Search Results - "Naumann, Franziska"
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Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
Published in Beilstein journal of nanotechnology (08-11-2013)“…We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and…”
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Metacognitive Therapy for Adjustment Disorder in a Patient With Newly Diagnosed Pulmonary Arterial Hypertension: A Case Report
Published in Frontiers in psychology (12-02-2020)“…Adjustment disorders (ADs) belong to the worldwide most diagnosed mental disorders and are particularly frequent in patients with an underlying physical…”
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Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
Published in Surface & coatings technology (15-09-2017)“…A comparative study of thin titanium oxynitride (TiOxNy) films prepared by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium…”
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Analysis of nitrogen species in titanium oxynitride ALD films
Published in Applied surface science (01-09-2016)“…Titanium oxynitride films are prepared by plasma enhanced atomic layer deposition method using two different precursors and nitrogen sources. Synchrotron…”
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Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2016)“…The process parameters' impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride…”
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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-2020)“…Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) applying a capacitively coupled plasma source where…”
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AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxial growth of AlN on sapphire
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-2019)“…The annealing of amorphous AlN and AlN/Al2O3 seed layers from atomic layer deposition (ALD) on sapphire substrates and their application as starting layers for…”
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Low-temperature atomic layer deposition of indium oxide thin films using trimethylindium and oxygen plasma
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-12-2021)“…Indium oxide (InxOy) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium and oxygen plasma in a low-temperature…”
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Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2018)“…The surface oxidation of a titanium oxynitride (TiOxNy) film after long-time storage of 25 month in ambient conditions is investigated. The TiOxNy film is…”
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In-gap states in titanium dioxide and oxynitride atomic layer deposited films
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2017)“…Valence band (VB) spectra of titanium dioxide (TiO2) and oxynitride (TiOxNy) films prepared by different atomic layer deposition (ALD) processes are compared…”
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Bottom-Up Design of a Supercycle Recipe for Atomic Layer Deposition of Tunable Indium Gallium Zinc Oxide Thin Films
Published in ACS applied electronic materials (27-07-2024)Get full text
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Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-2019)“…A comparative study of thin aluminum nitride (AlN) films deposited by plasma-enhanced atomic layer deposition in the SENTECH SI ALD LL system applying either a…”
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13
GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates
Published in Physica status solidi. A, Applications and materials science (21-04-2018)“…In this work, a vertical n‐channel MISFET homoepitaxially grown on ammonothermal n‐type GaN substrates by MOVPE is demonstrated. The MIS gate module consists…”
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14
Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al 2 O 3 -films
Published in Beilstein journal of nanotechnology (08-11-2013)“…We report on results on the preparation of thin (<100 nm) aluminum oxide (Al 2 O 3 ) films on silicon substrates using thermal atomic layer deposition (T-ALD)…”
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