Search Results - "Netzel, Carsten"

Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates by Hagedorn, Sylvia, Kolbe, Tim, Schmidt, Gordon, Bertram, Frank, Netzel, Carsten, Knauer, Arne, Veit, Peter, Christen, Jürgen, Weyers, Markus

“…AlN layers annealed at high temperatures offer low threading dislocation densities of mid 108 cm−2 and are therefore increasingly used as base layers in…”
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Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes by Hagedorn, Sylvia, Walde, Sebastian, Knauer, Arne, Susilo, Norman, Pacak, Daniel, Cancellara, Leonardo, Netzel, Carsten, Mogilatenko, Anna, Hartmann, Carsten, Wernicke, Tim, Kneissl, Michael, Weyers, Markus

“…Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting…”
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Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates by Martens, Martin, Mehnke, Frank, Kuhn, Christian, Reich, Chirstoph, Kueller, Viola, Knauer, Arne, Netzel, Carsten, Hartmann, Carsten, Wollweber, Juergen, Rass, Jens, Wernicke, Tim, Bickermann, Matthias, Weyers, Markus, Kneissl, Michael

“…The performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279 nm are investigated. The…”
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Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes by Hagedorn, Sylvia, Walde, Sebastian, Susilo, Norman, Netzel, Carsten, Tillner, Nadine, Unger, Ralph-Stephan, Manley, Phillip, Ziffer, Eviathar, Wernicke, Tim, Becker, Christiane, Lugauer, Hans-Jürgen, Kneissl, Michael, Weyers, Markus

“…Herein, AlN growth by metalorganic vapor‐phase epitaxy on hole‐type nanopatterned sapphire substrates is investigated. Cracking occurs for an unexpectedly…”
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Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells by Netzel, Carsten, Hoffmann, Veit, Tomm, Jens W., Mahler, Felix, Einfeldt, Sven, Weyers, Markus

“…Temperature‐dependent transport of photoexcited charge carriers through a nominally undoped, c‐plane GaN layer toward buried InGaN quantum wells is…”
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UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates by Jeschke, Joerg, Martens, Martin, Knauer, Arne, Kueller, Viola, Zeimer, Ute, Netzel, Carsten, Kuhn, Christian, Krueger, Felix, Reich, Christoph, Wernicke, Tim, Kneissl, Michael, Weyers, Markus

“…AlGaN multiple quantum well lasers for optical pumping have been grown by metal-organic vapor phase epitaxy on high and low dislocation density AlN/sapphire…”
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Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers by Netzel, Carsten, Stellmach, Joachim, Feneberg, Martin, Frentrup, Martin, Winkler, Michael, Mehnke, Frank, Wernicke, Tim, Goldhahn, Rüdiger, Kneissl, Michael, Weyers, Markus

“…We studied the optical polarization of surface-emitted photoluminescence from thick semi-polar (11–22) AlxGa1−xN layers on m-plane sapphire substrates with…”
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Quantum Efficiency Analysis of Near-Ultraviolet Emitting AlGaN and AlInGaN Structures by Netzel, Carsten, Knauer, Arne, Weyers, Markus

“…The quantum efficiency of $c$-plane Al x Ga 1-x N and Al x In y Ga 1-x-y N structures ($x = 0.06{\mbox{--}}0.21$, $y = 0.015{\mbox{--}}0.05$) emitting in the…”
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Temperature Dependence of Dark Spot Diameters in GaN and AlGaN by Netzel, Carsten, Knauer, Arne, Brunner, Frank, Mogilatenko, Anna, Weyers, Markus

“…Threading dislocations in c‐plane (Al,Ga)N layers are surrounded by areas with reduced light generation efficiency, called “dark spots.” These areas are…”
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High‐Temperature Annealing of Si‐Doped AlGaN by Zainal, Norzaini, Hagedorn, Sylvia, Netzel, Carsten, Kolbe, Tim, Weyers, Markus

“…This study explores the impact of Si doping on the material properties of high‐temperature annealed (HTA) Al 0.71 Ga 0.29 N layers, which are grown on…”
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Gallium Phosphide Nanowires Grown on SiO 2 by Gas-Source Molecular Beam Epitaxy by Kang, Songdan, Golz, Christian, Netzel, Carsten, Mediavilla, Irene, Serrano, Jorge, Jiménez, Juan, Hatami, Fariba

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Role of Oxygen Incorporation in High Temperature Annealed AlGaN by Zainal, Norzaini, Hagedorn, Sylvia, Netzel, Carsten, Mogilatenko, Anna, Schön, Matthias, Weyers, Markus

“…High‐temperature annealing (HTA) is a powerful technique to decrease dislocation density in AlN, which can also be applied on AlGaN. This work investigates the…”
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Gallium Phosphide Nanowires Grown on SiO2 by Gas-Source Molecular Beam Epitaxy by Kang, Songdan, Golz, Christian, Netzel, Carsten, Mediavilla, Irene, Serrano, Jorge, Jiménez, Juan, Hatami, Fariba

“…GaP as one of the III–V semiconductors has an indirect band gap in its natural zinc-blend (ZB) crystal phase, limiting its applications in optoelectronics. The…”
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Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy by Kafi, Navid, Kang, Songdan, Golz, Christian, Rodrigues-Weisensee, Adriana, Persichetti, Luca, Ryzhak, Diana, Capellini, Giovanni, Spirito, Davide, Schmidbauer, Martin, Kwasniewski, Albert, Netzel, Carsten, Skibitzki, Oliver, Hatami, Fariba

“…Gallium phosphide (GaP) is a III–V semiconductor with remarkable optoelectronic properties, and it has almost the same lattice constant as silicon (Si)…”
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High‐Temperature Annealing of AlGaN by Hagedorn, Sylvia, Khan, Taimoor, Netzel, Carsten, Hartmann, Carsten, Walde, Sebastian, Weyers, Markus

“…In the past few years, high‐temperature annealing of AlN has become a proven method for providing AlN layers with low dislocation densities. Herein, the…”
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Avoidance of instable photoluminescence intensity from AlGaN bulk layers by Netzel, Carsten, Jeschke, Jörg, Knauer, Arne, Weyers, Markus

“…The emission intensity from c‐plane AlGaN bulk layers changes strongly on time scales from seconds to hours during above band gap illumination in…”
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MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808 nm by BUGGE, Frank, NETZEL, Carsten, WEYERS, Markus

“…Al0.85Ga0.15As cladding layers in 808 nm laser diodes grown by MOVPE result in inferior device performance when grown with the same growth parameters as the…”
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High power UVB light emitting diodes with optimized n-AlGaN contact layers by Knauer, Arne, Kolbe, Tim, Rass, Jens, Cho, Hyun Kyong, Netzel, Carsten, Hagedorn, Sylvia, Lobo-Ploch, Neysha, Jan Ruschel, Glaab, Johannes, Einfeldt, Sven, Weyers, Markus

“…The influence of the n-AlGaN contact layer thickness and doping profile on the efficiency, operating voltage and lifetime of 310 nm LEDs has been investigated…”
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Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates by Huang, Chia-Yen, Walde, Sebastian, Tsai, Chia-Lung, Netzel, Carsten, Liu, Hsueh-Hsing, Hagedorn, Sylvia, Wu, Yuh-Renn, Fu, Yi-Keng, Weyers, Markus

“…The influence of compressive strain in high-quality AlN templates on the subsequent growth of AlGaN-based device layers was investigated. The AlN templates…”
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MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808nm by Bugge, Frank, Netzel, Carsten, Weyers, Markus

“…Al0.85Ga0.15As cladding layers in 808nm laser diodes grown by MOVPE result in inferior device performance when grown with the same growth parameters as the…”
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