Search Results - "Nenyei, Z."

Non-destructive probing of interfacial oxidation and nitridation states at RTP Si-oxides by Hoffmann, P, Schmeißer, D, Roters, G, Nenyei, Z

“…The quality of the SiO 2/Si interface is of crucial importance in the development and performance of sub 0.1 μm technologies. The knowledge of the chemical…”
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NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications by Chung, H.Y.A., Dietl, W., Niess, J., Nényei, Z., Lerch, W., Wieczorek, K., Krumm, N., Ludsteck, A., Eisele, I.

“…Ultra-thin oxynitrides can serve as gate dielectrics for the technology nodes 100 nm and below. In this work, we present the properties of ultra-thin…”
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Physical aspects of particle deposition in RTP by Schmid, P., Frigge, S., Huelsmann, Th, Nadig, B., Nenyei, Z., Reisdorf, R.

“…Advanced-logic and DRAM technology for the 90 nm node and beyond results in increasingly stringent particle specifications. Particles can be transported to the…”
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Controlled thermal kinetics in RTP by Niess, J., Grunwald, Ch, Strohmaier, R., Nényei, Z.

“…Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rate limited and…”
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Uniform durable thin dielectrics prepared by rapid thermal processing in an N/sub 2/O ambient by Bienek, R., Nenyei, Z.

“…Thin dielectrics grown on silicon wafers by rapid thermal processing in an N/sub 2/O ambient at temperatures of 1100 degrees C, 1150 degrees C, and 1200…”
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Uniform durable thin dielectrics prepared by rapid thermalprocessing in an N(2)O ambient by Bienek, R, Nenyei, Z

“…Thin dielectrics grown on silicon wafers by rapid thermal processing in an N(2)O ambient at temperatures of 1100 deg C, 1150 deg C, and 1200 deg C are…”
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Lights and shadows in european RTP history (as it happened or raight have happened) by Nenyei, Z., Roters, G.

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Uniform durable thin dielectrics prepared by rapid thermal processing in an N2O ambient by BIENEK, R, NENYEI, Z

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Growth modes and characterization of thin RTP silicon oxides by Eisele, I., Ludsteck, A., Schulze, J., Nenyei, Z.

“…For thin thermally grown oxides it is necessary to consider not only the transport of oxygen from the gas phase to the Si/SiO/sub 2/ interface but also the…”
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Rapid thermal growth of silicon nitride films by Ludsteck, A., Schulze, J., Eisele, I., Nenyei, Z.

“…Based on our growth model for thin thermal oxides, we have investigated the growth of thin silicon nitrides formed by rapid thermal processing in NH/sub 3/. It…”
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Pattern effects and how to explore them by Niess, J., Berger, R., Timans, P.J., Nenyei, Z.

“…Pattern effects in RTP are of increasing interest as device feature sizes decrease because of their strong impact on process uniformity and defect generation,…”
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Pattern shift reduction in dual side heated RTP systems with hot shielding technology by Berger, R., Miethaner, S., Gruber, H., Niess, J., Dietl, W., Nenyei, Z.

“…Pattern induced thermal nonuniformities play an important role in modem rapid thermal processing (RTP). Implementation of hot shielding technology has been…”
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Advantages of the hot-shielding technology with regard to ultra thin RTO quality by Stadler, A., Schulze, J., Baumgartner, H., Eisele, I., Dietl, W., Nenyei, Z.

“…The requirement for best gate oxide integrity and oxide preparation at lowest possible thermal budget is in many cases not compatible. It has been reported…”
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Characterization and minimization of moisture concentration in atmospheric pressure RTP tools, using an in situ absorption spectroscopy sensor by Graf, T., Meyer, K., Nenyei, Z., Lerch, W., Inman, R., McAndrew, J.

“…Small amounts of moisture and oxygen in the several ppm regime are key contaminants in RTP, but moisture is much more difficult to remove than oxygen and…”
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Comparative stud of low temperature poly-Si TFTs obtained by various crystallization techniques for use in active matrix LCDs by Pattyn, H., Poortmans, J., Debenest, P., Caymax, M., Vetter, P., Elliq, M., Fogarassy, E., Nenyei, Z., Nijs, J., Mertens, R.

“…Based on the electrical characteristics of low temperature poly-Si TFTs, various crystallization methods for the formation of the poly-Si bulk layer are…”
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Ultra thin oxide characterization with MBE deposited poly silicon by Stadler, A., Schulze, J., Tolksdorf, C., Sedimaier, S., Eisele, I., Dietl, W., Roters, G.L., Nenyei, Z.

“…In this paper we present a new approach to determine D/sub it/ and Q/sub BD/ of the Si-SiO/sub 2/ interface by using a highly doped Poly-Si electrode deposited…”
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Pattern Effects with the Mask off by Nenyei, Z., Niess, J., Lerch, W., Dietl, W., Timans, P.J., Pichler, P.

“…Pattern effects during RTP have been extensively studied for the last 15 years, but have only recently attained focus in device production. The detection and…”
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RTP application and technology options for the sub-45 nm nodes by MacKnight, R.B., Timans, P.J., Tay, S.-P., Nenyei, Z.

“…As device dimensions have reduced to nanometer length scales, rapid thermal processing (RTP) has emerged as the key approach for providing the low thermal…”
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Challenges for ultra-shallow junction formation technologies beyond the 90 nm node by Timans, P.J., Lerch, W., Niess, J., Paul, S., Acharya, N., Nenyei, Z.

“…The continuing scaling of MOS devices poses increasing challenges for the formation of ultra-shallow junctions (USJ). At the 90 nm device node USJ requirements…”
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NH 3-RTP grown ultra-thin oxynitride layers for MOS gate applications by Chung, H.Y.A., Dietl, W., Niess, J., Nényei, Z., Lerch, W., Wieczorek, K., Krumm, N., Ludsteck, A., Eisele, I.

“…Ultra-thin oxynitrides can serve as gate dielectrics for the technology nodes 100 nm and below. In this work, we present the properties of ultra-thin…”
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