Search Results - "Nedev, N."

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    Synthesis of high purity nickel oxide by a modified sol-gel method by Mateos, D., Valdez, B., Castillo, J.R., Nedev, N., Curiel, M., Perez, O., Arias, A., Tiznado, H.

    Published in Ceramics international (15-06-2019)
    “…Nickel oxide (NiO) powder was synthesized by a modified sol-gel method using nickel acetate, citric acid and ethylene glycol as precursors. The synthesized…”
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    Journal Article
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    Mouth opening and trismus in patients undergoing curative treatment for head and neck cancer by Steiner, F, Evans, J, Marsh, R, Rigby, P, James, S, Sutherland, K, Wickens, R, Nedev, N, Kelly, B, Tan, S.T

    “…Abstract This study documents mouth opening and the incidence of and factors contributing to trismus (<35 mm mouth opening), as well as the associated impact…”
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    β-Ga2O3 nanostructures for photocatalytic degradation of red amaranth toxic dye by Castillo-Saenz, J R, Domínguez, D, Arias, A, Arce, L A, Farías, M H, Pérez-Landeros, O M, Valdez, B, Nedev, N, López - Medina, J.

    Published in Nano express (01-06-2024)
    “…Beta gallium oxide (β-Ga2O3) microstructures composed of ∼50 nm nanoparticles were synthesized by the hydrothermal method. Using the Tauc plot method a value…”
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    Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature by Paz, J., Nedev, N., Nesheva, D., Curiel, M., Manolov, E., Valdez, B., Perez, O., Mateos, D., Nedev, R., Arias, A., Ramirez, M., Dzhurkov, V.

    “…SiO x layers with x  = 1.15 and 1.3 and thicknesses of 50 and 100 nm were deposited on crystalline silicon wafers by thermal evaporation in vacuum. Part of the…”
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    Thin SiO2/a-Si:H/SiO2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories by Mateos, D., Diniz, J.A., Nedev, N., Munoz, S.N.M., Curiel, M., Mederos, M., Valdez, B., Montero, G.

    Published in Thin solid films (30-04-2017)
    “…In this work we present electrical and morphological characterization of thin multilayer structures, SiO2/a-Si:H/SiO2, with possible applications in…”
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    Structural and electrical characterization of multilayer Al2O3/ZnO nanolaminates grown by atomic layer deposition by Martínez-Castelo, J.R., López, J., Domínguez, D., Murillo, E., Machorro, R., Borbón-Nuñez, H.A., Fernandez-Alvarez, I., Arias, A., Curiel, M., Nedev, N., Farías, M.H., Tiznado, H.

    “…Nanolaminates formed by several bilayers of Al2O3 and ZnO (AZA), grown by atomic layer deposition from Trimethyl aluminum, Diethyl zinc and water as…”
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    TEM and Spectroscopic Ellipsometry studies of multilayer gate dielectrics containing crystalline and amorphous Si nanoclusters by Mateos, D., Curiel, M.A., Nedev, N., Nesheva, D., Machorro, R., Manolov, E., Abundiz, N., Arias, A., Contreras, O., Valdez, B., Raymond, O., Siqueiros, J.M.

    “…Gate dielectrics containing crystalline or amorphous silicon nanoclusters are fabricated by thermal oxidation, followed by deposition of SiOx films (x=1.15)…”
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    Journal Article Conference Proceeding
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    Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application by Pereira, L, Marques, A, Águas, H, Nedev, N, Georgiev, S, Fortunato, E, Martins, R

    “…The search for new dielectric materials to be used in metal–insulator–semiconductor (MIS) structures to replace the silicon oxide (SiO2) has been growing up…”
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    HER2-mediated internalization of a targeted prodrug cytotoxic conjugate is dependent on the valency of the targeting ligand by Guillemard, Veronique, Nedev, Hinyu N, Berezov, Alan, Murali, Ramachandran, Saragovi, H Uri

    Published in DNA and cell biology (01-06-2005)
    “…HER2 is a validated therapeutic target for cancer. There are no natural ligands, but monoclonal antibodies and peptides that bind HER2 act as artificial…”
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    Microstructural characterization of thin SiO x films obtained by physical vapor deposition by Curiel, M.A., Nedev, N., Nesheva, D., Soares, J., Haasch, R., Sardela, M., Valdez, B., Sankaran, B., Manolov, E., Bineva, I., Petrov, I.

    “…X-ray diffraction and reflectivity, X-ray photoelectron spectroscopy and spectroscopic ellipsometry were applied to study the initial composition, thickness,…”
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    Effect of oxygen to argon ratio on the properties of thin SiOx films deposited by r.f. sputtering by Terrazas, J. M., Nedev, N., Manolov, E., Valdez, B., Nesheva, D., Curiel, M. A., Haasch, R., Petrov, I.

    “…Energy Dispersive X-ray and X-ray Photoelectron (XPS) spectroscopies show that SiO x films deposited by reactive r.f. magnetron sputtering at partial pressure…”
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    IR and Raman absorption spectroscopic studies of APCVD, LPCVD and PECVD thin SiN films by Beshkov, G, Lei, Shi, Lazarova, V, Nedev, N, Georgiev, S.S

    Published in Vacuum (24-12-2002)
    “…Silicon nitride films prepared by different chemical vapour deposition (CVD) techniques are studied by infrared (IR) and Raman spectroscopy. The main peak in…”
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    Journal Article Conference Proceeding
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    Characterization of silicon carbide thin films prepared by VHF-PECVD technology by Zhang, S., Raniero, L., Fortunato, E., Pereira, L., Martins, N., Canhola, P., Ferreira, I., Nedev, N., Águas, H., Martins, R.

    Published in Journal of non-crystalline solids (15-06-2004)
    “…A series of hydrogenated amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of silane,…”
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    Synthesis and evaluation of novel dipeptidyl benzoyloxymethyl ketones as caspase inhibitors by Nedev, Hinyu N., Klaiman, Guy, LeBlanc, Andrea, Saragovi, H. Uri

    “…We describe novel peptide-based caspase inhibitors. Potent and comparatively selective compounds containing a dipeptide scaffold and a substituted oxymethyl…”
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    Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticles by Nedev, N, Nesheva, D, Manolov, E, Bruggemann, R, Meier, S, Kirilovc, K, Levi, Z

    “…Silicon nanocrystals embedded in a SiO2 matrix are fabricated by thermal annealing of Metal/SiO2/SiOx/c-Si structures (x=1.15) at 1000 deg C in N2 atmosphere…”
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