Search Results - "Nevius, M. S."

Semiconducting Graphene from Highly Ordered Substrate Interactions by Nevius, M S, Conrad, M, Wang, F, Celis, A, Nair, M N, Taleb-Ibrahimi, A, Tejeda, A, Conrad, E H

“…While numerous methods have been proposed to produce semiconducting graphene, a significant band gap has never been demonstrated. The reason is that,…”
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A wide-bandgap metal–semiconductor–metal nanostructure made entirely from graphene by Hicks, J., Tejeda, A., Taleb-Ibrahimi, A., Nevius, M. S., Wang, F., Shepperd, K., Palmer, J., Bertran, F., Le Fèvre, P., Kunc, J., de Heer, W. A., Berger, C., Conrad, E. H.

“…Present methods for producing semiconducting–metallic graphene networks suffer from stringent lithographic demands, process-induced disorder in the graphene,…”
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The Bottom-up Growth of Edge Specific Graphene Nanoribbons by Nevius, M. S, Wang, F, Mathieu, C, Barrett, N, Sala, A, Menteş, T. O, Locatelli, A, Conrad, E. H

“…The discovery of ballistic transport in graphene grown on SiC(0001) sidewall trenches has sparked an intense effort to uncover the origin of this exceptional…”
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Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC by Wang, F., Liu, G., Rothwell, S., Nevius, M.S., Mathieu, C., Barrett, N., Sala, A., Menteş, T.O., Locatelli, A., Cohen, P.I., Feldman, L.C., Conrad, E.H.

“…A wide band gap semiconducting form of graphene can be produced by growing a buckled form of graphene from a SiC(0001¯) surface randomly seeded with nitrogen…”
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Silicon intercalation into the graphene-SiC interface by Wang, F., Shepperd, K., Hicks, J., Nevius, M. S., Tinkey, H., Tejeda, A., Taleb-Ibrahimi, A., Bertran, F., Le Fèvre, P., Torrance, D. B., First, P. N., de Heer, W. A., Zakharov, A. A., Conrad, E. H.

“…In this work we use low-energy electron microscopy, x-ray photoemission electron microscopy, and x-ray photoelectron spectroscopy to study how the excess Si at…”
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Edge states and ballistic transport in zig-zag graphene ribbons: the role of SiC polytypes by Miettinen, A. L, Nevius, M. S, Ko, W, Kolmer, M, Li, A. -P, Nair, M. N, Taleb-Ibrahimi, A, Kierren, B, Moreau, L, Conrad, E. H, Tejeda, A

“…Phys. Rev. B 100, 045425 (2019) Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene…”
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Semiconducting graphene from highly ordered substrate interactions by Nevius, M. S, Conrad, M, Wang, F, Celis, A, Nair, M. N, Taleb-Ibrahimi, A, Tejeda, A, Conrad, E. H

“…Phys. Rev. Lett. 115, 136802 (2015) While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been…”
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A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene by Hicks, J, Tejeda, A, Taleb-Ibrahimi, A, Nevius, M. S, Wang, F, Shepperd, K, Palmer, J, Bertran, F, Fèvre, P. Le, Kunc, J, de Heer, W. A, Berger, C, Conrad, E. H

“…A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all…”
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A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene by Hicks, J., Tejeda, A., Taleb-Ibrahimi, A., Nevius, M. S., Wang, F., Shepperd, K., Palmer, J., Bertran, F., Fèvre, P. Le, Kunc, J., de Heer, W. A., Berger, Claire, Conrad, E. H.

“…A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all…”
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Silicon intercalation into the graphene-SiC interface by Wang, F, Shepperd, K, Hicks, J, Nevius, M. S, Tinkey, H, Tejeda, A, Taleb-Ibrahimi, A, Bertran, F, F`evre, P. Le, Torrance, D. B, First, P, de Heer, W. A, Zakharov, A. A, Conrad, E. H

“…In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon…”
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