diamond by Gromov, D.V., Figurov, V.S., Kvaskov, V.B., Maltsev, P.P., Nikiforov, A.Y., Telets, V.A.

    Published in IEEE transactions on nuclear science (01-12-1998)
    “…Total dose and dose rate effects are investigated in ultraviolet sensors based on natural diamond with various concentrations of nitrogen impurity. Transient…”
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    Journal Article
  15. 15

    Radiation effects in piezoelectric sensor by Boychenko, D.V., Nikiforov, A.Y., Skorobogatov, P.K., Sogoyan, A.V.

    “…These Total dose effects in piezoelectric sensor PKGS-90LC-R are investigated. Experimental results comply with the supposition about accumulation of…”
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    Conference Proceeding
  16. 16

    Effect of electron traps on reversibility of annealing by Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Nikiforov, A.Y., Sogoyan, A.V., Ulimov, V.N., Emelianov, V.V.

    Published in IEEE transactions on nuclear science (01-12-1995)
    “…The kinetics of rechargable radiation induced electron traps build-up in MOSFETs is investigated. The recharge of these traps is responsible for the threshold…”
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    Journal Article
  17. 17

    Interface trap model for the low-dose-rate effect in bipolar devices by Pershenkov, V.S., Chumakov, K.A., Nikiforov, A.Y., Chumakov, A.I., Ulimov, V.N., Romanenko, A.A.

    “…It is shown that the gain degradation of NPN and PNP bipolar transistors at low-dose-rate irradiation basically connects with radiation-induced interface traps…”
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    Conference Proceeding
  18. 18

    Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment by Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

    “…A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high…”
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    Conference Proceeding
  19. 19

    PRIVET-A Heavy Ion Induced Single Event Upset Rate Simulator in Space Environment by Zebrev, G.I., Ladanov, I.A., Nikiforov, A.Y., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

    “…New simulator for heavy ion induced single event upset rate computation for space environment has been developed. Computation method is based on a new general…”
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    Conference Proceeding
  20. 20

    Radiation effects in resonance-tunnel diode structures by Gromov, D.V., Elesin, V.V., Maltcev, P.P., Nikiforov, A.Y., Polunin, V.A.

    “…Transient and structural damage effects in resonance-tunnel diode (RTD) structures are investigated under /sup 60/Co and pulsed laser influences. It was found…”
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    Conference Proceeding