Search Results - "Nattermann, L."

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser by Ludewig, P., Knaub, N., Hossain, N., Reinhard, S., Nattermann, L., Marko, I. P., Jin, S. R., Hild, K., Chatterjee, S., Stolz, W., Sweeney, S. J., Volz, K.

“…The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and…”
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Growth of Ga(AsBi) on GaAs by continuous flow MOVPE by Ludewig, P., Bushell, Z.L., Nattermann, L., Knaub, N., Stolz, W., Volz, K.

“…In this paper we discuss the epitaxial growth of Ga(AsBi) on GaAs under continuous precursor gas supply by metal organic vapor phase epitaxy (MOVPE). Due to…”
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Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE by Nattermann, L., Ludewig, P., Sterzer, E., Volz, K.

“…•MOVPE growth of two quaternary containing III/V semiconductors.•Influence of strain for the growth of quaternary III/V bismides.•Increased Bi incorporation in…”
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Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Conditions Investigated by Atomic Resolution In Situ (S)TEM by Straubinger, R., Widemann, M., Belz, J., Nattermann, L., Beyer, A., Volz, K.

“…We report the formation of Bi clusters in Ga(P 1-x ,Bi x ) layers during an in situ (scanning) transmission electron microscopy ((S)TEM) annealing…”
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MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8 by Nattermann, L., Beyer, A., Ludewig, P., Hepp, T., Sterzer, E., Volz, K.

“…•First experimental results on novel material system Ga(PBi) on GaP.•Possible candidate for laser applications on Si.•High quality MOVPE growth of…”
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(GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA) by Sterzer, E., Ringler, B., Nattermann, L., Beyer, A., von Hänisch, C., Stolz, W., Volz, K.

“…III/V semiconductors containing small amounts of Nitrogen (N) are very interesting for a variety of optoelectronic applications. Unfortunately, the…”
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An experimental approach for real time mass spectrometric CVD gas phase investigations by Nattermann, L., Maßmeyer, O., Sterzer, E., Derpmann, V., Chung, H. Y., Stolz, W., Volz, K.

“…This is a report on the first setup of a recently developed, extremely sensitive and very fast 3D quadrupole ion trap mass spectrometer inline in a…”
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MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors by Nattermann, L., Ludewig, P., Meckbach, L., Ringler, B., Keiper, D., von Hänisch, C., Stolz, W., Volz, K.

“…In this paper different metalorganic Bismuth- and Gallium-precursors such as Triisopropylbismuth, Tritertiarybutylbismuth, Trimethylbismuth, Triethylgallium…”
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Efficient nitrogen incorporation in GaAs using novel metal organic As–N precursor di-tertiary-butyl-arsano-amine (DTBAA) by Sterzer, E., Beyer, A., Duschek, L., Nattermann, L., Ringler, B., Leube, B., Stegmüller, A., Tonner, R., von Hänisch, C., Stolz, W., Volz, K.

“…III/V semiconductors containing small amounts of nitrogen (N; dilute nitrides) are discussed in the context of different solar cell and laser applications. The…”
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1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA) by Sterzer, E., Maßmeyer, O., Nattermann, L., Jandieri, K., Gupta, S., Beyer, A., Ringler, B., von Hänisch, C., Stolz, W., Volz, K.

“…N containing lattice matched 1 eV materials, such as Ga(NAsSb) and (GaIn)(NAs), are discussed as potential solar subcells in a four junction solar cell…”
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Novel nitrogen/gallium precursor [Ga(bdma)H2] for MOVPE by Sterzer, E., Beyer, A., Nattermann, L., Schorn, W., Schlechter, K., Pulz, S., Sundermeyer, J., Stolz, W., Volz, K.

“…Dilute nitrogen (N) containing III/V semiconductors are promising candidates for solar cell and laser applications. The N incorporation efficiency of…”
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Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE by Maßmeyer, O., Sterzer, E., Nattermann, L., Stolz, W., Volz, K.

“…[Display omitted] •In situ characterization of dilute nitrides during growth by MOVPE.•Dilute nitrides exhibit a more Ga or N rich (2 × 6)/(6 × 6) surface…”
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MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications by Nattermann, L., Ludewig, P., Knaub, N., Rosemann, N.W., Hepp, T., Sterzer, E., Jin, S.R., Hild, K., Chatterjee, S., Sweeney, S.J., Stolz, W., Volz, K.

“…[Display omitted] •Calculation of band gap and spin-orbit split-off energies of Ga(PAsBi) for different compositions.•Temperature-dependent PL and comparison…”
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