Search Results - "Nevedomskiy, V.N."
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Peroxide route to the synthesis of ultrafine CeO2-Fe2O3 nanocomposite via successive ionic layer deposition
Published in Heliyon (01-03-2019)“…An ultrafine α-CeO2–α-Fe2O3 nanocomposite was prepared from the ultradispersed nanoparticles of cerium (IV) and iron (III) amorphous hydroxides heat-treated at…”
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Steam exfoliation of graphitic carbon nitride as efficient route toward metal-free electrode materials for hydrogen production
Published in International journal of hydrogen energy (19-08-2023)“…This study demonstrates the potential of obtaining nanostructured materials based on g-C3N4 with a high specific surface area for use as efficient electrode…”
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Chemical and structural changes of g-C3N4 through oxidative physical vapor deposition
Published in Applied surface science (30-10-2022)“…•The initial g-C3N4 powder was obtained by thermolysis of urea in air in the air.•The g-C3N4 deposition method via oxidative physical vapor deposition was…”
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Enhancement of acidic-basic properties of silica by modification with CeO2-Fe2O3 nanoparticles via successive ionic layer deposition
Published in Applied surface science (15-04-2019)“…The procedure aimed at synthesis of ultrafine CeO2-Fe2O3 nanocrystals by SILD method was elaborated. The procedure was applied for silica modification. It was…”
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Heat-stimulated crystallization and phase transformation of titania nanoparticles
Published in Journal of crystal growth (15-12-2021)“…[Display omitted] •Amorphous state of titania is stabilized by water molecules in its structure.•After water removal amorphous titania transforms to anatase of…”
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Formation and growth of anatase TiO2 nanocrystals under hydrothermal conditions
Published in Materials today communications (01-08-2023)“…This work is devoted to the study of the processes of formation and growth of TiO2 nanoparticles under hydrothermal conditions. TiO2 nanocrystals were obtained…”
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Effect of spatial constraints on the phase evolution of YFeO3-based nanopowders under heat treatment of glycine-nitrate combustion products
Published in Ceramics international (01-12-2018)“…Formation and structural transformations of yttrium orthoferrite crystals have been studied using X-ray diffractometry, Mössbauer spectroscopy and transmission…”
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SCS-assisted production of EuFeO3 core-shell nanoparticles: formation process, structural features and magnetic behavior
Published in Journal of alloys and compounds (05-04-2021)“…This work reports an original approach to the synthesis of composite “core-shell” nanoparticles of o-EuFeO3@am-EuFeO3 via solution combustion synthesis (SCS)…”
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Pyrochlore phase in the Bi2O3–Fe2O3–WO3–(H2O) system: Physicochemical and hydrodynamic aspects of its production using a microreactor with intensively swirled flows
Published in Advanced powder technology : the international journal of the Society of Powder Technology, Japan (01-07-2023)“…[Display omitted] •Microreactor-assisted synthesis of a (Bi,Fe, □)2(Fe,W)2O6O′δ cubic pyrochlore-structured phase was studied.•High-quality micromixing in a…”
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Physicochemical and hydrodynamic aspects of GdFeO3 production using a free impinging-jets method
Published in Chemical engineering and processing (01-09-2021)“…•Free impinging-jets microreactor was used to obtain GdFeO3 NPs via co-precipitation.•Co-precipitation process was affected by physicochemistry and…”
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11
Silicon–carbon nanocomposites produced by reduction of carbon monofluoride by silicon
Published in Journal of alloys and compounds (15-06-2020)“…It is suggested to form porous silicon-carbon nanocomposites via thermal reduction of carbon monofluoride by silicon. For this purpose a mixture of powders of…”
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InAs QDs in a metamorphic [In.sub.0.25][Ga.sub.0.75]As matrix, grown by MOCVD
Published in Semiconductors (Woodbury, N.Y.) (01-05-2017)“…InAs quantum dots (QDs) in a metamorphic InGaAs matrix are grown by MOVPE (metal-organic vapor-phase epitaxy) on GaAs substrates. The QDs emit light in the…”
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Study of the structural and optical properties of GaP 4[degrees] substrates
Published in Semiconductors (Woodbury, N.Y.) (01-02-2017)“…The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4[degrees] are studied…”
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Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
Published in Semiconductors (Woodbury, N.Y.) (01-05-2016)“…It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range,…”
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15
Emission spectra of a laser based on an InAs/GaAs quantum-dot superlattice
Published in Semiconductors (Woodbury, N.Y.) (01-10-2015)“…The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs…”
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Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures
Published in Semiconductors (Woodbury, N.Y.) (01-10-2015)“…It is shown that metamorphic In 0.3 Ga 0.7 As/In 0.3 Al 0.7 As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of…”
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Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range
Published in Semiconductors (Woodbury, N.Y.) (01-11-2015)“…Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It…”
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Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures
Published in Semiconductors (Woodbury, N.Y.) (01-12-2015)“…A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and…”
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Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix
Published in Semiconductors (Woodbury, N.Y.) (01-11-2014)“…Electron-microscopy studies of GaAs structures grown by the method of molecular-beam epitaxy and containing arrays of semiconductor InAs quantum dots and…”
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Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier
Published in Semiconductors (Woodbury, N.Y.) (01-09-2013)“…Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As…”
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