Search Results - "Neuschl, Benjamin"

GaInN Quantum Wells as Optochemical Transducers for Chemical Sensors and Biosensors by Heinz, Dominik, Huber, Florian, Spiess, Maximilian, Asad, Muhammad, Linyuan Wu, Rettig, Oliver, Donghao Wu, Neuschl, Benjamin, Bauer, Sebastian, Yuzhou Wu, Chakrabortty, Sabyasachi, Hibst, Nicolas, Strehle, Steffen, Weil, Tanja, Thonke, Klaus, Scholz, Ferdinand

“…In this paper, investigations on gallium indium nitride (GaInN) quantum well structures as optochemical transducers in (bio)chemical sensing are presented. In…”
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Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties by Bickermann, Matthias, Filip, Octavian, Epelbaum, Boris M., Heimann, Paul, Feneberg, Martin, Neuschl, Benjamin, Thonke, Klaus, Wedler, Elke, Winnacker, Albrecht

“…AlN single crystals are grown by physical vapor transport (PVT) in sintered TaC crucibles in the presence of SiC, i.e. by seeding on 6H–SiC or by adding SiC to…”
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Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN by Neuschl, Benjamin, Thonke, Klaus, Feneberg, Martin, Mita, Seiji, Xie, Jinqiao, Dalmau, Rafael, Collazo, Ramón, Sitar, Zlatko

“…Aluminum nitride (AlN) layers doped intentionally with different concentrations of silicon atoms acting as shallow donors were grown by MOVPE on bulk c‐plane…”
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Negative spin-exchange splitting in the exciton fine structure of AlN by Feneberg, Martin, Fátima Romero, María, Neuschl, Benjamin, Thonke, Klaus, Röppischer, Marcus, Cobet, Christoph, Esser, Norbert, Bickermann, Matthias, Goldhahn, Rüdiger

“…The exact energy position of the free exciton transition and thus the lowest band gap in bulk wurtzite AlN are still under discussion. By combined high…”
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Sharp bound and free exciton lines from homoepitaxial AlN by Feneberg, Martin, Neuschl, Benjamin, Thonke, Klaus, Collazo, Ramón, Rice, Anthony, Sitar, Zlatko, Dalmau, Rafael, Xie, Jinqiao, Mita, Seiji, Goldhahn, Rüdiger

“…MOCVD AlN layers grown in c‐direction on PVT bulk AlN substrates are investigated by high‐resolution photoluminescence in the energy region of the band gap…”
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High-excitation and high-resolution photoluminescence spectra of bulk AlN by Feneberg, Martin, Leute, Robert A. R., Neuschl, Benjamin, Thonke, Klaus, Bickermann, Matthias

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Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer by Scholz, Ferdinand, Forghani, Kamran, Klein, Martin, Klein, Oliver, Kaiser, Ute, Neuschl, Benjamin, Tischer, Ingo, Feneberg, Martin, Thonke, Klaus, Lazarev, Sergey, Bauer, Sondes, Baumbach, Tilo

“…We have decreased the dislocation density in Al x Ga 1-x N epitaxial layers grown on sapphire wafers by introducing an in-situ deposited SiN nano-mask layer…”
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Optical gas sensing by micro-photoluminescence on multiple and single ZnO nanowires by Madel, Manfred, Jakob, Julian, Huber, Florian, Neuschl, Benjamin, Bauer, Sebastian, Xie, Yong, Tischer, Ingo, Thonke, Klaus

“…ZnO nanowires with average diameters of 50–200 nm were grown by chemical vapor deposition. Their gas sensing properties were analyzed by…”
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Enforced c -axis growth of ZnO epitaxial chemical vapor deposition films on a -plane sapphire by Xie, Yong, Madel, Manfred, Zoberbier, Thilo, Reiser, Anton, Jie, Wanqi, Neuschl, Benjamin, Biskupek, Johannes, Kaiser, Ute, Feneberg, Martin, Thonke, Klaus

“…To enforce perfect c -axis orientation of ZnO epitaxial films grown on a -plane sapphire, we first grew perfectly perpendicularly aligned (i.e., c axis…”
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Optical gas sensing by micro-photoluminescence on multiple and single ZnO nanowires: Optical gas sensing on ZnO nanowires by Madel, Manfred, Jakob, Julian, Huber, Florian, Neuschl, Benjamin, Bauer, Sebastian, Xie, Yong, Tischer, Ingo, Thonke, Klaus

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Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN by Feneberg, Martin, Romero, María Fátima, Neuschl, Benjamin, Thonke, Klaus, Röppischer, Marcus, Cobet, Christoph, Esser, Norbert, Bickermann, Matthias, Goldhahn, Rüdiger

“…Exciton resonances are observed in the dielectric functions of wurtzite AlN by spectroscopic ellipsometry for the electric field vector parallel and…”
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Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N by Feneberg, Martin, Röppischer, Marcus, Esser, Norbert, Cobet, Christoph, Neuschl, Benjamin, Meisch, Tobias, Thonke, Klaus, Goldhahn, Rüdiger

“…We demonstrate that synchrotron-based photoluminescence excitation (PLE) spectroscopy is a versatile tool for determining valence band splittings of AlN and…”
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Optical properties of defects in nitride semiconductors by Tischer, Ingo, Hocker, Matthias, Neuschl, Benjamin, Madel, Manfred, Feneberg, Martin, Schirra, Martin, Frey, Manuel, Knab, Manuel, Maier, Pascal, Wunderer, Thomas, Leute, Robert A.R., Wang, Junjun, Scholz, Ferdinand, Biskupek, Johannes, Bernhard, Jörg, Kaiser, Ute, Simon, Ulrich, Dieterle, Levin, Groiss, Heiko, Müller, Erich, Gerthsen, Dagmar, Thonke, Klaus

“…Group III nitrides are promising materials for light emitting diodes (LEDs). The occurrence of structural defects strongly affects the efficiency of these…”
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Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al 0.94 Ga 0.06 N by Feneberg, Martin, Röppischer, Marcus, Esser, Norbert, Cobet, Christoph, Neuschl, Benjamin, Meisch, Tobias, Thonke, Klaus, Goldhahn, Rüdiger

“…We demonstrate that synchrotron-based photoluminescence excitation (PLE) spectroscopy is a versatile tool for determining valence band splittings of AlN and…”
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Catalytic growth of hexagonally aligned ZnO nanorods by Madel, Manfred, Xie, Yong, Tischer, Ingo, Neuschl, Benjamin, Feneberg, Martin, Frey, Reinhard, Thonke, Klaus

“…Aligned ZnO nanorods were prepared using colloid‐based self‐assembling techniques to structure the gold catalyst. Two different processes were used and are…”
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Growth of A1N bulk crystals on SiC seeds: Chemical analysis and crystal properties by BICKERMANN, Matthias, FILIP, Octavian, EPELBAUM, Boris M, HEIMANN, Paul, FENEBERG, Martin, NEUSCHL, Benjamin, THONKE, Klaus, WEDLER, Elke, WINNACKER, Albrecht

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Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution by Tischer, Ingo, Frey, Manuel, Hocker, Matthias, Jerg, Lisa, Madel, Manfred, Neuschl, Benjamin, Thonke, Klaus, Leute, Robert A.R., Scholz, Ferdinand, Groiss, Heiko, Müller, Erich, Gerthsen, Dagmar

“…We investigate the optical and structural properties of an AlGaN layer with low Al content grown on a {11‾01} semipolar GaN facet. The correlation of scanning…”
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Anisotropic absorption and emission of bulk ( 1 1 ¯ 00 ) AlN by Feneberg, Martin, Romero, María Fátima, Röppischer, Marcus, Cobet, Christoph, Esser, Norbert, Neuschl, Benjamin, Thonke, Klaus, Bickermann, Matthias, Goldhahn, Rüdiger

“…The intrinsic anisotropic optical properties of wurtzite AlN are investigated in absorption and emission. Full access to the anisotropy of the optical response…”
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Sharp bound and free exciton lines from homoepitaxial AIN by FENEBERG, Martin, NEUSCHL, Benjamin, THONKE, Klaus, COLLAZO, Ramón, RICE, Anthony, SITAR, Zlatko, DALMAU, Rafael, JINQIAO XIE, MITA, Seiji, GOLDHAHN, Rudiger

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Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AIN by FENEBERG, Martin, ROMERO, María Fátima, NEUSCHL, Benjamin, THONKE, Klaus, RÖPPISCHER, Marcus, COBET, Christoph, ESSER, Norbert, BICKERMANN, Matthias, GOLDHAHN, Rüdiger

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