Ion-beam formation and track modification of InAs nanoclusters in silicon and silica

Ion-beam formation and track modification of InAs nanoclusters in silicon and silica

The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a fluence of 3 × 10 14 cm –2 are studied. It is found that post-implantation annealing and irradiation with high-energy ions alter the size and shap...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics Vol. 80; no. 2; pp. 141 - 145
Main Authors: Komarov, F. F., Milchanin, O. V., Skuratov, V. A., Makhavikou, M. A., Janse van Vuuren, A., Neethling, J. N., Wendler, E., Vlasukova, L. A., Parkhomenko, I. N., Yuvchenko, V. N.
Format: Journal Article
Language:English
Published: New York Allerton Press 01-02-2016
Springer Nature B.V
Subjects:
Beamforming
Elongated structure
Fluence
Hadrons
Heavy Ions
Implantation
Indium arsenides
Ion beams
Irradiation
Nanoclusters
Nanostructure
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the 22nd International Conference “Ion-Surface Interaction (ISI-2015)”
Silicon dioxide
Thermal Spike Model
High Resolution Mode
Raman Scattering Spectrum
Molten Region
Raman Scattering Signal
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Summary:The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a fluence of 3 × 10 14 cm –2 are studied. It is found that post-implantation annealing and irradiation with high-energy ions alter the size and shape of nanoclusters and cause structural transformations within them. The ordering of nanoclusters and their elongation along the trajectory of Xe ions in a SiO 2 matrix is observed.
ISSN:1062-8738
1934-9432
DOI:10.3103/S106287381602012X