Search Results - "Nichols, K.B."

Changes in gut microbial metagenomic pathways associated with clinical outcomes after the elimination of malabsorbed sugars in an IBS cohort by Mack, A, Bobardt, J S, Haß, A, Nichols, K B, Schmid, R M, Stein-Thoeringer, C K

“…Specific diets to manage sugar malabsorption are reported to reduce clinical symptoms of irritable bowel syndrome (IBS). However, the effects of diets for…”
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9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates by Chu, K.K., Chao, P.C., Pizzella, M.T., Actis, R., Meharry, D.E., Nichols, K.B., Vaudo, R.P., Xu, X., Flynn, J.S., Dion, J., Brandes, G.R.

“…High power microwave AlGaN-GaN high electron-mobility transistors (HEMTs) on free-standing GaN substrates are demonstrated for the first time. Measured gate…”
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Lactose drives Enterococcus expansion to promote graft-versus-host disease by Stein-Thoeringer, C K, Nichols, K B, Lazrak, A, Docampo, M D, Slingerland, A E, Slingerland, J B, Clurman, A G, Armijo, G, Gomes, A L C, Shono, Y, Staffas, A, Burgos da Silva, M, Devlin, S M, Markey, K A, Bajic, D, Pinedo, R, Tsakmaklis, A, Littmann, E R, Pastore, A, Taur, Y, Monette, S, Arcila, M E, Pickard, A J, Maloy, M, Wright, R J, Amoretti, L A, Fontana, E, Pham, D, Jamal, M A, Weber, D, Sung, A D, Hashimoto, D, Scheid, C, Xavier, J B, Messina, J A, Romero, K, Lew, M, Bush, A, Bohannon, L, Hayasaka, K, Hasegawa, Y, Vehreschild, M J G T, Cross, J R, Ponce, D M, Perales, M A, Giralt, S A, Jenq, R R, Teshima, T, Holler, E, Chao, N J, Pamer, E G, Peled, J U, van den Brink, M R M

“…Disruption of intestinal microbial communities appears to underlie many human illnesses, but the mechanisms that promote this dysbiosis and its adverse…”
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Optical heterodyne detection and microwave rectification up to 26 GHz using quantum well infrared photodetectors by Liu, H.C., Jenkins, G.E., Brown, E.R., McIntosh, K.A., Nichols, K.B., Manfra, M.J.

“…We have demonstrated heterodyne detection up to an intermediate frequency of 26.5 GHz using quantum well infrared photodetectors. A CO/sub 2/ laser and a…”
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Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's by Hwang, K.C., Chao, P.C., Creamer, C., Nichols, K.B., Wang, S., Tu, D., Kong, W., Dugas, D., Patton, G.

“…We report the first demonstration of W-band metamorphic HEMTs/LNA MMICs using an AlGaAsSb lattice strain relief buffer layer on a GaAs substrate. 0.1×50 μm…”
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Product line selection and pricing analysis: Impact of genetic relaxations by Nichols, K.B., Venkataramanan, M.A., Ernstberger, K.W.

“…A model for the product line selection and pricing problem (PLSP) is presented andthree solution procedures based on a genetic algorithm are developed to…”
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Changes in gut microbial metagenomic pathways associated with clinical outcomes after the elimination of malabsorbed sugars in an IBS cohort by Mack, A., Bobardt, J.S., Haß, A., Nichols, K.B., Schmid, R.M., Stein-Thoeringer, C.K.

“…Specific diets to manage sugar malabsorption are reported to reduce clinical symptoms of irritable bowel syndrome (IBS). However, the effects of diets for…”
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Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator by Chen, C.L., Mahoney, L.J., Nichols, K.B., Brown, E.R., Gramstorff, B.F.

“…A new p-channel GaAs metal-insulator-semiconductor field-effect transistor (MISFET) using low-temperature-grown (LTG) GaAs as the gate insulator is…”
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High-performance 0.15-/spl mu/m-gate-length pHEMTs enhanced with a low-temperature-grown GaAs buffer by Actis, R., Nichols, K.B., Kopp, W.F., Rogers, T.J., Smith, F.W.

“…An improved GaAs power pHEMT is presented. The device utilizes a low-temperature-grown (LTG) GaAs buffer layer instead of the conventional-buffer layers…”
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Self-aligned GaAs MISFET's with a low-temperature-grown GaAs gate insulator by Chen, C.L., Mahoney, L.J., Nichols, K.B., Manfra, M.J., Gramstorff, B.F., Molvar, K.M., Murphy, R.A., Brown, E.R.

“…GaAs MISFET's with a low-temperature-grown (LTG) GaAs gate insulator and ion-implanted self-aligned source and drain n/sup +/ regions are demonstrated. The…”
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20 GHz high-efficiency power amplifiers using monolithic multi-cell permeable base transistors by Actis, R., Nichols, K.B., Chick, R.W., McMorran, R.A.

“…The performance at 20 GHz of high-efficiency power amplifiers using a novel class of GaAs permeable base transistors (PBTs) is described. These devices utilize…”
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GaAs permeable base transistors fabricated with 240-mm-periodicity tungsten base gratings by Nichols, K.B., Mathews, R.H., Hollis, M.A., Bozler, C.O., Vera, A., Murphy, R.A.

“…The microwave performance of the first GaAs permeable base transistors (PBTs) fabricated with 240-nm-periodicity tungsten base gratings is described. These…”
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A gallium arsenide overlapping-gate charge-coupled device by Nichols, K.B., Burke, B.E.

“…We have developed a new CCD fabrication process for producing an overlapping gate structure which permits submicrometer control of the gap size while using…”
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High frequency quantum well infrared photodetector by Liu, H.C., Jenskins, G.E., Brown, E.R., McIntosh, K.A., Nichols, K.B., Manfra, M.J.

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The Monolithic Optoelectronic Transistor by Aull, B.F., Brown, E.R., Maki, P.A., Mehanian, C., Nichols, K.B., Palmateer, S.C.

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IIIA-5 spatial light modulators using charge-coupled device addressing and electroabsorption effects in multiple quantum wells by Nichols, K.B., Burke, B.E., Aull, B.F., Goodhue, W.D., Gramstorff, B.F., Hoyt, C.D., Vera, A.

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IIIA-7 GaAs permeable base transistors fabricated using organometallic chemical vapor deposition by Nichols, K.B., Gale, R.P., Hollis, M.A., Lincoln, G.A., Bozler, C.O.

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22 GHz performance of the permeable base transistor by Kushner, L.J., Hollis, M.A., Mathews, R.H., Nichols, K.B., Bozler, C.O.

“…Small-signal performance and power performance of GaAs permeable-base transistors (PBTs) at 22 GHz are reported. A small-signal gain of 14.5 dB was…”
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Small-signal gain performance of the permeable base transistor at EHF by Actis, R., Chick, R.W., Hollis, M.A., Clifton, B.J., Nichols, K.B., Bozler, C.O.

“…The small-signal amplifier performance at 40.5 GHz is reported for a GaAs permeable base transistor (PBT) having a base grating of 3200-Å periodicity and 1-mm…”
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18.5-dB Gain at 18 GHz with a GaAs permeable base transistor by Bozler, C.O., Hollis, M.A., Nichols, K.B., Rabe, S., Vera, A., Chen, C.L.

“…Permeable base transistors have recently been fabricated using organometallic chemical vapor deposition (OMCVD) with a gain of 18.5 dB at 18 GHz. This…”
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