Search Results - "Neeraj, Kaushal Kumari"

A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors by Kaushal, Kumari Neeraj, Mohapatra, Nihar R.

“…In this paper, we have proposed a simple and zero-cost technique to improve ON-state and reliability performance of LDMOS transistors. We introduced doping…”
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A Physics-Based Compact Model to Capture Cryogenic Behavior of LDMOS Transistors by Kaushal, Kumari Neeraj, Mohapatra, Nihar R.

“…In this work, a detailed characterization of lateral DMOS transistors in the cryogenic regime is carried out. It is shown that carrier freeze-out in the drift…”
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Scalable Substrate Current Model for LDMOS Transistors Based on Internal Drain Voltage by Kaushal, Kumari Neeraj, Dan, Virender, Mohapatra, Nihar R.

“…In this work, a scalable robust substrate current model for laterally diffused MOS (LDMOS) transistors is presented. The model is created in two stages. First,…”
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Unified Theory of the Capacitance Behavior in LDMOS Devices by Kaushal, Kumari Neeraj, Mohapatra, Nihar R.

“…This article reviews and provides physical insights into the anomalous capacitance behavior of laterally diffused MOS (LDMOS) transistors. It is shown that the…”
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Compact Modeling of LDMOS Transistors Over a Wide Temperature Range Including Cryogenics by Machhiwar, Yogendra, Gill, Garima, Kaushal, Kumari Neeraj, Mohapatra, Nihar R., Agarwal, Harshit

“…An improved compact model of high-voltage laterally diffused MOS (LDMOS) transistors valid over a wide temperature range including cryogenic is presented. The…”
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Source Underlap-A Novel Technique to Improve Safe Operating Area and Output-Conductance in LDMOS Transistors by Bhoir, Mandar S., Kaushal, Kumari Neeraj, Panda, Soumya R., Singh, Amit K., Jatana, H. S., Mohapatra, Nihar R.

“…In this article, we have proposed a simple, novel, and cost-effective technique to mitigate the ON-state performance issues in laterally diffused MOS (LDMOS)…”
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Behavior of LDMOS transistors at cryogenic temperature - An experiment based analysis by Neeraj, Kaushal Kumari, Ranjan, Mohapatra Nihar

“…In this work, LDMOS transistors with different drift length and drift doping are characterized at cryogenic temperature. The physics behind the LDMOS…”
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Physics-based parameter extraction methodology for channel doping gradient (CDG) LDMOS transistors based on HiSIM-HV2 model by Patil, Shubham, Kaushal, Kumari Neeraj, Bhoir, Mandar S., Mohapatra, Nihar R.

“…A physics-based parameter extraction methodology based on HiSIM-HV2 model is developed to capture the effect of CDG on the performance of LDMOS transistors…”
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