Evaluation of Truly Passive Crossbar Memory Arrays on Short Flow Characterization Vehicle Test Chips

More and more non volatile memory bit cell candidates are emerging which can be implemented between two metal layers in the BEOL process. Thus, short flow Characterization Vehicle® (CV®) Test Chips become beneficial for fast yield and endurance learning cycles. However, providing high observability...

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Bibliographic Details
Published in:	2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) pp. 80 - 84
Main Authors:	Hess, Christopher, Brozek, Tomasz, Schneider, Hendrik, Yu, Yuan, Lunenborg, Meindert, Ng, Khim Hong, Ciplickas, Dennis, Vallishayee, Rakesh, Dolainsky, Christoph, Weiland, Larg H.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-03-2019
Subjects:	Conferences Microelectronics Non Volatile Memory Passive Crossbar Memory Array Passive Mutiplexer Short Flow Characterization Vehicle Test Chip Test Structure
Online Access:	Get full text
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Summary:	More and more non volatile memory bit cell candidates are emerging which can be implemented between two metal layers in the BEOL process. Thus, short flow Characterization Vehicle® (CV®) Test Chips become beneficial for fast yield and endurance learning cycles. However, providing high observability of tail bits with ppm resolution requires access to more than just one bit cell per pad to be economically viable. Since, there are no FEOL switches available to address the bit cells we are evaluating truly Passive Crossbar Memory Arrays (PCMA) to significantly improve the bit per area ratio. Experimental results confirm successful memory operation based on fast parallel pulse testing. Design guidelines are presented to balance array size, signal to noise ratio, and test time.
ISBN:	9781728114644 1728114640
ISSN:	1071-9032 2158-1029
DOI:	10.1109/ICMTS.2019.8730984