Search Results - "Nguyen Van Dau, F."

Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices by BAIBICH, M. N, BROTO, J. M, FERT, A, NGUYEN VAN DAU, F, PETROFF, F, ETIENNE, P, CREUZET, G, FRIEDERICH, A, CHAZELAS, J

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Principle of a variable capacitor based on Coulomb blockade of nanometric-size clusters by Seneor, P, Lidgi, N, Carrey, J, Jaffres, H, Dau, F. Nguyen Van, Friederich, A, Fert, A

“…We show how Coulomb blockade of electrons in a dispersive set of clusters embedded in the dielectric of a capacitor can be used to design a voltage tunable…”
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Linear and quadratic magneto-optical measurements of the spin reorientation in epitaxial Fe films on MgO by Postava, K., Jaffres, H., Schuhl, A., Nguyen Van Dau, F., Goiran, M., Fert, A.R.

“…We have undertaken a detailed study by magneto-optical techniques of in-plane magnetization reversal behaviour in epitaxial Fe films grown by MBE on (10 0)…”
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Electrical detection of spin accumulation in a p-type GaAs quantum well by Mattana, R, George, J-M, Jaffrès, H, Nguyen Van Dau, F, Fert, A, Lépine, B, Guivarc'h, A, Jézéquel, G

“…We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The…”
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Properties of spin-valve structures deposited on step-bunched vicinal surfaces by Encinas, A., Nguyen Van Dau, F., Schuhl, A., Montaigne, F., Sussiau, M., Galtier, P.

“…We have investigated the properties of Co/Cu/FeNi spin-valve structures deposited on step-bunched vicinal Si(1 1 1) substrates. We first discuss the in-plane…”
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Uniaxial magnetic anisotropy of thin epitaxial Fe films nanostructured by the atomic saw method by JAFFRES, H, RESSIERS, L, POSTAVA, K, SCHUHL, A, NGUYEN VAN DAUB, F, GOIRAN, M, REDOULES, J. P, PEYRADE, J. P, FERT, A. R

“…The "atomic saw" method, initially developed for semiconductor heterostructures, has been successfully used to cut an iron thin film, epitaxially grown onto a…”
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Sharp assembly of small clusters obtained by atom deposition for room temperature Coulomb blockade by Lidgi-Guigui, N., Seneor, P., Nguyen Van Dau, F., Friederich, A., Vaurès, A., Deranlot, C.

“…The growth of a nanocluster assembly on a processed Al O x and its electronic transport behavior are investigated. An Ar + plasma was used in order to create…”
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Switching-mode-dependent magnetic interlayer coupling strength in spin valves and magnetic tunnel junctions by PENNEC, Y, CAMARERO, J, VOGEL, J, TOUSSAINT, J. C, PIZZINI, S, BONFIM, M, PETROFF, F, KUCH, W, OFFI, F, FUKUMOTO, K, NGUYEN VAN DAU, F

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Enhanced tunnel magnetoresistance at high bias voltage in double-barrier planar junctions by Montaigne, F., Nassar, J., Vaurès, A., Van Dau, F. Nguyen, Petroff, F., Schuhl, A., Fert, A.

“…Single Co/Al2O3/NiFe and double Co/Al2O3/Co/Al2O3/NiFe planar tunnel junctions were grown by sputtering and subsequently patterned in a four-step process using…”
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Origin of magnetic anisotropy in thin films deposited on step-bunched substrates by Encinas-Oropesa, A., Nguyen Van Dau, F.

“…Ferromagnetic thin films of cobalt and permalloy have been grown on a non-planar Si(1 1 1) substrate presenting the step-bunching phenomenon. Room temperature…”
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Grafted 2D Assembly of Colloidal Metal Nanoparticles for Application as a Variable Capacitor by Lidgi-Guigui, N., Dablemont, C., Veautier, D., Viau, G., Seneor, P., Nguyen Van Dau, F., Mangeney, C., Vaurès, A., Deranlot, C., Friederich, A.

“…A combination of sputtering and colloidal chemistry is employed to prepare [Co/Al2O3//Ru nanoparticles//Al2O3/Co] junctions (see figure). These junctions are…”
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Low-field magnetic sensors based on the planar Hall effect by Schuhl, A., Van Dau, F. Nguyen, Childress, J. R.

“…Sensitive magnetic field detection devices have been fabricated based on the planar Hall effect. The active material consists of permalloy ultrathin films (6…”
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Development of a magnetic tunnel transistor based on a double tunnel junction by Rodary, G., Hehn, M., Dimopoulos, T., Lacour, D., Bangert, J., Jaffrès, H., Montaigne, F., van Dau, F. Nguyen, Petroff, F., Schuhl, A., Wecker, J.

“…We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ)…”
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On the use of exchange biased top electrodes in magnetic tunnel junctions by Lacour, D., Durand, O., Maurice, J.-L., Jaffrès, H., Nguyen Van Dau, F., Petroff, F., Etienne, P., Humbert, J., Vaurès, A.

“…We have investigated the magnetic behavior and the structural properties of ferromagnetic–antiferromagnetic systems (NiFe–IrMn and Co–IrMn) deposited directly…”
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Magnetic sensors for nanotesla detection using planar Hall effect by Nguyen Van Dau, F, Schuhl, A, Childress, J.R, Sussiau, M

“…We have fabricated sensitive magnetic sensors based on the planar Hall effect with a field resolution below 10 nT. The sensor response is linear over at least…”
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Fe3GaAs/GaAs(0 0 1): a stable and magnetic metal-semiconductor heterostructure by LEPINE, B, LALLAIZON, C, SCHIEFFER, P, GUIVARC'H, A, JEZEQUEL, G, ROCHER, A, ABEL, F, COHEN, C, DEPUTIER, S, NGUYEN VAN DAU, F

“…We show that in agreement with the ternary Fe-Ga-As phase diagram, the solid-state interdiffusions in epitaxial Fe/GaAs(001) heterostructures lead, at a…”
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Epitaxial growth of Fe films on cubic GaN(0 0 1) by Lallaizon, C., Schieffer, P., Lépine, B., Guivarc’h, A., Abel, F., Cohen, C., Feuillet, G., Daudin, B., Dau, F.Nguyen Van

“…Fe films have been grown on cubic GaN(0 0 1) layers by molecular beam epitaxy. They were studied in situ by reflection high-energy electron diffraction, X-ray…”
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Fe/GaAs(0 0 1) and Fe/GaSb(0 0 1) heterostructures: epitaxial growth and magnetic properties by Lépine, B, Lallaizon, C, Ababou, S, Guivarc'h, A, Députier, S, Filipe, A, Nguyen Van Dau, F, Schuhl, A, Abel, F, Cohen, C

“…We describe structural and magnetic properties of epitaxially grown Fe/GaAs(0 0 1) and Fe/GaSb(0 0 1) heterostructures. X-ray diffraction, He + ion channeling…”
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Current distribution effects in patterned non-linear magnetoresistive tunnel junctions by Montaigne, F., Nguyen Van Dau, F., Schuhl, A.

“…To be used in submicronic devices like magnetic memories, magnetic tunnel junctions require low resistances. Four-probe measurements of such resistances are…”
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Magnetoresistive tunnel junctions deposited on laterally modulated substrates by Montaigne, F., Gogol, P., Briatico, J., Maurice, J. L., Nguyen Van Dau, F., Petroff, F., Fert, A., Schuhl, A.

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