Search Results - "Natsuaki, Nobuyoshi"

Advantages of fluorine introduction in boron implanted shallow p+/n-junction formation by OHYU, K, ITOGA, T, NATSUAKI, N

“…The advantages of fluorine introduction on fabrication of shallow p + /n-junctions have been demonstrated. This was done by implanting fluorine onto the boron…”
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Observation of pn junctions on implanted silicon using a scanning tunneling microscope by HOSAKA, S, HOSOKI, S, TAKATA, K, HORIUCHI, K, NATSUAKI, N

“…Si pn junctions fabricated by photoresist masked As(+) implantation were observed using current imaging tunneling spectroscopy (CITS) in a scanning tunneling…”
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Dislocation-free formation of artificial cavities in Si single crystal by YOSHIHIRO, N, NATSUAKI, N

“…Cavities enclosed in silicon single crystals are formed by utilizing epitaxial growth on surfaces with microstructures consisting of parallel walls. The…”
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Secondary defects in 2 MeV phosphorus implanted silicon by TAMURA, M, NATSUAKI, N

“…Annealing behavior of secondary defects in 2 MeV phosphorus ion implanted (100) silicon has been investigated through cross-sectional and plan-view TEM…”
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Amorphization processes in ion implanted Si : temperature dependence by MOTOOKA, T, KOBAYASHI, F, FONS, P, TOKUYAMA, T, SUZUKI, T, NATSUAKI, N

“…Temperature dependence of amorphization processes in ion-implanted Si has been investigated using Raman spectroscopy together with cross-sectional transmission…”
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Characteristics of bipolar transistors with various depths of n+ buried layers formed by high-energy ion implantation by TAMBA, A, KOBAYASHI, Y, SUZUKI, T, NATSUAKI, N

“…Bipolar transistors having n + buried layers of various depths formed by high-energy ion implantation are investigated in order to obtain bipolar transistor of…”
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Improvement of SiO2/Si interface properties utilising fluorine ion implantation and drive-in diffusion by OHYU, K, ITOGA, T, NISHIOKA, Y, NATSUAKI, N

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Epitaxial transformation of ion-implanted polycrystalline Si films on (100) Si substrates by rapid thermal annealing by TAMURA, M, NATSUAKI, N, AOKI, S

“…The epitaxial realignment of CVD deposited and As + ion-implanted poly-Si layers on (100) Si substrates has been investigated by both plan-view and…”
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Planar Dechannelling of Energetic Ions at Dislocations. III. Dechannelling at Edge Dislocations in Si by Kimura, Kenji, Mannami, Michihiko, Natsuaki, Nobuyoshi

“…The planar dechannelling cross-sections of MeV ions at dislocations were calculated and the results were summarized in graphs, from which the dechannelling…”
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Effects of Dislocation on Planar Channelling of Energetic H + and He + Ions by Mannami, Michi-hiko, Kimura, Kenji, Kyoshima, Akira, Matsushita, Mitsuyoshi, Natsuaki, Nobuyoshi

“…Planar channelling of MeV H+ and He+ ions was studied using phosphorus implanted silicon crystals with a well-defined network of edge dislocations. The energy…”
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Single Pulse Laser Annealing of a Double-Implanted Layer by Ohkura, Makoto, Natsuaki, Nobuyoshi, Tamura, Masao, Tokuyama, Takashi

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Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon by Miyao, Masanobu, Natsuaki, Nobuyoshi, Yoshihiro, Naotsugu, Tamura, Masao, Tokuyama, Takashi

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ULSI-process demands of contamination control on ion implantation by Natsuaki, Nobuyoshi, Kamata, Tadashi, Kondo, Kaori, Kureishi, Yoshinori

“…High-yield processing based on contamination control is one of the key factors counteracting the explosive cost-increase in the ULSI manufacture. By…”
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Observation of p n junctions on implanted silicon using a scanning tunneling microscope by Hosaka, Sumio, Hosoki, Shigeyuki, Takata, Keiji, Horiuchi, Katsutada, Natsuaki, Nobuyoshi

“…Si pn junctions fabricated by photoresist masked As+ implantation were observed using current imaging tunneling spectroscopy (CITS) in a scanning tunneling…”
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Origin of ion beam mixing effects on morphological features in solid-phase titanium silicide formation by Suzuki, Tadashi, Miyazaki, Takao, Natsuaki, Nobuyoshi

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Improvement of SiO 2 /Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion by Ohyu, Kiyonori, Itoga, Toshihiko, Nishioka, Yasushiro, Natsuaki, Nobuyoshi

“…Thermal drive-in diffusion of ion-implanted F atoms has been employed to fluorinate SiO 2 /Si interfaces and thereby improve their electrical properties. The…”
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Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO 2 Film by Natsuaki, Nobuyoshi, Tamura, Masao, Tokuyama, Takashi

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Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted Samples by Natsuaki, Nobuyoshi, Tamura, Masao, Miyao, Masanobu, Tokuyama, Takashi

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Rapid Thermal Annealing Process for Titanium-Silicide Contact Formation by Natsuaki, Nobuyoshi, Chyu, Kiyonori, Suzuki, Tadashi, Kobayashi, Nobuyoshi, Hashimoto, Naotaka, Wada, Yasuo

“…Self-aligned refractory-metal-silicide contact has been recognized as one of the keys to realizing the performance capabilities inherent in scaled-down VLSI's…”
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