Search Results - "Nenchuk, T M"

Studies of indium nanostructures growth models on A3B6 layered templates by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R.

“…This article explores the surface architecture formation on layered A 3 B 6 semiconductors, such as In 4 Se 3 , InSe, and InTe, focusing on kinetics of surface…”
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Indium deposited nanosystems formation on 2D layered chalcogenide crystals' surfaces by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R., Tsvetkova, O. V.

“…The studies of In nanosystem formation on (100) surface of In 4 Se 3 were conducted applying analysis of STM data from 1 × 1µm 2 areas considering the…”
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Solid state dewetting application for in/(0001) Sb2Te3 nanosystem formation by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R., Tsvetkova, O. V.

“…Sb 2 Te 3 layered chalcogenide crystal's (0001) surface was applied for self-organizing of deposited indium nanostructures' arrays while solid state dewetting…”
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InTe surface application as template for indium deposited nanosystem formation by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R.

“…Formation of indium deposited coverage on (001) surface of InTe layered semiconductor crystal due to solid state dewetting process was studied by STM/STS in…”
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Quantitative analysis of indium deposited layer formation mechanism for In/In4Se3 (100) nanosystem by Galiy, P.V., Nenchuk, T.M., Mazur, P., Ciszewski, A., Yarovets, I.R.

“…Indium deposited coatings formation on (100) surface of In 4 Se 3 layered semiconductor crystal was studied by scanning tunneling spectroscopy/microscopy…”
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Surface investigations of nanostructured porous silicon by Galiy, P.V, Lesiv, T.I, Monastyrskii, L.S, Nenchuk, T.M, Olenych, I.B

“…Por-Si surface studies were carried out by Auger electron spectroscopy (AES), thermostimulated exoelectron emission (TSEE), photoluminescence (PL) in visible…”
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Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal by GALIY, P. V, NENCHUK, T. M, DVERIY, O. R, CISZEWSKI, A, MAZUR, P, ZUBER, S

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Thermostimulated Exoelectron Emission Studies of Porous Silicon by Galiy, P. V., Nenchuk, T. M., Stakhira, J. M.

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Studies of indium nanostructures growth models on A 3 B 6 layered templates by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R.

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Solid state dewetting application for in/(0001) Sb 2 Te 3 nanosystem formation by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R., Tsvetkova, O. V.

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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals by Galiy, P V, Musyanovych, A V, Nenchuk, T M

“…The results of the quantitative X--ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) of the interface carbon layer formation on the…”
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Electronic energy structure of the (100) In4Se3 surfaces at different preparation and treatment in ultraviolet photoelectron spectroscopy study by Tuziak, O.Ya, Makar, T.R., Dzyuba, V.I., Nenchuk, T.M., Galiy, P.V.

“…The (100) surface of In4Se3 layered crystal was obtained in situ, ions sputtered and exposed to UHV for hours. The UPS spectra for these surfaces, atomically…”
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Structural Aspect of Formation of a Nanosystem of In/In$_{4}$Se$_{3}$ (100) by Galiy, P. V., Mazur, P., Ciszewski, A., Nenchuk, T. M., Yarovets’, I. R., Dveriy, O. R.

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Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Buzhuk, Ya. M., Lubun, Z. M., Dveriy, O. R.

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Self-assembled indium nanostructures formation on InSe (0001) surface by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Buzhuk, Ya. M., Tsvetkova, O. V.

“…The surfaces of 2D layered crystals are one among most perspective templates for self-assembling of metal nanostructures due to the dewetting. The initial InSe…”
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Solid state dewetting application for In/ (0001) Sb2Te3 2D layered semiconductor nanosystem formation by Galiy, P.V., Nenchuk, T.M., Ciszewski, A., Mazur, P., Dzyuba, V.I., Makar, T.R., Tsvetkova, O.V.

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Ni$_x$InSe (0001) Metal–Semiconductor Heteronanosystem Study by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Yarovets’, I. R., Dveriy, O. R.

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Auger electron spectroscopy studies of In4Se3 layered crystals by Galiy, P.V., Nenchuk, T.M., Stakhira, J.M., Fiyala, Ya.M.

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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In 4Se 3 crystals by Galiy, P.V., Musyanovych, A.V., Nenchuk, T.M.

“…The results of the quantitative X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) of the interface carbon layer formation on the…”
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Study of Self-assembled 2D Ag Nanostructures Intercalated into In4Se3 Layered Semiconductor Crystal by Galiy, P.V., Nenchuk, T.M., Dveriy, O.R., Ciszewski, A., Mazur, P., Poplavskyy, I.O.

“…The furrowed structure of the surface lattice in accord with bulk crystallography data for non intentionally intercalated In 4 Se 3 crystal is also find to be…”
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