Search Results - "Nicklaw, C.J."

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices by Fleetwood, D.M., Xiong, H.D., Lu, Z.-Y., Nicklaw, C.J., Felix, J.A., Schrimpf, R.D., Pantelides, S.T.

“…Capture cross-section data from the literature and recent density-functional theory (DFT) calculations strongly suggest that the 1/f noise of MOS devices is…”
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The structure, properties, and dynamics of oxygen vacancies in amorphous SiO/sub 2 by Nicklaw, C.J., Lu, Z.-Y., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.T.

“…Analysis of a random population of oxygen vacancies in several amorphous SiO/sub 2/ structures, using first-principles calculations, shows that a distribution…”
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A hydrogen-transport-based interface-trap-generation model for hot-carrier reliability prediction by Pagey, M.P., Schrimpf, R.D., Galloway, K.F., Nicklaw, C.J., Ikeda, S., Kamohara, S.

“…Hot-carrier-induced interface-trap generation in n-channel MOSFETs is known to be related to hydrogen-mediated processes. We present a model for interface-trap…”
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The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 by Nicklaw, C.J, Lu, Z.-Y, Fleetwood, D.M, Schrimpf, R.D, Pantelides, S.T

“…Analysis of a random population of oxygen vacancies in several amorphous SiO2 structures, using first-principles calculations, shows that a distribution of…”
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Defects and nanocrystals generated by Si implantation into a-SiO 2 by Nicklaw, C.J, Pagey, M.P, Pantelides, S.T, Fleetwood, D.M, Schrimpf, R.D, Galloway, K.F, Wittig, J.E, Howard, B.M, Taw, E, McNeil, W.H, Conley, J.F

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Defects and nanocrystals generated by Si implantation into a-SiO/sub 2 by Nicklaw, C.J., Pagey, M.P., Pantelides, S.T., Fleetwood, D.M., Schrimpf, R.D., Galloway, K.F., Wittig, J.E., Howard, B.M., Taw, E., McNeil, W.H., Conley, J.F.

“…Electrical charge-trapping characteristics have been studied in thermal oxides that were implanted with Si, experimentally using electron spin resonance (ESR),…”
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TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs by Milanowski, R.J., Pagey, M.P., Massengill, L.W., Schrimpf, R.D., Wood, M.E., Offord, B.W., Graves, R.J., Galloway, K.F., Nicklaw, C.J., Kelley, E.P.

“…Enhanced back-channel leakage in a mesa SOI device architecture is analyzed. Using integrated process, device, and hole trapping simulation, the cause of the…”
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