JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications
We demonstrate highly reliable and mass-production ready 22nm FD-SOI 40Mb embedded-MRAM for industrial-grade (-40~125°C) applications. This technology having 5x solder reflows compatibility stack has passed JEDEC standard qualification (ECC-OFF) with total reliability failures below the product life...
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Published in: | 2020 IEEE International Electron Devices Meeting (IEDM) pp. 11.3.1 - 11.3.4 |
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Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
Format: | Conference Proceeding |
Language: | English |
Published: |
IEEE
12-12-2020
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Subjects: | |
Online Access: | Get full text |
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Summary: | We demonstrate highly reliable and mass-production ready 22nm FD-SOI 40Mb embedded-MRAM for industrial-grade (-40~125°C) applications. This technology having 5x solder reflows compatibility stack has passed JEDEC standard qualification (ECC-OFF) with total reliability failures below the product life-time bit-failure-rate requirement for industrial-grade. Using design-process co-optimization, we show the extended performance to meet -40~150°C product operation for Auto-Grade-1 applications with stable read performance, ~47% reduced read power, data retention of 20yrs (0.1 PPM), read disturb rate of <; 1 PPM for ~1M cycles with 500Oe field, 1M endurance cycles, and stand-by magnetic immunity (SMI) of ~1400Oe at 25°C and ~500Oe at 150°C (0.1 PPM). With magnetic shield-in package solution, we demonstrate ~4kOe SMI at 25°C for 48hrs of field exposure. |
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ISSN: | 2156-017X |
DOI: | 10.1109/IEDM13553.2020.9371935 |