Search Results - "Niikura, C"

The g-values of defects in hydrogenated microcrystalline silicon by Morigaki, K., Niikura, C.

“…The anisotropic g-values of defects in hydrogenated microcrystalline silicon prepared by hot-wire chemical vapour deposition have been measured as a function…”
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Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD by Niikura, C., Kim, S.Y., Drévillon, B., Poissant, Y., Roca i Cabarrocas, P., Bourée, J.E.

“…Silicon–hydrogen bonding configurations, during or after microcrystalline silicon (μc-Si:H) film deposition by catalytic CVD, have been investigated for the…”
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Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate by Niikura, C, Brenot, R, Guillet, J, Bourée, J.E, Kleider, J.P, Brüggemann, R, Longeaud, C

“…The structural and electronic properties of undoped microcrystalline silicon ( μc-Si:H) thin films prepared by hot-wire chemical vapor deposition (HWCVD) at…”
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Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous silicon by Morigaki, K, Niikura, C, Bourée, J.E, Equer, B

“…Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous silicon have been observed in electron spin resonance spectra. The nature of…”
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Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition by Brüggemann, R, Kleider, J.P, Longeaud, C, Mencaraglia, D, Guillet, J, Bourée, J.E, Niikura, C

“…A transition from amorphous to microcrystalline silicon occurs in hot-wire chemical vapour deposition silicon films with increasing dilution of silane with…”
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Transport properties of hot-wire CVD μc-Si:H layers for solar cells by Niikura, C, Poissant, Y, Gueunier, M.E, Kleider, J.P, Bourée, J.E

“…Transport properties of microcrystalline silicon (μc-Si:H) films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) have been investigated by…”
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FTIR phase-modulated ellipsometry measurements of microcrystalline silicon films deposited by hot-wire CVD by Garcia-Caurel, E, Niikura, C, Kim, S.Y, Drévillon, B, Bourée, J.E

“…A series of thin silicon films has been prepared by hot-wire CVD (HWCVD), varying the dilution of silane SiH 4 in hydrogen H 2, defined as the flow ratio [H…”
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Microcrystalline silicon deposited by the hot-wire CVD technique by Guillet, J, Niikura, C, Bourée, J.E, Kleider, J.P, Longeaud, C, Brüggemann, R

“…Hot-wire chemical vapour deposition (HW-CVD) is a well-known technique to deposit amorphous silicon with high deposition rates from the decomposition of silane…”
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Crucial processing steps for microcrystalline silicon bottom cells by Kondo, M., Matsui, T., Nasuno, Y., Niikura, C., Fujibayashi, T., Sato, A., Matsuda, A., Fujiwara, H.

“…In the device processing of microcrystalline silicon bottom cells, a variety of processing steps determining not only the material properties but also the…”
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Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition by Niikura, C, Guillet, J, Brenot, R, Equer, B, Bourée, J.E, Voz, C, Peiro, D, Asensi, J.M, Bertomeu, J, Andreu, J

“…A comparison of structural, optical and electronic properties between undoped hydrogenated microcrystalline silicon films deposited by hot-wire chemical vapor…”
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Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasma by Niikura, Chisato, Kondo, Michio, Matsuda, Akihisa

“…We have developed a novel technique for large-area high-rate-growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a…”
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Report of the Conference on Psychosomatic Disorders in Obstetrical and Gynecological Patients by Niikura, C

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High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma by NIIKURA, Chisato, ITAGAKI, Naho, KONDO, Michio, KAWAI, Yoshinobu, MATSUDA, Akihisa

“…We developed a novel technique for high-rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode…”
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Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition by Masuda, Atsushi, Niikura, Chisato, Ishibashi, Yoriko, Matsumura, Hideki

“…It is found that one of the dominant parameters in determining the dangling-bond (DB) density in hydrogenated amorphous silicon (a-Si:H) films prepared by…”
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Structural and electrical anisotropy and high absorption in poly-Si films prepared by catalytic chemical vapor deposition by Masuda, Atsushi, Iiduka, Ritsuko, Heya, Akira, Niikura, Chisato, Matsumura, Hideki

“…Structural, electrical and optical properties of polycrystalline Si (poly-Si) films prepared by catalytic chemical vapor deposition (cat-CVD) method, often…”
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Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous silicon by MORIGAKI, K, NIIKURA, C, BOUREE, J. E, EQUER, B

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Transport properties of hot-wire CVD μc-Si:H layers for solar cells by NIIKURA, C, POISSANT, Y, GUEUNIER, M. E, KLEIDER, J. P, BOUREE, J. E

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FTIR phase-modulated ellipsometry measurements of microcrystalline silicon films deposited by hot-wire CVD by GARCIA-CAUREL, E, NIIKURA, C, KIM, S. Y, DREVILLON, B, BOUREE, J. E

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Structural and electrical anisotropy and high absorption in poly-Si films prepared by catalytic chemical vapor deposition by MASUDA, A, IIDUKA, R, HEYA, A, NIIKURA, C, MATSUMURA, H

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Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition by BRÜGGEMANN, R, KLEIDER, J. P, LONGEAUD, C, MENCARAGLIA, D, GUILLET, J, BOUREE, J. E, NIIKURA, C

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