Search Results - "Nevedomskiy, V.N."

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  1. 1

    Peroxide route to the synthesis of ultrafine CeO2-Fe2O3 nanocomposite via successive ionic layer deposition by Popkov, V.I., Tolstoy, V.P., Nevedomskiy, V.N.

    Published in Heliyon (01-03-2019)
    “…An ultrafine α-CeO2–α-Fe2O3 nanocomposite was prepared from the ultradispersed nanoparticles of cerium (IV) and iron (III) amorphous hydroxides heat-treated at…”
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  2. 2

    Steam exfoliation of graphitic carbon nitride as efficient route toward metal-free electrode materials for hydrogen production by Chebanenko, M.I., Omarov, Sh.O., Lobinsky, A.A., Nevedomskiy, V.N., Popkov, V.I.

    Published in International journal of hydrogen energy (19-08-2023)
    “…This study demonstrates the potential of obtaining nanostructured materials based on g-C3N4 with a high specific surface area for use as efficient electrode…”
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  3. 3

    Chemical and structural changes of g-C3N4 through oxidative physical vapor deposition by Chebanenko, M.I., Lebedev, L.A., Ugolkov, V.L., Prasolov, N.D., Nevedomskiy, V.N., Popkov, V.I.

    Published in Applied surface science (30-10-2022)
    “…•The initial g-C3N4 powder was obtained by thermolysis of urea in air in the air.•The g-C3N4 deposition method via oxidative physical vapor deposition was…”
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  4. 4

    Enhancement of acidic-basic properties of silica by modification with CeO2-Fe2O3 nanoparticles via successive ionic layer deposition by Popkov, V.I., Tolstoy, V.P., Omarov, S.O., Nevedomskiy, V.N.

    Published in Applied surface science (15-04-2019)
    “…The procedure aimed at synthesis of ultrafine CeO2-Fe2O3 nanocrystals by SILD method was elaborated. The procedure was applied for silica modification. It was…”
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  5. 5

    Heat-stimulated crystallization and phase transformation of titania nanoparticles by Bachina, Almjasheva, O.V., Popkov, V.I., Nevedomskiy, V.N., Gusarov, V.V.

    Published in Journal of crystal growth (15-12-2021)
    “…[Display omitted] •Amorphous state of titania is stabilized by water molecules in its structure.•After water removal amorphous titania transforms to anatase of…”
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  6. 6

    Formation and growth of anatase TiO2 nanocrystals under hydrothermal conditions by Zlobin, V.V., Nevedomskiy, V.N., Almjasheva, O.V.

    Published in Materials today communications (01-08-2023)
    “…This work is devoted to the study of the processes of formation and growth of TiO2 nanoparticles under hydrothermal conditions. TiO2 nanocrystals were obtained…”
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  7. 7

    Effect of spatial constraints on the phase evolution of YFeO3-based nanopowders under heat treatment of glycine-nitrate combustion products by Popkov, V.I., Almjasheva, O.V., Nevedomskiy, V.N., Panchuk, V.V., Semenov, V.G., Gusarov, V.V.

    Published in Ceramics international (01-12-2018)
    “…Formation and structural transformations of yttrium orthoferrite crystals have been studied using X-ray diffractometry, Mössbauer spectroscopy and transmission…”
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  8. 8

    SCS-assisted production of EuFeO3 core-shell nanoparticles: formation process, structural features and magnetic behavior by Popkov, V.I., Martinson, K.D., Kondrashkova, I.S., Enikeeva, M.O., Nevedomskiy, V.N., Panchuk, V.V., Semenov, V.G., Volkov, M.P., Pleshakov, I.V.

    Published in Journal of alloys and compounds (05-04-2021)
    “…This work reports an original approach to the synthesis of composite “core-shell” nanoparticles of o-EuFeO3@am-EuFeO3 via solution combustion synthesis (SCS)…”
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  9. 9
  10. 10

    Physicochemical and hydrodynamic aspects of GdFeO3 production using a free impinging-jets method by Albadi, Y., Abiev, R.S., Sirotkin, A.A., Martinson, K.D., Chebanenko, M.I., Nevedomskiy, V.N., Buryanenko, I.V., Semenov, V.G., Popkov, V.I.

    Published in Chemical engineering and processing (01-09-2021)
    “…•Free impinging-jets microreactor was used to obtain GdFeO3 NPs via co-precipitation.•Co-precipitation process was affected by physicochemistry and…”
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  11. 11

    Silicon–carbon nanocomposites produced by reduction of carbon monofluoride by silicon by Astrova, E.V., Ulin, V.P., Parfeneva, A.V., Rumyantsev, A.M., Voronkov, V.B., Nashchekin, A.V., Nevedomskiy, V.N., Koshtyal, Y.M., Tomkovich, M.V.

    Published in Journal of alloys and compounds (15-06-2020)
    “…It is suggested to form porous silicon-carbon nanocomposites via thermal reduction of carbon monofluoride by silicon. For this purpose a mixture of powders of…”
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  12. 12

    InAs QDs in a metamorphic [In.sub.0.25][Ga.sub.0.75]As matrix, grown by MOCVD by Mintairov, S.A, Kalyuzhnyy, N.A, Maximov, M.V, Nadtochiy, A.M, Nevedomskiy, V.N, Zhukov, A.E

    Published in Semiconductors (Woodbury, N.Y.) (01-05-2017)
    “…InAs quantum dots (QDs) in a metamorphic InGaAs matrix are grown by MOVPE (metal-organic vapor-phase epitaxy) on GaAs substrates. The QDs emit light in the…”
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  13. 13

    Study of the structural and optical properties of GaP 4[degrees] substrates by Kryzhanovskaya, N.V, Polubavkina, Yu. S, Nevedomskiy, V.N, Nikitina, E.V, Lazarenko, A.A, Egorov, A. Yu, Maximov, M.V, Moiseev, E.I, Zhukov, A.E

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2017)
    “…The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4[degrees] are studied…”
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  14. 14

    Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range by Egorov, A. Yu, Karachinsky, L. Ya, Novikov, I. I., Babichev, A. V., Nevedomskiy, V. N., Bugrov, V. E.

    Published in Semiconductors (Woodbury, N.Y.) (01-05-2016)
    “…It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range,…”
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  15. 15

    Emission spectra of a laser based on an InAs/GaAs quantum-dot superlattice by Sobolev, M.M, Buyalo, M.S, Nevedomskiy, V.N, Zadiranov, Yu. M, Zolotareva, R.V, Vasil'ev, A.P, Ustinov, V.M, Portnoi, E.L

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2015)
    “…The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs…”
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  16. 16

    Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures by Egorov, A. Yu, Karachinsky, L. Ya, Novikov, I. I., Babichev, A. V., Berezovskaya, T. N., Nevedomskiy, V. N.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2015)
    “…It is shown that metamorphic In 0.3 Ga 0.7 As/In 0.3 Al 0.7 As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of…”
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  17. 17

    Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range by Egorov, A. Yu, Karachinsky, L. Ya, Novikov, I. I., Babichev, A. V., Nevedomskiy, V. N., Bugrov, V. E.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2015)
    “…Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It…”
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  18. 18

    Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures by Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhernskiy, V. V., Putyato, M. A., Semyagin, B. R.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2015)
    “…A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and…”
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  19. 19

    Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix by Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2014)
    “…Electron-microscopy studies of GaAs structures grown by the method of molecular-beam epitaxy and containing arrays of semiconductor InAs quantum dots and…”
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  20. 20

    Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier by Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

    Published in Semiconductors (Woodbury, N.Y.) (01-09-2013)
    “…Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As…”
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