Search Results - "Nian, Laixia"
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Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films
Published in Micromachines (Basel) (27-02-2023)“…Piezoelectric aluminum nitride (AlN) thin film, as a commonly used material for high-frequency acoustic resonators, has been a research hotspot in the RF…”
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Design, Fabrication, and Characterization of Aluminum Scandium Nitride-Based Thin Film Bulk Acoustic Wave Filter
Published in Journal of microelectromechanical systems (01-06-2023)“…The demand for filters with a large fractional bandwidth, up to 5%, still puts a great challenge to the typical aluminum nitride (AlN) thin films-based bulk…”
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3
Review of Optical Designs for Light-Emitting Diode Packaging
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-04-2019)“…In recent years, light-emitting diodes (LEDs) have attracted tremendous attention for their excellent performances of increased luminous efficiency and…”
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Demonstration of Thin Film Bulk Acoustic Resonator Based on AlN/AlScN Composite Film with a Feasible Keff2
Published in Micromachines (Basel) (22-11-2022)“…Film bulk acoustic resonators (FBARs) with a desired effective electromechanical coupling coefficient (Keff2) are essential for designing filter devices. Using…”
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Demonstration of Thin Film Bulk Acoustic Resonator Based on AlN/AlScN Composite Film with a Feasible K[sub.eff][sup.2]
Published in Micromachines (Basel) (01-11-2022)“…Film bulk acoustic resonators (FBARs) with a desired effective electromechanical coupling coefficient (K[sub.eff] [sup.2]) are essential for designing filter…”
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Journal Article -
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Demonstration of Thin Film Bulk Acoustic Resonator Based on AlN/AlScN Composite Film with a Feasible
Published in Micromachines (Basel) (01-11-2022)“…Film bulk acoustic resonators (FBARs) with a desired effective electromechanical coupling coefficient ( Keff2 ) are essential for designing filter devices…”
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Journal Article -
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High-Quality Single-Crystal Piezoelectric Aluminum Nitride Grown on Gallium Nitride Transition Layer on Sapphire Substrate
Published in 2022 IEEE International Ultrasonics Symposium (IUS) (10-10-2022)“…This paper presents a high-quality single-crystal piezoelectric aluminum nitride (AlN) thin film grown on gallium nitride (GaN) transition layer on sapphire…”
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