Search Results - "Naumann, Franziska"

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  1. 1

    Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films by Haeberle, Jörg, Henkel, Karsten, Gargouri, Hassan, Naumann, Franziska, Gruska, Bernd, Arens, Michael, Tallarida, Massimo, Schmeißer, Dieter

    Published in Beilstein journal of nanotechnology (08-11-2013)
    “…We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and…”
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    Journal Article
  2. 2

    Metacognitive Therapy for Adjustment Disorder in a Patient With Newly Diagnosed Pulmonary Arterial Hypertension: A Case Report by Winter, Lotta, Naumann, Franziska, Olsson, Karen, Fuge, Jan, Hoeper, Marius M, Kahl, Kai G

    Published in Frontiers in psychology (12-02-2020)
    “…Adjustment disorders (ADs) belong to the worldwide most diagnosed mental disorders and are particularly frequent in patients with an underlying physical…”
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    Journal Article
  3. 3

    Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition by Kot, Małgorzata, Henkel, Karsten, Das, Chittaranjan, Brizzi, Simone, Kärkkänen, Irina, Schneidewind, Jessica, Naumann, Franziska, Gargouri, Hassan, Schmeißer, Dieter

    Published in Surface & coatings technology (15-09-2017)
    “…A comparative study of thin titanium oxynitride (TiOxNy) films prepared by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium…”
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  4. 4

    Analysis of nitrogen species in titanium oxynitride ALD films by Sowińska, Małgorzata, Brizzi, Simone, Das, Chittaranjan, Kärkkänen, Irina, Schneidewind, Jessica, Naumann, Franziska, Gargouri, Hassan, Henkel, Karsten, Schmeißer, Dieter

    Published in Applied surface science (01-09-2016)
    “…Titanium oxynitride films are prepared by plasma enhanced atomic layer deposition method using two different precursors and nitrogen sources. Synchrotron…”
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    Journal Article
  5. 5
  6. 6

    Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition by Mahmoodinezhad, Ali, Janowitz, Christoph, Naumann, Franziska, Plate, Paul, Gargouri, Hassan, Henkel, Karsten, Schmeißer, Dieter, Flege, Jan Ingo

    “…Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) applying a capacitively coupled plasma source where…”
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  7. 7

    AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxial growth of AlN on sapphire by Hagedorn, Sylvia, Knauer, Arne, Weyers, Markus, Naumann, Franziska, Gargouri, Hassan

    “…The annealing of amorphous AlN and AlN/Al2O3 seed layers from atomic layer deposition (ALD) on sapphire substrates and their application as starting layers for…”
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  8. 8
  9. 9

    Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study by Kot, Małgorzata, Łobaza, Justyna, Naumann, Franziska, Gargouri, Hassan, Henkel, Karsten, Schmeißer, Dieter

    “…The surface oxidation of a titanium oxynitride (TiOxNy) film after long-time storage of 25 month in ambient conditions is investigated. The TiOxNy film is…”
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  10. 10

    In-gap states in titanium dioxide and oxynitride atomic layer deposited films by Henkel, Karsten, Das, Chittaranjan, Kot, Małgorzata, Schmeißer, Dieter, Naumann, Franziska, Kärkkänen, Irina, Gargouri, Hassan

    “…Valence band (VB) spectra of titanium dioxide (TiO2) and oxynitride (TiOxNy) films prepared by different atomic layer deposition (ALD) processes are compared…”
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    Journal Article
  11. 11
  12. 12

    Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources by Kot, Małgorzata, Henkel, Karsten, Naumann, Franziska, Gargouri, Hassan, Lupina, Lidia, Wilker, Viola, Kus, Peter, Poz´arowska, Emilia, Garain, Samiran, Rouissi, Zied, Schmeißer, Dieter

    “…A comparative study of thin aluminum nitride (AlN) films deposited by plasma-enhanced atomic layer deposition in the SENTECH SI ALD LL system applying either a…”
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  13. 13

    GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates by Treidel, Eldad Bahat, Hilt, Oliver, Stöver, Julian, Hoffmann, Veit, Brunner, Frank, Ickert, Karina, Hochheim, Stefan, Naumann, Franziska, Gargouri, Hassan, Martinez, Bryan, Weyers, Markus, Würfl, Joachim

    “…In this work, a vertical n‐channel MISFET homoepitaxially grown on ammonothermal n‐type GaN substrates by MOVPE is demonstrated. The MIS gate module consists…”
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  14. 14

    Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al 2 O 3 -films by Haeberle, Jörg, Henkel, Karsten, Gargouri, Hassan, Naumann, Franziska, Gruska, Bernd, Arens, Michael, Tallarida, Massimo, Schmeißer, Dieter

    Published in Beilstein journal of nanotechnology (08-11-2013)
    “…We report on results on the preparation of thin (<100 nm) aluminum oxide (Al 2 O 3 ) films on silicon substrates using thermal atomic layer deposition (T-ALD)…”
    Get full text
    Journal Article
  15. 15